KR970053432A - Device Separation Method of Semiconductor Device - Google Patents
Device Separation Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970053432A KR970053432A KR1019950057157A KR19950057157A KR970053432A KR 970053432 A KR970053432 A KR 970053432A KR 1019950057157 A KR1019950057157 A KR 1019950057157A KR 19950057157 A KR19950057157 A KR 19950057157A KR 970053432 A KR970053432 A KR 970053432A
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- KR
- South Korea
- Prior art keywords
- trench
- insulating material
- forming
- semiconductor substrate
- inactive region
- Prior art date
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- Element Separation (AREA)
Abstract
쉘로우 트렌치 분리(STI) 방법을 이용한 반도체 장치의 소자분리 방법에 대해 기재되어 있다.A device isolation method of a semiconductor device using a shallow trench isolation (STI) method is described.
이는, 반도체기판 상에 비활성영역과 활성영역을 한정하는 패턴을 형성하는 단계, 패턴을 마스크로 사용하여 반도체 기판의 비활성영역에 트렌치를 형성하는 단계, 트렌치의 내벽에 산화방지막을 형성하는 단계, 결과물상에 트렌치를 매립하기 위한 절연물질을 두껍게 증착하는 단계, 절연물질을 치밀화하는 단계 및 절연물질을 CMP함으로써 표면을 평탄화하는 단계를 포함하는 것을 특징으로 한다.This method comprises the steps of forming a pattern defining an inactive region and an active region on a semiconductor substrate, forming a trench in an inactive region of the semiconductor substrate using the pattern as a mask, forming an antioxidant film on the inner wall of the trench, and the resultant Thickly depositing an insulating material for embedding the trench on the trench, densifying the insulating material, and planarizing the surface by CMPing the insulating material.
따라서, 트렌치 매립 절연물질의 치밀화시 트렌치 내벽의 산화로 인한 결함을 방지하여 누설전류를 방지할 수 있다.Therefore, when densification of the trench buried insulating material, it is possible to prevent a defect due to oxidation of the inner wall of the trench to prevent leakage current.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제7도는 본 발명에 의한 반도체 장치의 소자분리 방법을 설명하기 위한 단면도들이다.7 is a cross-sectional view illustrating a device isolation method of a semiconductor device according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057157A KR970053432A (en) | 1995-12-26 | 1995-12-26 | Device Separation Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057157A KR970053432A (en) | 1995-12-26 | 1995-12-26 | Device Separation Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
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KR970053432A true KR970053432A (en) | 1997-07-31 |
Family
ID=66618982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950057157A KR970053432A (en) | 1995-12-26 | 1995-12-26 | Device Separation Method of Semiconductor Device |
Country Status (1)
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KR (1) | KR970053432A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100468692B1 (en) * | 1997-09-22 | 2005-03-16 | 삼성전자주식회사 | Method for forming isolation film having trench type to isolate devices |
KR100559042B1 (en) * | 1999-10-07 | 2006-03-10 | 주식회사 하이닉스반도체 | Method of shallow trench isolation film in a semiconductor device |
US8906761B2 (en) | 2012-09-10 | 2014-12-09 | Samsung Electronics Co., Ltd. | Method of manufacturing for semiconductor device using expandable material |
-
1995
- 1995-12-26 KR KR1019950057157A patent/KR970053432A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100468692B1 (en) * | 1997-09-22 | 2005-03-16 | 삼성전자주식회사 | Method for forming isolation film having trench type to isolate devices |
KR100559042B1 (en) * | 1999-10-07 | 2006-03-10 | 주식회사 하이닉스반도체 | Method of shallow trench isolation film in a semiconductor device |
US8906761B2 (en) | 2012-09-10 | 2014-12-09 | Samsung Electronics Co., Ltd. | Method of manufacturing for semiconductor device using expandable material |
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