TW347575B - Method for forming shallow trench isolation region by selective wet etching - Google Patents

Method for forming shallow trench isolation region by selective wet etching

Info

Publication number
TW347575B
TW347575B TW086109200A TW86109200A TW347575B TW 347575 B TW347575 B TW 347575B TW 086109200 A TW086109200 A TW 086109200A TW 86109200 A TW86109200 A TW 86109200A TW 347575 B TW347575 B TW 347575B
Authority
TW
Taiwan
Prior art keywords
layer
forming
silicon
ozone
teos
Prior art date
Application number
TW086109200A
Other languages
Chinese (zh)
Inventor
Chen-Hua Yu
Syun-Ming Jang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW086109200A priority Critical patent/TW347575B/en
Application granted granted Critical
Publication of TW347575B publication Critical patent/TW347575B/en

Links

Abstract

A method for forming a shallow trench isolation on a silicon wafer, the method comprising the steps of: forming a pad oxide layer on the wafer; forming a silicon nitride layer on the pad layer; forming a silicon-containing glass on the silicon nitride layer; forming a trench in the silicon-containing glass, the silicon nitride layer, the pad layer, and the wafer; forming an ozone-TEOS layer on the silicon-containing glass layer and filling back to the trench, in which the deposition rate of the ozone-TEOS layer on the trench is slower than the deposition rate of the ozone-TEOS layer on the silicon-containing glass layer; and applying a selective etching process to etch the ozone-TEOS to complete the etching process and leaving the residual ozone-TEOS on the trench.
TW086109200A 1997-06-30 1997-06-30 Method for forming shallow trench isolation region by selective wet etching TW347575B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086109200A TW347575B (en) 1997-06-30 1997-06-30 Method for forming shallow trench isolation region by selective wet etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086109200A TW347575B (en) 1997-06-30 1997-06-30 Method for forming shallow trench isolation region by selective wet etching

Publications (1)

Publication Number Publication Date
TW347575B true TW347575B (en) 1998-12-11

Family

ID=58263988

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109200A TW347575B (en) 1997-06-30 1997-06-30 Method for forming shallow trench isolation region by selective wet etching

Country Status (1)

Country Link
TW (1) TW347575B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101989564B (en) * 2009-07-31 2012-09-26 中芯国际集成电路制造(上海)有限公司 Method for reducing corner defect of isolation channel of shallow trench

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101989564B (en) * 2009-07-31 2012-09-26 中芯国际集成电路制造(上海)有限公司 Method for reducing corner defect of isolation channel of shallow trench

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees