Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW84112456ApriorityCriticalpatent/TW290708B/en
Application grantedgrantedCritical
Publication of TW290708BpublicationCriticalpatent/TW290708B/en
Preparing Plates And Mask In Photomechanical Process
(AREA)
Abstract
A manufacturing method of phase-shifted photo-mask includes following steps: - Provide a transparent substrate; - Form a transparent film layer on substrate; - Form a non-transparent film layer on transparent film layer; - Form a PR layer of reserving pattern on non-transparent film layer; - Anisotropic etching the non-transparent and transparent film layer by using PR as mask; - Isotropic etching the PR layer and make the residual PR layer just cover non-transparent film layer; - Anisotropic etching the non-transparent film layer by using residual PR layer as mask; - Remove the PR layer.
TW84112456A1995-11-221995-11-22The manufacturing method of phase-shifted photo-mask
TW290708B
(en)
Manufacturing method for semiconductor integrated circuit apparatus and manufacturing method of phase shift mask for exposing with the semiconductor integrated circuit apparatus