JPS5449073A - Plasma processing unit - Google Patents

Plasma processing unit

Info

Publication number
JPS5449073A
JPS5449073A JP11596677A JP11596677A JPS5449073A JP S5449073 A JPS5449073 A JP S5449073A JP 11596677 A JP11596677 A JP 11596677A JP 11596677 A JP11596677 A JP 11596677A JP S5449073 A JPS5449073 A JP S5449073A
Authority
JP
Japan
Prior art keywords
plasma
working chamber
shielding
paths
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11596677A
Other languages
Japanese (ja)
Inventor
Tsuneo Yoshida
Takashi Itasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11596677A priority Critical patent/JPS5449073A/en
Publication of JPS5449073A publication Critical patent/JPS5449073A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent the polymerization and photodecomposition of a resist material, by dividing an unit into a plasma generating chamber and plasma working chamber and by providing a shielding material into the working chamber surrounding a processed material coated with a photoresist agent.
CONSTITUTION: Plasma generating chamber 11 and plasma working chamber 3 are separated each other, and shielding pipe 12 composed of highly pure Al, Al alloy, ceramic, and fluororesin is fitted to the inside wall of working chamber 3. Into this pipe 12, several substrates 1 of semiconductor wafer with photo resist films having pattern formed or hard mask plates as processed materials standing rack 2 are installed. Further, a couple of shielding lids 13 formed with shielding pipe 12 in one are provided at both the sides of substrate 1, and several paths 14 are made different in level which are provided to a couple of liks 13. As a result, although radicals generated by plasma reach substrate 1 through paths 14, ultraviolet rays and electron beams will not reach substrate 1 because of paths 14 different in level
COPYRIGHT: (C)1979,JPO&Japio
JP11596677A 1977-09-26 1977-09-26 Plasma processing unit Pending JPS5449073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11596677A JPS5449073A (en) 1977-09-26 1977-09-26 Plasma processing unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11596677A JPS5449073A (en) 1977-09-26 1977-09-26 Plasma processing unit

Publications (1)

Publication Number Publication Date
JPS5449073A true JPS5449073A (en) 1979-04-18

Family

ID=14675536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11596677A Pending JPS5449073A (en) 1977-09-26 1977-09-26 Plasma processing unit

Country Status (1)

Country Link
JP (1) JPS5449073A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776844A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Method and apparatus for processing microwave plasma
JPS57184224A (en) * 1981-05-08 1982-11-12 Fujitsu Ltd Microwave plasma treating method and its device
JPS5887825A (en) * 1981-11-20 1983-05-25 Fujitsu Ltd Microwave plasma treatment apparatus
JPH0831803A (en) * 1994-07-18 1996-02-02 Plasma Syst:Kk Plasma processing device
EP1655770A1 (en) * 2003-08-12 2006-05-10 Shibaura Mechatronics Corporation Plasma processing device and ashing method
JP2009016453A (en) * 2007-07-02 2009-01-22 Tokyo Electron Ltd Plasma processing device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5122373A (en) * 1974-08-16 1976-02-23 Int Purazuma Corp
JPS51110276A (en) * 1975-03-25 1976-09-29 Tokyo Shibaura Electric Co GASUETSU CHINGUSOCHI
JPS5211175A (en) * 1975-07-18 1977-01-27 Toshiba Corp Activated gas reacting apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5122373A (en) * 1974-08-16 1976-02-23 Int Purazuma Corp
JPS51110276A (en) * 1975-03-25 1976-09-29 Tokyo Shibaura Electric Co GASUETSU CHINGUSOCHI
JPS5211175A (en) * 1975-07-18 1977-01-27 Toshiba Corp Activated gas reacting apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776844A (en) * 1980-10-31 1982-05-14 Fujitsu Ltd Method and apparatus for processing microwave plasma
JPS57184224A (en) * 1981-05-08 1982-11-12 Fujitsu Ltd Microwave plasma treating method and its device
JPH0415613B2 (en) * 1981-05-08 1992-03-18 Fujitsu Ltd
JPS5887825A (en) * 1981-11-20 1983-05-25 Fujitsu Ltd Microwave plasma treatment apparatus
JPH0831803A (en) * 1994-07-18 1996-02-02 Plasma Syst:Kk Plasma processing device
EP1655770A1 (en) * 2003-08-12 2006-05-10 Shibaura Mechatronics Corporation Plasma processing device and ashing method
EP1655770A4 (en) * 2003-08-12 2009-01-14 Shibaura Mechatronics Corp Plasma processing device and ashing method
JP2009016453A (en) * 2007-07-02 2009-01-22 Tokyo Electron Ltd Plasma processing device

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