TW368723B - Shallow trench isolation process for integrated circuit - Google Patents
Shallow trench isolation process for integrated circuitInfo
- Publication number
- TW368723B TW368723B TW086116978A TW86116978A TW368723B TW 368723 B TW368723 B TW 368723B TW 086116978 A TW086116978 A TW 086116978A TW 86116978 A TW86116978 A TW 86116978A TW 368723 B TW368723 B TW 368723B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide
- substrate
- forming
- integrated circuit
- trench isolation
- Prior art date
Links
Landscapes
- Element Separation (AREA)
Abstract
The invention relates to a kind of shallow trench isolation process for integrated circuit which is used to improve the kink's effect and increase the quality of gate oxide. The method is that forming a sacrificed oxide on the substrate; proceeding channel ion implantation and well ion implantation on the substrate; removing the sacrificed oxide; forming gate oxide, a first polycide metal layer and a silicon nitride layer on the substrate; defining the component and etching a trench deep into the substrate; removing photoresistant mask and filled oxide in the trench with high density plasma; employing chemical mechanical polishing to polish the oxide; removing silicon nitride layer and depositing the second polycide metal layer; forming the gate and source/drain and proceeding the metalization process and accomplishing the manufacturing of components.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086116978A TW368723B (en) | 1997-11-14 | 1997-11-14 | Shallow trench isolation process for integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086116978A TW368723B (en) | 1997-11-14 | 1997-11-14 | Shallow trench isolation process for integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
TW368723B true TW368723B (en) | 1999-09-01 |
Family
ID=57941357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086116978A TW368723B (en) | 1997-11-14 | 1997-11-14 | Shallow trench isolation process for integrated circuit |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW368723B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465532A (en) * | 2013-09-24 | 2015-03-25 | 旺宏电子股份有限公司 | Shallow trench isolation structure and manufacturing method thereof |
TWI508224B (en) * | 2013-09-24 | 2015-11-11 | Macronix Int Co Ltd | Shallow trench isolation structure and method for manufacturing the same |
-
1997
- 1997-11-14 TW TW086116978A patent/TW368723B/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465532A (en) * | 2013-09-24 | 2015-03-25 | 旺宏电子股份有限公司 | Shallow trench isolation structure and manufacturing method thereof |
TWI508224B (en) * | 2013-09-24 | 2015-11-11 | Macronix Int Co Ltd | Shallow trench isolation structure and method for manufacturing the same |
CN104465532B (en) * | 2013-09-24 | 2017-06-16 | 旺宏电子股份有限公司 | Isolation structure of shallow trench and its manufacture method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |