TW336345B - Nitride cap amorphous silicon spacer local oxidation - Google Patents
Nitride cap amorphous silicon spacer local oxidationInfo
- Publication number
- TW336345B TW336345B TW086116005A TW86116005A TW336345B TW 336345 B TW336345 B TW 336345B TW 086116005 A TW086116005 A TW 086116005A TW 86116005 A TW86116005 A TW 86116005A TW 336345 B TW336345 B TW 336345B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- silicon nitride
- silicon
- forming
- nitride layer
- Prior art date
Links
Abstract
A local oxidation isolation process comprising at least the following steps: forming a pad oxidation layer on a silicon substrate; forming a first silicon nitride layer on the pad oxidation layer; forming a photoresist layer on the first silicon nitride layer to define an active region; using the photoresist layer as the mask to remove a portion of the first silicon nitride layer and the pad oxidation layer; removing a portion of the edge of the pad oxidation layer to form a bottom-cut cavity underneath the first silicon nitride layer; forming a silicon dioxide layer on the silicon substrate between the pad oxidation layers; forming an amorphous silicon layer on the silicon dioxide layer and on the first silicon nitride layer and filling the bottom-cut cavity; removing a portion of the amorphous silicon layer to form an amorphous silicon gap wall on the lower edge of the side wall of the first silicon nitride layer and in the bottom-cut cavity; forming a second silicon nitride layer on the amorphous silicon gap wall, on the first silicon nitride layer and the silicon dioxide layer; removing a portion of the second silicon nitride layer to form a silicon nitride gap wall on the side wall of the first silicon nitride layer; forming a field oxidation region on the silicon substrate in the silicon nitride gap wall; removing the first silicon nitride layer; removing the silicon nitride gap wall; and removing the pad oxidation layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086116005A TW336345B (en) | 1997-10-28 | 1997-10-28 | Nitride cap amorphous silicon spacer local oxidation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW086116005A TW336345B (en) | 1997-10-28 | 1997-10-28 | Nitride cap amorphous silicon spacer local oxidation |
Publications (1)
Publication Number | Publication Date |
---|---|
TW336345B true TW336345B (en) | 1998-07-11 |
Family
ID=58263132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086116005A TW336345B (en) | 1997-10-28 | 1997-10-28 | Nitride cap amorphous silicon spacer local oxidation |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW336345B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI620322B (en) * | 2012-11-13 | 2018-04-01 | 三菱電機股份有限公司 | Method of manufacturing semiconductor device |
-
1997
- 1997-10-28 TW TW086116005A patent/TW336345B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI620322B (en) * | 2012-11-13 | 2018-04-01 | 三菱電機股份有限公司 | Method of manufacturing semiconductor device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees | ||
GD4A | Issue of patent certificate for granted invention patent |