TW331023B - Overlap precision measuring mark, defect modification method, mask with the mark, and fabricating method and exposing method thereof - Google Patents

Overlap precision measuring mark, defect modification method, mask with the mark, and fabricating method and exposing method thereof

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Publication number
TW331023B
TW331023B TW084107063A TW84107063A TW331023B TW 331023 B TW331023 B TW 331023B TW 084107063 A TW084107063 A TW 084107063A TW 84107063 A TW84107063 A TW 84107063A TW 331023 B TW331023 B TW 331023B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
mark
measuring mark
constituting member
overlap precision
Prior art date
Application number
TW084107063A
Other languages
Chinese (zh)
Inventor
Kouichirou Narimatsu
Shigenori Yamashita
Shinya Soeda
Atsushi Hachisuga
Kouji Taniguchi
Miyamoto Yuki
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW331023B publication Critical patent/TW331023B/en

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Abstract

An overlap precision measuring mark comprises: (1) Semiconductor device forming region, thereon forming pattern of multi-layers constituting semiconductor device with predetermined pattern; (2) Overlap precision measuring mark forming region for measuring said each overlap precision constituting said semiconductor device; (3) First semiconductor device constituting member formed on first layer in said semiconductor device forming region; (4) First measuring mark formed by the same process with said first semiconductor device constituting member; (5) Second layer second semiconductor device formed on said first layer in said semiconductor forming region; (6) Second measuring mark formed by the same process with said second semiconductor device constituting member for measuring overlap precision between said first semiconductor device constituting member and said second semiconductor device constituting member, in which said first measuring mark has pattern with same aberration influence when receiving or radiating said first semiconductor device constituting member; (7) Said second measuring mark having pattern with same aberration influence when receiving or radiating said first semiconductor device constituting member.
TW084107063A 1995-06-27 1995-07-06 Overlap precision measuring mark, defect modification method, mask with the mark, and fabricating method and exposing method thereof TW331023B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16074195 1995-06-27

Publications (1)

Publication Number Publication Date
TW331023B true TW331023B (en) 1998-05-01

Family

ID=58262669

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084107063A TW331023B (en) 1995-06-27 1995-07-06 Overlap precision measuring mark, defect modification method, mask with the mark, and fabricating method and exposing method thereof

Country Status (1)

Country Link
TW (1) TW331023B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460529B (en) * 2008-06-27 2014-11-11 Hoya Corp Photomask manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460529B (en) * 2008-06-27 2014-11-11 Hoya Corp Photomask manufacturing method

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