WO2001029879A3 - Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing - Google Patents

Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing Download PDF

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Publication number
WO2001029879A3
WO2001029879A3 PCT/US2000/028955 US0028955W WO0129879A3 WO 2001029879 A3 WO2001029879 A3 WO 2001029879A3 US 0028955 W US0028955 W US 0028955W WO 0129879 A3 WO0129879 A3 WO 0129879A3
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WO
Grant status
Application
Patent type
Prior art keywords
gas
methods
systems
reduced
integrated circuit
Prior art date
Application number
PCT/US2000/028955
Other languages
French (fr)
Other versions
WO2001029879A2 (en )
Original Assignee
Mattson Tech Inc
Savas Stephen E
Zajac John
Guerra Robert
Helle Wolfgang
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • H01L21/31138Etching organic layers by chemical means by dry-etching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/427Stripping or agents therefor using plasma means only
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • H01J2237/3342Resist stripping

Abstract

Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent "popping" of the photoresist which can cause particulate contamination. The gas flow may comprise a principal gas, an inert diluent gas, and an additive gas. Principal gases for HDIS may comprise oxygen, hydrogen and water vapor at pressures less than about 200 mTorr and a bias may be applied to the substrate support. When low-k dielectric material is present on vertical surfaces, reduced ion bombardment on vertical surfaces may be used, and a protective layer may be deposited on those surfaces.
PCT/US2000/028955 1999-10-20 2000-10-19 Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing WO2001029879A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US16055499 true 1999-10-20 1999-10-20
US60/160,554 1999-10-20

Publications (2)

Publication Number Publication Date
WO2001029879A2 true WO2001029879A2 (en) 2001-04-26
WO2001029879A3 true true WO2001029879A3 (en) 2002-01-24

Family

ID=22577370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/028955 WO2001029879A3 (en) 1999-10-20 2000-10-19 Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing

Country Status (1)

Country Link
WO (1) WO2001029879A3 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6561796B1 (en) 1999-09-07 2003-05-13 Novellus Systems, Inc. Method of semiconductor wafer heating to prevent bowing
US6893969B2 (en) 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6620733B2 (en) 2001-02-12 2003-09-16 Lam Research Corporation Use of hydrocarbon addition for the elimination of micromasking during etching of organic low-k dielectrics
US6777344B2 (en) 2001-02-12 2004-08-17 Lam Research Corporation Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications
US6872652B2 (en) 2001-08-28 2005-03-29 Infineon Technologies Ag Method of cleaning an inter-level dielectric interconnect
DE10154966A1 (en) * 2001-10-31 2003-05-22 Infineon Technologies Ag A process for producing a semiconductor device
KR100379210B1 (en) * 2002-04-19 2003-04-08 피.에스.케이.테크(주) Method for Semiconductor Wafer Ashing
US7977390B2 (en) 2002-10-11 2011-07-12 Lam Research Corporation Method for plasma etching performance enhancement
US7169695B2 (en) 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
US7169231B2 (en) 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US7534363B2 (en) 2002-12-13 2009-05-19 Lam Research Corporation Method for providing uniform removal of organic material
US7294580B2 (en) 2003-04-09 2007-11-13 Lam Research Corporation Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
US6897162B2 (en) * 2003-10-20 2005-05-24 Wafermasters, Inc. Integrated ashing and implant annealing method
WO2005055305A1 (en) * 2003-12-04 2005-06-16 Tokyo Electron Limited Method of cleaning semiconductor substrate conductive layer surface
JP2006013190A (en) 2004-06-28 2006-01-12 Rohm Co Ltd Method of manufacturing semiconductor device
JP4588391B2 (en) * 2004-09-01 2010-12-01 芝浦メカトロニクス株式会社 Ashing method and an ashing apparatus
US7491647B2 (en) 2005-03-08 2009-02-17 Lam Research Corporation Etch with striation control
US7241683B2 (en) 2005-03-08 2007-07-10 Lam Research Corporation Stabilized photoresist structure for etching process
US7910489B2 (en) 2006-02-17 2011-03-22 Lam Research Corporation Infinitely selective photoresist mask etch
US7605063B2 (en) 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393092A (en) * 1982-03-12 1983-07-12 Motorola, Inc. Method for controlling the conductivity of polyimide films and improved devices utilizing the method
US5292370A (en) * 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
US5498312A (en) * 1993-05-27 1996-03-12 Robert Bosch Gmbh Method for anisotropic plasma etching of substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393092A (en) * 1982-03-12 1983-07-12 Motorola, Inc. Method for controlling the conductivity of polyimide films and improved devices utilizing the method
US5292370A (en) * 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
US5498312A (en) * 1993-05-27 1996-03-12 Robert Bosch Gmbh Method for anisotropic plasma etching of substrates

Also Published As

Publication number Publication date Type
WO2001029879A2 (en) 2001-04-26 application

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