KR970053432A - Device Separation Method of Semiconductor Device - Google Patents

Device Separation Method of Semiconductor Device Download PDF

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Publication number
KR970053432A
KR970053432A KR1019950057157A KR19950057157A KR970053432A KR 970053432 A KR970053432 A KR 970053432A KR 1019950057157 A KR1019950057157 A KR 1019950057157A KR 19950057157 A KR19950057157 A KR 19950057157A KR 970053432 A KR970053432 A KR 970053432A
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KR
South Korea
Prior art keywords
trench
insulating material
forming
semiconductor substrate
inactive region
Prior art date
Application number
KR1019950057157A
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Korean (ko)
Inventor
이한신
Original Assignee
김광호
삼성전자 주식회사
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057157A priority Critical patent/KR970053432A/en
Publication of KR970053432A publication Critical patent/KR970053432A/en

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Abstract

쉘로우 트렌치 분리(STI) 방법을 이용한 반도체 장치의 소자분리 방법에 대해 기재되어 있다.A device isolation method of a semiconductor device using a shallow trench isolation (STI) method is described.

이는, 반도체기판 상에 비활성영역과 활성영역을 한정하는 패턴을 형성하는 단계, 패턴을 마스크로 사용하여 반도체 기판의 비활성영역에 트렌치를 형성하는 단계, 트렌치의 내벽에 산화방지막을 형성하는 단계, 결과물상에 트렌치를 매립하기 위한 절연물질을 두껍게 증착하는 단계, 절연물질을 치밀화하는 단계 및 절연물질을 CMP함으로써 표면을 평탄화하는 단계를 포함하는 것을 특징으로 한다.This method comprises the steps of forming a pattern defining an inactive region and an active region on a semiconductor substrate, forming a trench in an inactive region of the semiconductor substrate using the pattern as a mask, forming an antioxidant film on the inner wall of the trench, and the resultant Thickly depositing an insulating material for embedding the trench on the trench, densifying the insulating material, and planarizing the surface by CMPing the insulating material.

따라서, 트렌치 매립 절연물질의 치밀화시 트렌치 내벽의 산화로 인한 결함을 방지하여 누설전류를 방지할 수 있다.Therefore, when densification of the trench buried insulating material, it is possible to prevent a defect due to oxidation of the inner wall of the trench to prevent leakage current.

Description

반도체 장치의 소자분리 방법Device Separation Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제7도는 본 발명에 의한 반도체 장치의 소자분리 방법을 설명하기 위한 단면도들이다.7 is a cross-sectional view illustrating a device isolation method of a semiconductor device according to the present invention.

Claims (3)

반도체기판 상에 비활성영역과 활성영역을 한정하는 패턴을 형성하는 단계; 상기 패턴을 마스크로 사용하여 반도체 기판의 비활성영역에 트렌치를 형성하는 단계; 상기 트렌치의 내벽에 산화방지막을 형성하는 단계; 결과물 상에 트렌치를 매립하기 위한 절연물질을 두껍게 증착하는 단계; 상기 절연물질을 치밀화하는 단계 ; 및 절연물질을 CMP함으로써 표면을 평탄화하는 단계를 포하는 것을 특징으로 하는 반도체 장치의 소자분리 방법.Forming a pattern defining an inactive region and an active region on the semiconductor substrate; Forming a trench in an inactive region of a semiconductor substrate using the pattern as a mask; Forming an anti-oxidation film on an inner wall of the trench; Thick depositing an insulating material for filling the trench on the resultant; Densifying the insulating material; And planarizing the surface by CMPing the insulating material. 제1항에 있어서, 상기 산화방지막은 실리콘질화막, 폴리실리콘, 아몰퍼스 실리콘중의 어느 한 물질로 형성되는 것을 특징으로 하는 반도체 장치의 소자분리 방법.The method of claim 1, wherein the anti-oxidation film is formed of any one of silicon nitride, polysilicon, and amorphous silicon. 제1항에 있어서, 상기 절연물질을 치밀화하는 단계는 습식산화 분위기에서 진행되는 것을 특징으로 하는 반도체 장치의 소자분리 방법.The method of claim 1, wherein the densifying of the insulating material is performed in a wet oxidation atmosphere. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057157A 1995-12-26 1995-12-26 Device Separation Method of Semiconductor Device KR970053432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057157A KR970053432A (en) 1995-12-26 1995-12-26 Device Separation Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057157A KR970053432A (en) 1995-12-26 1995-12-26 Device Separation Method of Semiconductor Device

Publications (1)

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KR970053432A true KR970053432A (en) 1997-07-31

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KR1019950057157A KR970053432A (en) 1995-12-26 1995-12-26 Device Separation Method of Semiconductor Device

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KR (1) KR970053432A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468692B1 (en) * 1997-09-22 2005-03-16 삼성전자주식회사 Method for forming isolation film having trench type to isolate devices
KR100559042B1 (en) * 1999-10-07 2006-03-10 주식회사 하이닉스반도체 Method of shallow trench isolation film in a semiconductor device
US8906761B2 (en) 2012-09-10 2014-12-09 Samsung Electronics Co., Ltd. Method of manufacturing for semiconductor device using expandable material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468692B1 (en) * 1997-09-22 2005-03-16 삼성전자주식회사 Method for forming isolation film having trench type to isolate devices
KR100559042B1 (en) * 1999-10-07 2006-03-10 주식회사 하이닉스반도체 Method of shallow trench isolation film in a semiconductor device
US8906761B2 (en) 2012-09-10 2014-12-09 Samsung Electronics Co., Ltd. Method of manufacturing for semiconductor device using expandable material

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