TW346663B - Process for forming an oxidation isolation region in a substrate - Google Patents
Process for forming an oxidation isolation region in a substrateInfo
- Publication number
- TW346663B TW346663B TW086105831A TW86105831A TW346663B TW 346663 B TW346663 B TW 346663B TW 086105831 A TW086105831 A TW 086105831A TW 86105831 A TW86105831 A TW 86105831A TW 346663 B TW346663 B TW 346663B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- substrate
- layer
- isolation region
- dielectric layer
- Prior art date
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Element Separation (AREA)
Abstract
A process for forming an oxidation isolation region in a semiconductor substrate, which at least comprises: forming a silicon oxide layer on the substrate; forming a dielectric layer on the silicon oxide layer, the dielectric layer being used as an anti-oxidation barrier layer; forming a silicon nitride layer on the dielectric layer; removing a portion of the silicon nitride layer and the dielectric layer thereby forming a pattern in the silicon nitride layer and the dielectric layer; and using the silicon nitride layer and the dielectric layer as an anti-oxidation mask, and forming the oxidation isolation region in the substrate by using a thermal oxidation method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086105831A TW346663B (en) | 1997-05-01 | 1997-05-01 | Process for forming an oxidation isolation region in a substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086105831A TW346663B (en) | 1997-05-01 | 1997-05-01 | Process for forming an oxidation isolation region in a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
TW346663B true TW346663B (en) | 1998-12-01 |
Family
ID=58263922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086105831A TW346663B (en) | 1997-05-01 | 1997-05-01 | Process for forming an oxidation isolation region in a substrate |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW346663B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI700778B (en) * | 2019-06-19 | 2020-08-01 | 台灣茂矽電子股份有限公司 | Edge handling method of semiconductor substrate |
-
1997
- 1997-05-01 TW TW086105831A patent/TW346663B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI700778B (en) * | 2019-06-19 | 2020-08-01 | 台灣茂矽電子股份有限公司 | Edge handling method of semiconductor substrate |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |