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Application filed by Vanguard Int Semiconduct CorpfiledCriticalVanguard Int Semiconduct Corp
Priority to TW087103862ApriorityCriticalpatent/TW373238B/en
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Publication of TW373238BpublicationCriticalpatent/TW373238B/en
Photosensitive Polymer And Photoresist Processing
(AREA)
Abstract
A kind of image forming micro-image method. This invention at least comprises preliminarily formed semiconductor layer onto the semiconductor substrate, and to coat a layer of 1.2 micrometer thick light blocking layer on the semiconductor layer, wherein placing a light cover on the said light blocking layer to define the image. Right after that, to expose the light blocking layer under the rays, and so printing the image to the light blocking layer. After the exposing of the said image, to take light blocking layer to be etch cover, etching semiconductor layer, and thus forming defined image inside the semiconductor layer.
Manufacturing method for semiconductor integrated circuit apparatus and manufacturing method of phase shift mask for exposing with the semiconductor integrated circuit apparatus