Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW82110520ApriorityCriticalpatent/TW283252B/en
Application grantedgrantedCritical
Publication of TW283252BpublicationCriticalpatent/TW283252B/en
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure
(AREA)
Drying Of Semiconductors
(AREA)
Abstract
A semiconductor manufacturing method by using dummy coating to prevent PR residue, includes: Depositing polysilicon; Coating a dummy coating above the polysilicon to fill the concave area; Coating PR/photo mask exposure; Etching dummy coating; Etching polysilicon; Removing PR and re-etching the dummy coating; Through adding the dummy coating to plainarize the surface for PR exposure.