JPS51146174A - Diode device fabrication method - Google Patents

Diode device fabrication method

Info

Publication number
JPS51146174A
JPS51146174A JP7047975A JP7047975A JPS51146174A JP S51146174 A JPS51146174 A JP S51146174A JP 7047975 A JP7047975 A JP 7047975A JP 7047975 A JP7047975 A JP 7047975A JP S51146174 A JPS51146174 A JP S51146174A
Authority
JP
Japan
Prior art keywords
fabrication method
diode device
device fabrication
daubed
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7047975A
Other languages
Japanese (ja)
Other versions
JPS5734646B2 (en
Inventor
Yoichi Akasaka
Kazuo Horie
Katsuhiro Tsukamoto
Hiroichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7047975A priority Critical patent/JPS51146174A/en
Publication of JPS51146174A publication Critical patent/JPS51146174A/en
Publication of JPS5734646B2 publication Critical patent/JPS5734646B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: A diode device fabrication method, that simplifies process by utilizing photo-resist film as a mask while making daubed multi-crystal silicone formed by ion injection as diffusion source.
COPYRIGHT: (C)1976,JPO&Japio
JP7047975A 1975-06-11 1975-06-11 Diode device fabrication method Granted JPS51146174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7047975A JPS51146174A (en) 1975-06-11 1975-06-11 Diode device fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7047975A JPS51146174A (en) 1975-06-11 1975-06-11 Diode device fabrication method

Publications (2)

Publication Number Publication Date
JPS51146174A true JPS51146174A (en) 1976-12-15
JPS5734646B2 JPS5734646B2 (en) 1982-07-24

Family

ID=13432687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7047975A Granted JPS51146174A (en) 1975-06-11 1975-06-11 Diode device fabrication method

Country Status (1)

Country Link
JP (1) JPS51146174A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154267A (en) * 1982-03-08 1983-09-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing bipolar transistor
JPS63226920A (en) * 1987-03-16 1988-09-21 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
US6342714B1 (en) 1998-02-16 2002-01-29 Nec Corporation HSG lower electrode structure having a neck supported by a silicon layer

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737942A (en) * 1980-08-13 1982-03-02 Toshiba Corp Optical signal relay system
JPH07109995B2 (en) * 1989-04-24 1995-11-22 三菱電機株式会社 Optical transmission interface

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504976A (en) * 1973-05-16 1975-01-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504976A (en) * 1973-05-16 1975-01-20

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154267A (en) * 1982-03-08 1983-09-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of producing bipolar transistor
JPH0376575B2 (en) * 1982-03-08 1991-12-05 Intaanashonaru Bijinesu Mashiinzu Corp
JPS63226920A (en) * 1987-03-16 1988-09-21 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
US6342714B1 (en) 1998-02-16 2002-01-29 Nec Corporation HSG lower electrode structure having a neck supported by a silicon layer

Also Published As

Publication number Publication date
JPS5734646B2 (en) 1982-07-24

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