WO2003089990A3 - Process for etching photomasks - Google Patents

Process for etching photomasks Download PDF

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Publication number
WO2003089990A3
WO2003089990A3 PCT/US2003/011549 US0311549W WO03089990A3 WO 2003089990 A3 WO2003089990 A3 WO 2003089990A3 US 0311549 W US0311549 W US 0311549W WO 03089990 A3 WO03089990 A3 WO 03089990A3
Authority
WO
WIPO (PCT)
Prior art keywords
processing
substrate
gas
layer disposed
etching
Prior art date
Application number
PCT/US2003/011549
Other languages
French (fr)
Other versions
WO2003089990A2 (en
Inventor
Mark Mueller
Ki-Ho Baik
Serguei Komarov
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2003089990A2 publication Critical patent/WO2003089990A2/en
Publication of WO2003089990A3 publication Critical patent/WO2003089990A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal photomask layer disposed on a silicon-based material in a processing chamber, introducing a processing gas at a flow rate of greater than about 350 sccm with the processing gas comprising an oxygen containing gas, a halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, generating a bias of about 50 watts or less, and etching exposed portions of the metal layer disposed on the substrate.
PCT/US2003/011549 2002-04-19 2003-04-16 Process for etching photomasks WO2003089990A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37423902P 2002-04-19 2002-04-19
US60/374,239 2002-04-19

Publications (2)

Publication Number Publication Date
WO2003089990A2 WO2003089990A2 (en) 2003-10-30
WO2003089990A3 true WO2003089990A3 (en) 2004-06-10

Family

ID=29251166

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/011549 WO2003089990A2 (en) 2002-04-19 2003-04-16 Process for etching photomasks

Country Status (3)

Country Link
US (1) US20040000535A1 (en)
TW (1) TW200401946A (en)
WO (1) WO2003089990A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6960413B2 (en) 2003-03-21 2005-11-01 Applied Materials, Inc. Multi-step process for etching photomasks
US7077973B2 (en) * 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
US7521000B2 (en) * 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
KR100823949B1 (en) * 2005-06-30 2008-04-22 어플라이드 머티어리얼스, 인코포레이티드 Method and apparatus for photomask plasma etching
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
KR100944846B1 (en) * 2006-10-30 2010-03-04 어플라이드 머티어리얼스, 인코포레이티드 Mask etch process
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2121198A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
US5262257A (en) * 1989-07-13 1993-11-16 Canon Kabushiki Kaisha Mask for lithography
US5595844A (en) * 1990-11-29 1997-01-21 Kabushiki Kaisha Toshiba Method of exposing light in a method of fabricating a reticle
US5246801A (en) * 1991-09-20 1993-09-21 At&T Bell Laboratories Method of repairing indentations in phase-shifting lithographic masks
US6007732A (en) * 1993-03-26 1999-12-28 Fujitsu Limited Reduction of reflection by amorphous carbon
CA2157257C (en) * 1994-09-12 1999-08-10 Kazuhiko Endo Semiconductor device with amorphous carbon layer and method of fabricating the same
US5948570A (en) * 1995-05-26 1999-09-07 Lucent Technologies Inc. Process for dry lithographic etching
US5773199A (en) * 1996-09-09 1998-06-30 Vanguard International Semiconductor Corporation Method for controlling linewidth by etching bottom anti-reflective coating
US6095883A (en) * 1997-07-07 2000-08-01 Candlescent Technologies Corporation Spatially uniform deposition of polymer particles during gate electrode formation
US6039621A (en) * 1997-07-07 2000-03-21 Candescent Technologies Corporation Gate electrode formation method
US6475704B1 (en) * 1997-09-12 2002-11-05 Canon Kabushiki Kaisha Method for forming fine structure
US6143476A (en) * 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US6037265A (en) * 1998-02-12 2000-03-14 Applied Materials, Inc. Etchant gas and a method for etching transistor gates
US5994235A (en) * 1998-06-24 1999-11-30 Lam Research Corporation Methods for etching an aluminum-containing layer
US6114250A (en) * 1998-08-17 2000-09-05 Lam Research Corporation Techniques for etching a low capacitance dielectric layer on a substrate
JP2000098116A (en) * 1998-09-18 2000-04-07 Canon Inc Element or manufacture of mold for manufacturing element
US6251217B1 (en) * 1999-01-27 2001-06-26 Applied Materials, Inc. Reticle adapter for a reactive ion etch system
JP3437517B2 (en) * 1999-02-16 2003-08-18 キヤノン株式会社 Manufacturing method of two-dimensional phase type optical element
JP2000260686A (en) * 1999-03-08 2000-09-22 Toshiba Corp Exposure method and aligner
KR100307629B1 (en) * 1999-04-30 2001-09-26 윤종용 Method for forming and applicating a anti reflective film using hydrocarbon based gas
US6472107B1 (en) * 1999-09-30 2002-10-29 Photronics, Inc. Disposable hard mask for photomask plasma etching
JP3974319B2 (en) * 2000-03-30 2007-09-12 株式会社東芝 Etching method
US6420088B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
JP2002072445A (en) * 2000-09-04 2002-03-12 Dainippon Printing Co Ltd Halftone phase shift photomask and blank for the same
US6599666B2 (en) * 2001-03-15 2003-07-29 Micron Technology, Inc. Multi-layer, attenuated phase-shifting mask
WO2003021659A1 (en) * 2001-09-04 2003-03-13 Applied Materials, Inc. Methods and apparatus for etching metal layers on substrates
TW567394B (en) * 2001-10-22 2003-12-21 Unaxis Usa Inc Apparatus for processing a photomask, method for processing a substrate, and method of employing a plasma reactor to etch a thin film upon a substrate
US6730454B2 (en) * 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
AOYAMA S ET AL: "Advanced Cr dry etching process", PROC. SPIE - INT. SOC. OPT. ENG. (USA), PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 1999, SPIE-INT. SOC. OPT. ENG, USA, vol. 3748, April 1999 (1999-04-01), pages 137 - 146, XP002268866, ISSN: 0277-786X *
FUJISAWA T ET AL: "Evaluation of NLD mask dry etching system", PROC. SPIE - INT. SOC. OPT. ENG. (USA), PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 1999, SPIE-INT. SOC. OPT. ENG, USA, vol. 3748, 1999, pages 147 - 152, XP002268890, ISSN: 0277-786X *
HYUK-JOO KWON ET AL: "Loading effect parameters of dry etcher system and their analysis in mask-to-mask loading and within mask loading", PROC. SPIE - INT. SOC. OPT. ENG. (USA), PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 2002, SPIE-INT. SOC. OPT. ENG, USA, vol. 4562, October 2002 (2002-10-01), pages 79 - 87, XP002268869, ISSN: 0277-786X *
RUHL G ET AL: "Chrome dry etch process characterization using surface nanoprofiling", PROC. SPIE - INT. SOC. OPT. ENG. (USA), PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 2001, SPIE-INT. SOC. OPT. ENG, USA, vol. 4186, 2001, pages 97 - 107, XP002268889, ISSN: 0277-786X *

Also Published As

Publication number Publication date
TW200401946A (en) 2004-02-01
US20040000535A1 (en) 2004-01-01
WO2003089990A2 (en) 2003-10-30

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