WO2001096955A3 - A method and apparatus for etching metal layers on substrates - Google Patents

A method and apparatus for etching metal layers on substrates Download PDF

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Publication number
WO2001096955A3
WO2001096955A3 PCT/US2001/019282 US0119282W WO0196955A3 WO 2001096955 A3 WO2001096955 A3 WO 2001096955A3 US 0119282 W US0119282 W US 0119282W WO 0196955 A3 WO0196955 A3 WO 0196955A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
processing
gas
substrates
metal layers
Prior art date
Application number
PCT/US2001/019282
Other languages
French (fr)
Other versions
WO2001096955A2 (en
Inventor
Briggitte Stoehr
Michael Welch
Melissa J Buie
Original Assignee
Applied Materials Inc
Briggitte Stoehr
Michael Welch
Melissa J Buie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Briggitte Stoehr, Michael Welch, Melissa J Buie filed Critical Applied Materials Inc
Priority to JP2002511020A priority Critical patent/JP2004503829A/en
Priority to EP01946420A priority patent/EP1290495A2/en
Priority to US10/024,958 priority patent/US20030003374A1/en
Publication of WO2001096955A2 publication Critical patent/WO2001096955A2/en
Publication of WO2001096955A3 publication Critical patent/WO2001096955A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Abstract

Method and apparatus for etching a metal layer disposed on a substrate, such as a photomask, are provided. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising (i) one or more hydrogen containing fluorocarbons, (ii) an oxygen containing gas, (iii) a chlorine containing gas, and optionally, (iv) an inert gas into the processing chamber, wherein the substrate is maintained at a reduced temperature, and the processing gas is excited into a plasma state at a reduced power level to etch exposed portions of the metal layer disposed on the substrate.
PCT/US2001/019282 2000-06-15 2001-06-15 A method and apparatus for etching metal layers on substrates WO2001096955A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002511020A JP2004503829A (en) 2000-06-15 2001-06-15 Method and apparatus for etching a metal layer on a substrate
EP01946420A EP1290495A2 (en) 2000-06-15 2001-06-15 A method and apparatus for etching metal layers on substrates
US10/024,958 US20030003374A1 (en) 2001-06-15 2001-12-18 Etch process for photolithographic reticle manufacturing with improved etch bias

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21167000P 2000-06-15 2000-06-15
US60/211,670 2000-06-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/024,958 Continuation-In-Part US20030003374A1 (en) 2001-06-15 2001-12-18 Etch process for photolithographic reticle manufacturing with improved etch bias

Publications (2)

Publication Number Publication Date
WO2001096955A2 WO2001096955A2 (en) 2001-12-20
WO2001096955A3 true WO2001096955A3 (en) 2002-11-28

Family

ID=22787882

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/019282 WO2001096955A2 (en) 2000-06-15 2001-06-15 A method and apparatus for etching metal layers on substrates

Country Status (3)

Country Link
EP (1) EP1290495A2 (en)
JP (1) JP2004503829A (en)
WO (1) WO2001096955A2 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115523B2 (en) 2000-05-22 2006-10-03 Applied Materials, Inc. Method and apparatus for etching photomasks
US6391790B1 (en) 2000-05-22 2002-05-21 Applied Materials, Inc. Method and apparatus for etching photomasks
JP4780264B2 (en) * 2001-05-16 2011-09-28 信越化学工業株式会社 Method for forming chromium-based photomask
US7183201B2 (en) 2001-07-23 2007-02-27 Applied Materials, Inc. Selective etching of organosilicate films over silicon oxide stop etch layers
WO2003021659A1 (en) * 2001-09-04 2003-03-13 Applied Materials, Inc. Methods and apparatus for etching metal layers on substrates
US6960413B2 (en) 2003-03-21 2005-11-01 Applied Materials, Inc. Multi-step process for etching photomasks
JP4272654B2 (en) 2003-04-11 2009-06-03 Ｈｏｙａ株式会社 Chromium-based thin film etching method and photomask manufacturing method
US7077973B2 (en) 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US7879510B2 (en) * 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US7790334B2 (en) 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
US7829243B2 (en) * 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
CN101054673B (en) * 2006-04-14 2014-04-30 应用材料公司 Light shield plasma etching method using protective cover
KR100944846B1 (en) * 2006-10-30 2010-03-04 어플라이드 머티어리얼스, 인코포레이티드 Mask etch process
US7955516B2 (en) * 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
US7786019B2 (en) 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
CN111399348B (en) * 2020-04-17 2023-03-31 淮北师范大学 Method for inhibiting collapse and adhesion of photoresist pattern structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2701458A1 (en) * 1976-01-16 1977-07-21 Fuji Photo Film Co Ltd Permanent stable pattern prodn. using silver image as mask - for gas plasma etching of underlying image-forming layer on substrate (NL 19.7.77)
JPS60219748A (en) * 1984-04-16 1985-11-02 Mitsubishi Electric Corp Pattern formation by dry etching
JPS62181433A (en) * 1986-02-04 1987-08-08 Mitsubishi Electric Corp Dry etching method
US5994235A (en) * 1998-06-24 1999-11-30 Lam Research Corporation Methods for etching an aluminum-containing layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2701458A1 (en) * 1976-01-16 1977-07-21 Fuji Photo Film Co Ltd Permanent stable pattern prodn. using silver image as mask - for gas plasma etching of underlying image-forming layer on substrate (NL 19.7.77)
JPS60219748A (en) * 1984-04-16 1985-11-02 Mitsubishi Electric Corp Pattern formation by dry etching
JPS62181433A (en) * 1986-02-04 1987-08-08 Mitsubishi Electric Corp Dry etching method
US5994235A (en) * 1998-06-24 1999-11-30 Lam Research Corporation Methods for etching an aluminum-containing layer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 010, no. 069 (E - 389) 18 March 1986 (1986-03-18) *
PATENT ABSTRACTS OF JAPAN vol. 012, no. 024 (E - 576) 23 January 1988 (1988-01-23) *

Also Published As

Publication number Publication date
JP2004503829A (en) 2004-02-05
EP1290495A2 (en) 2003-03-12
WO2001096955A2 (en) 2001-12-20

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