TW331023B - Overlap precision measuring mark, defect modification method, mask with the mark, and fabricating method and exposing method thereof
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Overlap precision measuring mark, defect modification method, mask with the mark, and fabricating method and exposing method thereof
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Exposure And Positioning Against Photoresist Photosensitive Materials
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Abstract
An overlap precision measuring mark comprises: (1) Semiconductor device forming region, thereon forming pattern of multi-layers constituting semiconductor device with predetermined pattern; (2) Overlap precision measuring mark forming region for measuring said each overlap precision constituting said semiconductor device; (3) First semiconductor device constituting member formed on first layer in said semiconductor device forming region; (4) First measuring mark formed by the same process with said first semiconductor device constituting member; (5) Second layer second semiconductor device formed on said first layer in said semiconductor forming region; (6) Second measuring mark formed by the same process with said second semiconductor device constituting member for measuring overlap precision between said first semiconductor device constituting member and said second semiconductor device constituting member, in which said first measuring mark has pattern with same aberration influence when receiving or radiating said first semiconductor device constituting member; (7) Said second measuring mark having pattern with same aberration influence when receiving or radiating said first semiconductor device constituting member.
TW084107063A1995-06-271995-07-06Overlap precision measuring mark, defect modification method, mask with the mark, and fabricating method and exposing method thereof
TW331023B
(en)
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