TW372331B - Manufacturing method for semiconductor integrated circuit apparatus and manufacturing method of phase shift mask for exposing with the semiconductor integrated circuit apparatus - Google Patents

Manufacturing method for semiconductor integrated circuit apparatus and manufacturing method of phase shift mask for exposing with the semiconductor integrated circuit apparatus

Info

Publication number
TW372331B
TW372331B TW084110660A TW84110660A TW372331B TW 372331 B TW372331 B TW 372331B TW 084110660 A TW084110660 A TW 084110660A TW 84110660 A TW84110660 A TW 84110660A TW 372331 B TW372331 B TW 372331B
Authority
TW
Taiwan
Prior art keywords
manufacturing
integrated circuit
semiconductor integrated
mask
circuit apparatus
Prior art date
Application number
TW084110660A
Other languages
Chinese (zh)
Inventor
Yoshihiko Okamoto
Tsuneo Terasawa
Akira Imai
Norio Hasegawa
Shinji Okazaki
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW372331B publication Critical patent/TW372331B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A kind of manufacturing method for semiconductor integrated circuit apparatus when employing the phase shift mask composed of two overlapped mask to proceed the exposure process, in order to prevent the position shift of contact junction so that it employs: the first mask pattern composed of the covered region and transparent region; and the second mask of the pattern used for triggering the light to be phase shift. The pattern forming faces are opposite to each other, close together, or contact each other as the overlapped so as to form the overlapped mask for the exposure process; before the exposure, the height position of semiconductor wafer moves toward the light axis associated with the thickness of substrate of the second mask.
TW084110660A 1994-10-26 1995-10-11 Manufacturing method for semiconductor integrated circuit apparatus and manufacturing method of phase shift mask for exposing with the semiconductor integrated circuit apparatus TW372331B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP26293894 1994-10-26
JP4386195 1995-03-03
JP22372795A JPH08306621A (en) 1994-10-26 1995-08-31 Method of exposure, aligner and manufacture of semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
TW372331B true TW372331B (en) 1999-10-21

Family

ID=27291696

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084110660A TW372331B (en) 1994-10-26 1995-10-11 Manufacturing method for semiconductor integrated circuit apparatus and manufacturing method of phase shift mask for exposing with the semiconductor integrated circuit apparatus

Country Status (3)

Country Link
JP (1) JPH08306621A (en)
KR (1) KR960015093A (en)
TW (1) TW372331B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100780761B1 (en) * 2001-06-29 2007-11-30 주식회사 하이닉스반도체 Controlling Method of Adjusting a Position Using Mask Process
JP2006019586A (en) * 2004-07-02 2006-01-19 Sanyo Electric Co Ltd Manufacturing method of nitride semiconductor light emitting device
CN104281019B (en) * 2013-07-08 2016-02-17 中芯国际集成电路制造(上海)有限公司 Changing to value calibration method of photoetching
CN113985703B (en) * 2021-09-28 2023-11-03 深圳市麓邦技术有限公司 Optical system

Also Published As

Publication number Publication date
KR960015093A (en) 1996-05-22
JPH08306621A (en) 1996-11-22

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees