TW291580B - Manufacturing process of shallow isolation trench - Google Patents
Manufacturing process of shallow isolation trenchInfo
- Publication number
- TW291580B TW291580B TW85104782A TW85104782A TW291580B TW 291580 B TW291580 B TW 291580B TW 85104782 A TW85104782 A TW 85104782A TW 85104782 A TW85104782 A TW 85104782A TW 291580 B TW291580 B TW 291580B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- silicon nitride
- forming
- manufacturing process
- isolation trench
- Prior art date
Links
Landscapes
- Element Separation (AREA)
Abstract
A manufacturing process of shallow isolation trench includes the following steps: 1) forming one layer of oxide pad on the substrate; 2) forming one layer of silicon nitride on the oxide pad. 3) forming one sacrificed layer on the silicon nitride. 4) forming one musk layer defining the active region on the sacrificed layer. 5) removing the sacrificed layer, the silicon nitride, the oxide pad, and part of the substrate to form the shallow trench. 6) bottom cutting part of the silicon nitride. 7) form one dielectric layer to fill the shallow trench. 8) flatting the dielectric layer until the silicon nitride exposed. 9) removing the silicon nitride. removing the oxide pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW85104782A TW291580B (en) | 1996-04-22 | 1996-04-22 | Manufacturing process of shallow isolation trench |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW85104782A TW291580B (en) | 1996-04-22 | 1996-04-22 | Manufacturing process of shallow isolation trench |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW291580B true TW291580B (en) | 1996-11-21 |
Family
ID=51398329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW85104782A TW291580B (en) | 1996-04-22 | 1996-04-22 | Manufacturing process of shallow isolation trench |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW291580B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2333644A (en) * | 1998-01-26 | 1999-07-28 | Samsung Electronics Co Ltd | A method of forming void free trench isolation |
-
1996
- 1996-04-22 TW TW85104782A patent/TW291580B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2333644A (en) * | 1998-01-26 | 1999-07-28 | Samsung Electronics Co Ltd | A method of forming void free trench isolation |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |