KR890015415A - Highly Integrated Semiconductor Memory and Manufacturing Method Thereof - Google Patents

Highly Integrated Semiconductor Memory and Manufacturing Method Thereof Download PDF

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Publication number
KR890015415A
KR890015415A KR1019880002800A KR880002800A KR890015415A KR 890015415 A KR890015415 A KR 890015415A KR 1019880002800 A KR1019880002800 A KR 1019880002800A KR 880002800 A KR880002800 A KR 880002800A KR 890015415 A KR890015415 A KR 890015415A
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South Korea
Prior art keywords
semiconductor memory
trench
polycrystalline silicon
manufacturing
highly integrated
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KR1019880002800A
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Korean (ko)
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KR910002040B1 (en
Inventor
강래구
신윤승
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강진구
삼성반도체통신 주식회사
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Priority to KR1019880002800A priority Critical patent/KR910002040B1/en
Publication of KR890015415A publication Critical patent/KR890015415A/en
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Publication of KR910002040B1 publication Critical patent/KR910002040B1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Abstract

내용 없음No content

Description

고집적화용 반도체 기억소자 및 그의 제조방법Highly Integrated Semiconductor Memory and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2 도는 본 발명 반도체 기억소자의 수직단면도, 제 3 도는 본 발명 반도체 기억소자의 제조방법을 설명하기위한 각 공정별 기억소자의 수직단면도이다.FIG. 2 is a vertical sectional view of the semiconductor memory device of the present invention, and FIG. 3 is a vertical sectional view of the memory device for each process for explaining the manufacturing method of the semiconductor memory device of the present invention.

Claims (2)

트랜치형 반도체 기억소자에 있어서, 누설전류를 차단하는 두꺼운 절연막(5)이 트랜치 상부(4)측벽에 설치되고 트랜지스터와 캐패시터를 연결시키는 다결정 실리콘(11)이 기판표면에 평탄하게 매립 설치되는 것을 특징으로 하는 고집적화용 반도체 기억소자.In the trench type semiconductor memory device, a thick insulating film 5 for blocking leakage current is provided on the side wall of the upper portion of the trench 4, and polycrystalline silicon 11 for connecting the transistor and the capacitor is embedded in the substrate surface flatly. Highly integrated semiconductor memory device. 트랜치형 반도체 기억소자의 제조방법에 있어서, 내부에 두꺼운 절연막(5)을 가지는 제 1 트랜치(4) 및 얇은 절연막(8)을 가지는 제 2 트랜치(6)를 차례로 형성하는 공정과, 상기 제1,2 트랜치(4,6)에 다결정 실리콘(9)을 충진시켜 캐패시터를 형성한후 두꺼운 절연마(5)의 상부를 식각하는 공정과, 여기에 다결정 실리콘(11)을 충진시킨후 기판 표면을 평탄화하는 공정과, 상기 다결정 실리콘(11)의 측벽을 통해 연결되는 트랜지스터의 소오스 및 드레인 영역(18)을 형성하는 공정과로 됨을 특징으로 하는 고집적화용 반도체 기억소자의 제조방법.A method of manufacturing a trench type semiconductor memory device, comprising: sequentially forming a first trench 4 having a thick insulating film 5 therein and a second trench 6 having a thin insulating film 8 therein; And filling the trenches 4 and 6 with polycrystalline silicon 9 to form a capacitor, and then etching the upper portion of the thick insulating hemp 5, and filling the polycrystalline silicon 11 with the substrate surface. And forming a source and drain region (18) of the transistor connected through the sidewalls of the polycrystalline silicon (11). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880002800A 1988-03-17 1988-03-17 Semiconductor memory device and manufacture thereof KR910002040B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880002800A KR910002040B1 (en) 1988-03-17 1988-03-17 Semiconductor memory device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880002800A KR910002040B1 (en) 1988-03-17 1988-03-17 Semiconductor memory device and manufacture thereof

Publications (2)

Publication Number Publication Date
KR890015415A true KR890015415A (en) 1989-10-30
KR910002040B1 KR910002040B1 (en) 1991-03-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880002800A KR910002040B1 (en) 1988-03-17 1988-03-17 Semiconductor memory device and manufacture thereof

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KR (1) KR910002040B1 (en)

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Publication number Publication date
KR910002040B1 (en) 1991-03-30

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