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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW087105424ApriorityCriticalpatent/TW364191B/en
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Publication of TW364191BpublicationCriticalpatent/TW364191B/en
A method of producing DRAM capacitor is disclosed. It comprises the steps of first forming in sequence a dielectric layer, a first conductive layer and an insulating layer on a substrate, then, forming an opening pattern in the insulating layer above the source/drain electrode. Sequently, forming a second conductive layer on the substrate, and back etching the second conductive layer and the first conductive layer to form spacer. Then, removing the insulating layer and part of the dielectric layer using the spacer and the first conductive layer as etching mask to form an opening, exposing the source/drain electrode. Then, forming a third conductive layer on the substrate, then redefining the third and the first conductive layers, forming the lower electrode of the capacitor with the defined third and the first conductive layers and the spacer.
TW087105424A1998-04-101998-04-10Method of producing DRAM capacitor
TW364191B
(en)