JPS5552224A - Sputter etching method - Google Patents

Sputter etching method

Info

Publication number
JPS5552224A
JPS5552224A JP12591178A JP12591178A JPS5552224A JP S5552224 A JPS5552224 A JP S5552224A JP 12591178 A JP12591178 A JP 12591178A JP 12591178 A JP12591178 A JP 12591178A JP S5552224 A JPS5552224 A JP S5552224A
Authority
JP
Japan
Prior art keywords
etching
reaction
dark space
sheltering plate
specimen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12591178A
Other languages
Japanese (ja)
Inventor
Koichi Kobayashi
Tetsuya Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12591178A priority Critical patent/JPS5552224A/en
Publication of JPS5552224A publication Critical patent/JPS5552224A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To prevent occurrence of etching error by executing start and stop of etching by a reaction-sheltering plate provided in an electric discharge dark space, in a high-frequency sputter etching device in a reacting gas.
CONSTITUTION: By locating a reaction-sheltering plate 16 in a dark space 18 until a prescribed high-frequency output becomes stabilized, electric discharge is conducted between a cathode 12 and an anode 13 loaded with a specimen 14 to be etched. After the output has been stabilized, the reaction-sheltering plate 16 is kept away from the cathode 12, and the dark space 18 is shifted onto top surface of the specimen 14 so that the specimene is etched. And then, by returning the reaction-sheltering plate 16 to its initial position, etching is stopped. As it is possible, by doing this to give a high-frequency output in a constant condition throughout the etching period, occurrence of error in the etching amount can be prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP12591178A 1978-10-13 1978-10-13 Sputter etching method Pending JPS5552224A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12591178A JPS5552224A (en) 1978-10-13 1978-10-13 Sputter etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12591178A JPS5552224A (en) 1978-10-13 1978-10-13 Sputter etching method

Publications (1)

Publication Number Publication Date
JPS5552224A true JPS5552224A (en) 1980-04-16

Family

ID=14921957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12591178A Pending JPS5552224A (en) 1978-10-13 1978-10-13 Sputter etching method

Country Status (1)

Country Link
JP (1) JPS5552224A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715424A (en) * 1980-07-01 1982-01-26 Matsushita Electric Ind Co Ltd Dry etching method
JPS59171122A (en) * 1983-03-18 1984-09-27 Hitachi Ltd Dryetching method
JPS6074436A (en) * 1984-09-11 1985-04-26 Ulvac Corp Sputter etching device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109183A (en) * 1974-02-07 1975-08-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109183A (en) * 1974-02-07 1975-08-28

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715424A (en) * 1980-07-01 1982-01-26 Matsushita Electric Ind Co Ltd Dry etching method
JPS59171122A (en) * 1983-03-18 1984-09-27 Hitachi Ltd Dryetching method
JPS6074436A (en) * 1984-09-11 1985-04-26 Ulvac Corp Sputter etching device

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