TW368723B - Shallow trench isolation process for integrated circuit - Google Patents

Shallow trench isolation process for integrated circuit

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Publication number
TW368723B
TW368723B TW086116978A TW86116978A TW368723B TW 368723 B TW368723 B TW 368723B TW 086116978 A TW086116978 A TW 086116978A TW 86116978 A TW86116978 A TW 86116978A TW 368723 B TW368723 B TW 368723B
Authority
TW
Taiwan
Prior art keywords
oxide
substrate
forming
integrated circuit
trench isolation
Prior art date
Application number
TW086116978A
Other languages
Chinese (zh)
Inventor
Chien-Ting Lin
Water Lur
Shr-Wei Suen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086116978A priority Critical patent/TW368723B/en
Application granted granted Critical
Publication of TW368723B publication Critical patent/TW368723B/en

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Abstract

The invention relates to a kind of shallow trench isolation process for integrated circuit which is used to improve the kink's effect and increase the quality of gate oxide. The method is that forming a sacrificed oxide on the substrate; proceeding channel ion implantation and well ion implantation on the substrate; removing the sacrificed oxide; forming gate oxide, a first polycide metal layer and a silicon nitride layer on the substrate; defining the component and etching a trench deep into the substrate; removing photoresistant mask and filled oxide in the trench with high density plasma; employing chemical mechanical polishing to polish the oxide; removing silicon nitride layer and depositing the second polycide metal layer; forming the gate and source/drain and proceeding the metalization process and accomplishing the manufacturing of components.
TW086116978A 1997-11-14 1997-11-14 Shallow trench isolation process for integrated circuit TW368723B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086116978A TW368723B (en) 1997-11-14 1997-11-14 Shallow trench isolation process for integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086116978A TW368723B (en) 1997-11-14 1997-11-14 Shallow trench isolation process for integrated circuit

Publications (1)

Publication Number Publication Date
TW368723B true TW368723B (en) 1999-09-01

Family

ID=57941357

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086116978A TW368723B (en) 1997-11-14 1997-11-14 Shallow trench isolation process for integrated circuit

Country Status (1)

Country Link
TW (1) TW368723B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465532A (en) * 2013-09-24 2015-03-25 旺宏电子股份有限公司 Shallow trench isolation structure and manufacturing method thereof
TWI508224B (en) * 2013-09-24 2015-11-11 Macronix Int Co Ltd Shallow trench isolation structure and method for manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465532A (en) * 2013-09-24 2015-03-25 旺宏电子股份有限公司 Shallow trench isolation structure and manufacturing method thereof
TWI508224B (en) * 2013-09-24 2015-11-11 Macronix Int Co Ltd Shallow trench isolation structure and method for manufacturing the same
CN104465532B (en) * 2013-09-24 2017-06-16 旺宏电子股份有限公司 Isolation structure of shallow trench and its manufacture method

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees