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Application filed by Vanguard Int Semiconduct CorpfiledCriticalVanguard Int Semiconduct Corp
Priority to TW85100324ApriorityCriticalpatent/TW284901B/en
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Publication of TW284901BpublicationCriticalpatent/TW284901B/en
An improved process of shallow trench, which is applicable to isolation of electric device in metal oxide semiconductor circuit process, comprises of: on one initially processed semiconductor substrate patterning active area with mask; in which the initially processed semiconductorsubstrate includes one semiconductor substrate, one pad oxide grown on the substrate and one Si3N4 deposited on the pad oxide; etching portion of the Si3N4, where is not patterned by the mask; depositing one first dielectric material on the Si3N4 surface and side wall; forming spacer on side wall of the Si3N4 by etching back; with the Si3N4 and the spacer as mask forming one trench by etch; etching the spacer by wet etch; growing one oxide on side wall and bottom of the trench for restoring defect generated by the trench; depositing one second dielectric material to fill the trench and cover the Si3N4; planarizing the second dielectric material; etching the Si4N4 and the pad oxide by etch.
TW85100324A1996-01-121996-01-12Process of shallow trench isolation
TW284901B
(en)