TW344861B - Method of applying boron nitride film in shallow trench isolation planarization - Google Patents

Method of applying boron nitride film in shallow trench isolation planarization

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Publication number
TW344861B
TW344861B TW086104014A TW86104014A TW344861B TW 344861 B TW344861 B TW 344861B TW 086104014 A TW086104014 A TW 086104014A TW 86104014 A TW86104014 A TW 86104014A TW 344861 B TW344861 B TW 344861B
Authority
TW
Taiwan
Prior art keywords
boron nitride
nitride film
trench isolation
shallow trench
layer
Prior art date
Application number
TW086104014A
Other languages
Chinese (zh)
Inventor
Jyi-Jinn Luo
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW086104014A priority Critical patent/TW344861B/en
Application granted granted Critical
Publication of TW344861B publication Critical patent/TW344861B/en

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Abstract

A method of applying a boron nitride film in a shallow trench isolation (STI) planarization, which is applied in a semiconductor chemical mechanical polishing process, the method comprising: (a) providing a silicon substrate, and growing an oxide layer on the silicon substrate; (b) depositing a layer of boron nitride film on the oxide layer; (c) using a dry etching technique to etch off a particular region of the boron nitride film and the oxide layer to the silicon substrate thereby forming a trench; (d) depositing a layer of tetra-ethyl-ortho-silicate oxide film; and (e) polishing the tetra-ethyl-ortho-silicate oxide film to the boron nitride film by using a chemical mechanical polishing method.
TW086104014A 1997-03-28 1997-03-28 Method of applying boron nitride film in shallow trench isolation planarization TW344861B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086104014A TW344861B (en) 1997-03-28 1997-03-28 Method of applying boron nitride film in shallow trench isolation planarization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086104014A TW344861B (en) 1997-03-28 1997-03-28 Method of applying boron nitride film in shallow trench isolation planarization

Publications (1)

Publication Number Publication Date
TW344861B true TW344861B (en) 1998-11-11

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ID=58263776

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086104014A TW344861B (en) 1997-03-28 1997-03-28 Method of applying boron nitride film in shallow trench isolation planarization

Country Status (1)

Country Link
TW (1) TW344861B (en)

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