TW347575B - Method for forming shallow trench isolation region by selective wet etching - Google Patents
Method for forming shallow trench isolation region by selective wet etchingInfo
- Publication number
- TW347575B TW347575B TW086109200A TW86109200A TW347575B TW 347575 B TW347575 B TW 347575B TW 086109200 A TW086109200 A TW 086109200A TW 86109200 A TW86109200 A TW 86109200A TW 347575 B TW347575 B TW 347575B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- forming
- silicon
- ozone
- teos
- Prior art date
Links
Abstract
A method for forming a shallow trench isolation on a silicon wafer, the method comprising the steps of: forming a pad oxide layer on the wafer; forming a silicon nitride layer on the pad layer; forming a silicon-containing glass on the silicon nitride layer; forming a trench in the silicon-containing glass, the silicon nitride layer, the pad layer, and the wafer; forming an ozone-TEOS layer on the silicon-containing glass layer and filling back to the trench, in which the deposition rate of the ozone-TEOS layer on the trench is slower than the deposition rate of the ozone-TEOS layer on the silicon-containing glass layer; and applying a selective etching process to etch the ozone-TEOS to complete the etching process and leaving the residual ozone-TEOS on the trench.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086109200A TW347575B (en) | 1997-06-30 | 1997-06-30 | Method for forming shallow trench isolation region by selective wet etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086109200A TW347575B (en) | 1997-06-30 | 1997-06-30 | Method for forming shallow trench isolation region by selective wet etching |
Publications (1)
Publication Number | Publication Date |
---|---|
TW347575B true TW347575B (en) | 1998-12-11 |
Family
ID=58263988
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086109200A TW347575B (en) | 1997-06-30 | 1997-06-30 | Method for forming shallow trench isolation region by selective wet etching |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW347575B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101989564B (en) * | 2009-07-31 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing corner defect of isolation channel of shallow trench |
-
1997
- 1997-06-30 TW TW086109200A patent/TW347575B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101989564B (en) * | 2009-07-31 | 2012-09-26 | 中芯国际集成电路制造(上海)有限公司 | Method for reducing corner defect of isolation channel of shallow trench |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |