TW375776B - Process for forming self-aligned twin well region having planar surface - Google Patents
Process for forming self-aligned twin well region having planar surfaceInfo
- Publication number
- TW375776B TW375776B TW086104188A TW86104188A TW375776B TW 375776 B TW375776 B TW 375776B TW 086104188 A TW086104188 A TW 086104188A TW 86104188 A TW86104188 A TW 86104188A TW 375776 B TW375776 B TW 375776B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion
- substrate
- well region
- forming
- region
- Prior art date
Links
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- Element Separation (AREA)
Abstract
A process for forming self-aligned twin well region having planar surface, comprising at least forming pad oxide on substrate and forming photoresist layer thereon to define a first well region; subsequently, implanting a first ion having a first conduction pattern inside the substrate using photoresist layer as mask, and then implanting a second ion having first conduction pattern inside the substrate using again photoresist layer as mask; forming a silicon oxide layer on the portion of pad oxide layer not covered by photoresist layer by liquid deposition; after removing photoresist layer, driving the first ion and second ion into the substrate to form a first well region; using silicon oxide layer as mask, implanting a third ion having a second conduction pattern inside the substrate, and driving in the third ion inside the substrate to form a second well region; then forming a silicon nitride region on pad oxide layer to define an active element region, and oxidizing by high temperature the portion of pad oxide not covered by silicon oxide region to form a field oxide region; and finally, implanting a fourth ion having a second conduction pattern into the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086104188A TW375776B (en) | 1997-04-01 | 1997-04-01 | Process for forming self-aligned twin well region having planar surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086104188A TW375776B (en) | 1997-04-01 | 1997-04-01 | Process for forming self-aligned twin well region having planar surface |
Publications (1)
Publication Number | Publication Date |
---|---|
TW375776B true TW375776B (en) | 1999-12-01 |
Family
ID=57941928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086104188A TW375776B (en) | 1997-04-01 | 1997-04-01 | Process for forming self-aligned twin well region having planar surface |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW375776B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI603433B (en) * | 2015-09-08 | 2017-10-21 | 鴻海精密工業股份有限公司 | Complementary metal oxide semiconductor device and method making same |
-
1997
- 1997-04-01 TW TW086104188A patent/TW375776B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI603433B (en) * | 2015-09-08 | 2017-10-21 | 鴻海精密工業股份有限公司 | Complementary metal oxide semiconductor device and method making same |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |