KR980006050A

KR980006050A - Device isolation film of semiconductor device and manufacturing method thereof

Info

Publication number: KR980006050A
Application number: KR1019960023975A
Authority: KR
Inventors: 김형섭
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1996-06-26
Filing date: 1996-06-26
Publication date: 1998-03-30

Abstract

반도체 소자의 소자분리막 및 그 제조방법에 대해 기재되어 있다. 이는 비활성 영역의 반도체 기판에 형성된 트렌치, 이 트렌치 내벽에 형성된 내벽산화막, 이 트렌치를 채우고 산화물로 형성된 제1 소자분리막 및 제1 소자분리막상에 형성되고 질화물로 형성된 제2 소자분리막을 포함하는 것을 특징으로 한다. 따라서, 본 발명에 의하면, 활성영역 주변의 소자분리막의 손상을 방지함으로써 소자들 간의 절연을 신뢰도 높게 달성할 수 있고 트랜지스터의 정션 누설을 방지할 수 있다.A device isolation film of a semiconductor device and a method of manufacturing the same are described. It includes a trench formed in a semiconductor substrate in an inactive region, an inner wall oxide film formed in the inner wall of the trench, a first device isolation film filled with the trench and formed of oxide, and a second device isolation film formed on the first device isolation film and formed of nitride. It is done. Therefore, according to the present invention, by preventing the damage of the device isolation film around the active region, the insulation between the devices can be achieved with high reliability and the junction leakage of the transistor can be prevented.

Description

Device isolation film of semiconductor device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3a도는 좁은 트렌치 분리 기술을 채용한 본 발명에 의한 소자분리막 형성방법을 공정순서대로 설명하기 위해 도시한 단면도이다.3A is a cross-sectional view for explaining a device isolation film forming method according to the present invention employing a narrow trench isolation technique in order of process.

제3b도는 좁은 트렌치 분리 기술을 채용한 본 발명에 의한 소자분리막 형성방법을 공정순서대로 설명하기 위해 도시한 단면도이다.3B is a cross-sectional view for explaining a device isolation film forming method according to the present invention employing a narrow trench isolation technique in order of process.

제3c도는 좁은 트렌치 분리 기술을 채용한 본 발명에 의한 소자분리막 형성방법을 공정순서대로 설명하기 위해 도시한 단면도이다.3C is a cross-sectional view for explaining a device isolation film forming method according to the present invention employing a narrow trench isolation technique in order of process.

제3d도는 좁은 트렌치 분리 기술을 채용한 본 발명에 의한 소자분리막 형성방법을 공정순서대로 설명하기 위해 도시한 단면도이다.3D is a cross-sectional view for explaining a device isolation film forming method according to the present invention employing a narrow trench isolation technique in the order of a process.

제3e도는 좁은 트렌치 분리 기술을 채용한 본 발명에 의한 소자분리막 형성방법을 공정순서대로 설명하기 위해 도시한 단면도이다.3E is a cross-sectional view for explaining a device isolation film forming method according to the present invention employing a narrow trench isolation technique in order of process.

제3f도는 좁은 트렌치 분리 기술을 채용한 본 발명에 의한 소자분리막 형성방법을 공정순서대로 설명하기 위해 도시한 단면도이다.3F is a cross-sectional view for explaining a device isolation film forming method according to the present invention employing a narrow trench isolation technique in order of process.

Claims

Trenches formed in the semiconductor substrate in the inactive region; An inner wall oxide film formed on the inner wall of the trench; A first device isolation layer filling the trench and formed of an oxide; And a second device isolation film formed on the first device isolation film and formed of nitride.

Forming a trench in the semiconductor substrate in the inactive region; Forming an inner wall oxide film on an inner wall of the trench; Forming a buried oxide film by filling the trench with an oxide; Etching the buried oxide film by wet etching to reduce its height to form a first device isolation layer made of an oxide; Forming a nitride film on an entire surface of the semiconductor substrate on which the first device isolation film is formed; And forming a second device isolation film made of nitride on the first device isolation film by chemically-physically polishing the nitride film.

※ Note: The disclosure is based on the initial application.