TW346663B - Process for forming an oxidation isolation region in a substrate - Google Patents

Process for forming an oxidation isolation region in a substrate

Info

Publication number
TW346663B
TW346663B TW086105831A TW86105831A TW346663B TW 346663 B TW346663 B TW 346663B TW 086105831 A TW086105831 A TW 086105831A TW 86105831 A TW86105831 A TW 86105831A TW 346663 B TW346663 B TW 346663B
Authority
TW
Taiwan
Prior art keywords
forming
substrate
layer
isolation region
dielectric layer
Prior art date
Application number
TW086105831A
Other languages
Chinese (zh)
Inventor
Yun-Horng Shen
Woei-Ren Liou
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW086105831A priority Critical patent/TW346663B/en
Application granted granted Critical
Publication of TW346663B publication Critical patent/TW346663B/en

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  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)

Abstract

A process for forming an oxidation isolation region in a semiconductor substrate, which at least comprises: forming a silicon oxide layer on the substrate; forming a dielectric layer on the silicon oxide layer, the dielectric layer being used as an anti-oxidation barrier layer; forming a silicon nitride layer on the dielectric layer; removing a portion of the silicon nitride layer and the dielectric layer thereby forming a pattern in the silicon nitride layer and the dielectric layer; and using the silicon nitride layer and the dielectric layer as an anti-oxidation mask, and forming the oxidation isolation region in the substrate by using a thermal oxidation method.
TW086105831A 1997-05-01 1997-05-01 Process for forming an oxidation isolation region in a substrate TW346663B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086105831A TW346663B (en) 1997-05-01 1997-05-01 Process for forming an oxidation isolation region in a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086105831A TW346663B (en) 1997-05-01 1997-05-01 Process for forming an oxidation isolation region in a substrate

Publications (1)

Publication Number Publication Date
TW346663B true TW346663B (en) 1998-12-01

Family

ID=58263922

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086105831A TW346663B (en) 1997-05-01 1997-05-01 Process for forming an oxidation isolation region in a substrate

Country Status (1)

Country Link
TW (1) TW346663B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700778B (en) * 2019-06-19 2020-08-01 台灣茂矽電子股份有限公司 Edge handling method of semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI700778B (en) * 2019-06-19 2020-08-01 台灣茂矽電子股份有限公司 Edge handling method of semiconductor substrate

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