TW336345B - Nitride cap amorphous silicon spacer local oxidation - Google Patents

Nitride cap amorphous silicon spacer local oxidation

Info

Publication number
TW336345B
TW336345B TW086116005A TW86116005A TW336345B TW 336345 B TW336345 B TW 336345B TW 086116005 A TW086116005 A TW 086116005A TW 86116005 A TW86116005 A TW 86116005A TW 336345 B TW336345 B TW 336345B
Authority
TW
Taiwan
Prior art keywords
layer
silicon nitride
silicon
forming
nitride layer
Prior art date
Application number
TW086116005A
Other languages
Chinese (zh)
Inventor
Wei-Shang Jin
Original Assignee
Mos Electronics Taiwan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mos Electronics Taiwan Inc filed Critical Mos Electronics Taiwan Inc
Priority to TW086116005A priority Critical patent/TW336345B/en
Application granted granted Critical
Publication of TW336345B publication Critical patent/TW336345B/en

Links

Abstract

A local oxidation isolation process comprising at least the following steps: forming a pad oxidation layer on a silicon substrate; forming a first silicon nitride layer on the pad oxidation layer; forming a photoresist layer on the first silicon nitride layer to define an active region; using the photoresist layer as the mask to remove a portion of the first silicon nitride layer and the pad oxidation layer; removing a portion of the edge of the pad oxidation layer to form a bottom-cut cavity underneath the first silicon nitride layer; forming a silicon dioxide layer on the silicon substrate between the pad oxidation layers; forming an amorphous silicon layer on the silicon dioxide layer and on the first silicon nitride layer and filling the bottom-cut cavity; removing a portion of the amorphous silicon layer to form an amorphous silicon gap wall on the lower edge of the side wall of the first silicon nitride layer and in the bottom-cut cavity; forming a second silicon nitride layer on the amorphous silicon gap wall, on the first silicon nitride layer and the silicon dioxide layer; removing a portion of the second silicon nitride layer to form a silicon nitride gap wall on the side wall of the first silicon nitride layer; forming a field oxidation region on the silicon substrate in the silicon nitride gap wall; removing the first silicon nitride layer; removing the silicon nitride gap wall; and removing the pad oxidation layer.
TW086116005A 1997-10-28 1997-10-28 Nitride cap amorphous silicon spacer local oxidation TW336345B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086116005A TW336345B (en) 1997-10-28 1997-10-28 Nitride cap amorphous silicon spacer local oxidation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086116005A TW336345B (en) 1997-10-28 1997-10-28 Nitride cap amorphous silicon spacer local oxidation

Publications (1)

Publication Number Publication Date
TW336345B true TW336345B (en) 1998-07-11

Family

ID=58263132

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086116005A TW336345B (en) 1997-10-28 1997-10-28 Nitride cap amorphous silicon spacer local oxidation

Country Status (1)

Country Link
TW (1) TW336345B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI620322B (en) * 2012-11-13 2018-04-01 三菱電機股份有限公司 Method of manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI620322B (en) * 2012-11-13 2018-04-01 三菱電機股份有限公司 Method of manufacturing semiconductor device

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees
GD4A Issue of patent certificate for granted invention patent