JPS5531639A - Forming method for electric wiring - Google Patents

Forming method for electric wiring

Info

Publication number
JPS5531639A
JPS5531639A JP10435378A JP10435378A JPS5531639A JP S5531639 A JPS5531639 A JP S5531639A JP 10435378 A JP10435378 A JP 10435378A JP 10435378 A JP10435378 A JP 10435378A JP S5531639 A JPS5531639 A JP S5531639A
Authority
JP
Japan
Prior art keywords
etching
time
current
output
over
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10435378A
Other languages
Japanese (ja)
Other versions
JPH0127572B2 (en
Inventor
Kunihiko Kanda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP10435378A priority Critical patent/JPS5531639A/en
Publication of JPS5531639A publication Critical patent/JPS5531639A/en
Publication of JPH0127572B2 publication Critical patent/JPH0127572B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To facilitate high quality of etching homogeneously by deciding over- etching time from the thickness of electric conductive layer adhered on the substrate and the time unitl electric current flowing between two electrodes arrives at a settled current.
CONSTITUTION: When a wafer 2 has been put into an etching reservoir 1, a starting switch 17 is depressed, a timer 11 operates, at the same time, electrolytic etching current is amplified by an amplifier 10, which is sent to a processer 15, and compared with a value of a reference current setting circuit 13. When the etching current has been lessened smaller than the value of the reference current setting circuit 13. When the etching current the has been lessenes smaller than the valve of reference current setting circuit 13, the processor 15 calculates out etching extent per unitary time from output T of the timer 11 at that time and output of an initial thickness setting switch 12, the over-etching time T' is calculated out from said amount and output of an over-etching membrane thickness setting switch 14. And, the processer 15 displays that when the output of the timer 11 has become the value from the addition of said times T and T', the etching is over by setting a display unit ON.
COPYRIGHT: (C)1980,JPO&Japio
JP10435378A 1978-08-29 1978-08-29 Forming method for electric wiring Granted JPS5531639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10435378A JPS5531639A (en) 1978-08-29 1978-08-29 Forming method for electric wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10435378A JPS5531639A (en) 1978-08-29 1978-08-29 Forming method for electric wiring

Publications (2)

Publication Number Publication Date
JPS5531639A true JPS5531639A (en) 1980-03-06
JPH0127572B2 JPH0127572B2 (en) 1989-05-30

Family

ID=14378507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10435378A Granted JPS5531639A (en) 1978-08-29 1978-08-29 Forming method for electric wiring

Country Status (1)

Country Link
JP (1) JPS5531639A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141531A (en) * 1982-02-18 1983-08-22 Toshiba Corp Semiconductor element metal thin film etching apparatus
US4621037A (en) * 1984-07-09 1986-11-04 Sigma Corporation Method for detecting endpoint of development
US4755442A (en) * 1985-08-19 1988-07-05 Kabushiki Kaisha Toshiba Pattern developing process and apparatus therefor
US6378199B1 (en) 1994-05-13 2002-04-30 Dai Nippon Printing Co., Ltd. Multi-layer printed-wiring board process for producing
JP2011222790A (en) * 2010-04-12 2011-11-04 Fuji Electric Co Ltd Method and apparatus for manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5387667A (en) * 1977-01-12 1978-08-02 Hitachi Ltd Detecting method for etching end point of non-conductive film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5387667A (en) * 1977-01-12 1978-08-02 Hitachi Ltd Detecting method for etching end point of non-conductive film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141531A (en) * 1982-02-18 1983-08-22 Toshiba Corp Semiconductor element metal thin film etching apparatus
JPH0316776B2 (en) * 1982-02-18 1991-03-06 Tokyo Shibaura Electric Co
US4621037A (en) * 1984-07-09 1986-11-04 Sigma Corporation Method for detecting endpoint of development
US4755442A (en) * 1985-08-19 1988-07-05 Kabushiki Kaisha Toshiba Pattern developing process and apparatus therefor
US6378199B1 (en) 1994-05-13 2002-04-30 Dai Nippon Printing Co., Ltd. Multi-layer printed-wiring board process for producing
JP2011222790A (en) * 2010-04-12 2011-11-04 Fuji Electric Co Ltd Method and apparatus for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0127572B2 (en) 1989-05-30

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