KR970004478B1 - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
KR970004478B1
KR970004478B1 KR93027233A KR930027233A KR970004478B1 KR 970004478 B1 KR970004478 B1 KR 970004478B1 KR 93027233 A KR93027233 A KR 93027233A KR 930027233 A KR930027233 A KR 930027233A KR 970004478 B1 KR970004478 B1 KR 970004478B1
Authority
KR
South Korea
Prior art keywords
molecular weight
silylation
photoresist film
forming
semiconductor device
Prior art date
Application number
KR93027233A
Other languages
Korean (ko)
Other versions
KR950021028A (en
Inventor
Tae-Kyung Won
Hyung-Soo Kim
Seung-Chan Moon
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93027233A priority Critical patent/KR970004478B1/en
Publication of KR950021028A publication Critical patent/KR950021028A/en
Application granted granted Critical
Publication of KR970004478B1 publication Critical patent/KR970004478B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention provides a method of making a semiconductor device which can enhance contrast by performing a silylation twice with a silicon source of large molecular weight and a silicon of small molecular weight, thus forming a microscopic pattern. The inventive method includes the steps of forming a photoresist film; performing a first silylation on the photoresist film by using a silicon source with a large molecular weight; performing a second silylation on the photoresist film by using a silicon source with a small molecular weight to form a silylation layer on the exposed region; and forming a photoresist pattern by removing the photoresist film's non-exposed region.
KR93027233A 1993-12-10 1993-12-10 Manufacturing method of semiconductor device KR970004478B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93027233A KR970004478B1 (en) 1993-12-10 1993-12-10 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93027233A KR970004478B1 (en) 1993-12-10 1993-12-10 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
KR950021028A KR950021028A (en) 1995-07-26
KR970004478B1 true KR970004478B1 (en) 1997-03-28

Family

ID=19370560

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93027233A KR970004478B1 (en) 1993-12-10 1993-12-10 Manufacturing method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970004478B1 (en)

Also Published As

Publication number Publication date
KR950021028A (en) 1995-07-26

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