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Priority to TW086105686ApriorityCriticalpatent/TW336344B/en
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Publication of TW336344BpublicationCriticalpatent/TW336344B/en
A process for forming trench isolation in a semiconductor wafer, which at least comprises: forming a trench in the wafer; forming a nitrogenous silicide layer on the wafer and depositing it along the surface of the trench; providing a predetermined amount of silicon in the trench; applying a heat treatment to convert the predetermined amount of silicon into a silicon oxide layer as the insulation material of the trench isolation; and removing the nitrogenous silicide layer formed on the wafer.
TW086105686A1997-04-291997-04-29Trench isolation area and process for forming the same
TW336344B
(en)
A method for isolating an active region of an MOS semiconductor device using a planarized refill layer which is not substantially overpolished and an MOS device fabricated thereby