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A process for trench chemical mechanical planarization, which comprises the following steps: depositing a pad oxide on a silicon substrate; forming a nitride layer on the pad oxide; defining a plurality of dummy trenches on the nitride layer and the pad oxide by applying a photoresist on a mask on a region predetermined to form wide trenches thereon; depositing an oxide layer over the entire silicon substrate; and carrying out a chemical mechanical planarization procedure.
TW086110699A1997-07-281997-07-28Process for trench chemical mechanical planarization
TW343359B
(en)