TW344877B - Method for simultaneously measuring the accuracy and critical dimension of overlay of wafer metrology pattern - Google Patents

Method for simultaneously measuring the accuracy and critical dimension of overlay of wafer metrology pattern

Info

Publication number
TW344877B
TW344877B TW085105294A TW85105294A TW344877B TW 344877 B TW344877 B TW 344877B TW 085105294 A TW085105294 A TW 085105294A TW 85105294 A TW85105294 A TW 85105294A TW 344877 B TW344877 B TW 344877B
Authority
TW
Taiwan
Prior art keywords
critical dimension
overlay
accuracy
wafer metrology
metrology pattern
Prior art date
Application number
TW085105294A
Other languages
Chinese (zh)
Inventor
Liang-Jiuh Shiah
Dong-Long Jang
Original Assignee
Mos Electronics Taiwan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mos Electronics Taiwan Inc filed Critical Mos Electronics Taiwan Inc
Priority to TW085105294A priority Critical patent/TW344877B/en
Application granted granted Critical
Publication of TW344877B publication Critical patent/TW344877B/en

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Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A measurement of the critical dimension and overlay alignment of wafer metrology pattern applied on a semiconductor process, the wafer metrology pattern comprising: a center body for testing the reference of alignment in the overlay; at least a linear structure formed on the periphery of the center body for testing the reference of the critical dimension; and at least an L-shape structure formed on both sides of the center body for measuring the reference of the critical dimension.
TW085105294A 1996-05-03 1996-05-03 Method for simultaneously measuring the accuracy and critical dimension of overlay of wafer metrology pattern TW344877B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085105294A TW344877B (en) 1996-05-03 1996-05-03 Method for simultaneously measuring the accuracy and critical dimension of overlay of wafer metrology pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085105294A TW344877B (en) 1996-05-03 1996-05-03 Method for simultaneously measuring the accuracy and critical dimension of overlay of wafer metrology pattern

Publications (1)

Publication Number Publication Date
TW344877B true TW344877B (en) 1998-11-11

Family

ID=58263782

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085105294A TW344877B (en) 1996-05-03 1996-05-03 Method for simultaneously measuring the accuracy and critical dimension of overlay of wafer metrology pattern

Country Status (1)

Country Link
TW (1) TW344877B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11119414B2 (en) 2013-12-17 2021-09-14 Asml Netherlands B.V. Yield estimation and control

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11119414B2 (en) 2013-12-17 2021-09-14 Asml Netherlands B.V. Yield estimation and control

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees