JPS5294772A - Impurity diffusion method - Google Patents
Impurity diffusion methodInfo
- Publication number
- JPS5294772A JPS5294772A JP1168676A JP1168676A JPS5294772A JP S5294772 A JPS5294772 A JP S5294772A JP 1168676 A JP1168676 A JP 1168676A JP 1168676 A JP1168676 A JP 1168676A JP S5294772 A JPS5294772 A JP S5294772A
- Authority
- JP
- Japan
- Prior art keywords
- impurity diffusion
- temperature
- diffusion method
- furnace core
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: The temperature of furnace core tube is increased more than 1000°C before and after diffusion in order to convert unanalyzed material attached to the tube wall into stabilized material. Then, the temperature is lowered under 1000°C to perform diffusion by sending reaction gas into the furnace core tube housing semiconductor substrate. In this way, the dispersion of impurity concentration can be reduced.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1168676A JPS5294772A (en) | 1976-02-04 | 1976-02-04 | Impurity diffusion method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1168676A JPS5294772A (en) | 1976-02-04 | 1976-02-04 | Impurity diffusion method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5294772A true JPS5294772A (en) | 1977-08-09 |
Family
ID=11784888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1168676A Pending JPS5294772A (en) | 1976-02-04 | 1976-02-04 | Impurity diffusion method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5294772A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS499584A (en) * | 1972-03-29 | 1974-01-28 |
-
1976
- 1976-02-04 JP JP1168676A patent/JPS5294772A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS499584A (en) * | 1972-03-29 | 1974-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54104770A (en) | Heat treatment method for 3-5 group compound semiconductor | |
JPS5294772A (en) | Impurity diffusion method | |
JPS5329670A (en) | Thermal oxidation method of semiconductors | |
JPS5423379A (en) | Formation of insulating film on semiconductor surface | |
JPS5258360A (en) | Production of semiconductor device | |
JPS5365659A (en) | Semiconductor heat diffusion device | |
JPS52155969A (en) | Reduced pressure heat treatment furnace of semiconductor wafers | |
JPS5248978A (en) | Process for production of semiconductor device | |
JPS5227354A (en) | Impurity diffusion method for iii-v group compound semiconductor region | |
JPS5247396A (en) | Chemical compound super-conduction wire | |
JPS51111390A (en) | Organic elemental analyser | |
JPS52122479A (en) | Etching solution of silicon | |
JPS5343479A (en) | Thermal oxidation method of semiconductor wafers | |
JPS5216989A (en) | Process of semiconductor thin film | |
JPS54125549A (en) | Production method for sheath heater | |
JPS5551295A (en) | Energy concentration method | |
JPS53148277A (en) | Controlling method of goping gas in vapor phase growth of semiconductor | |
JPS5544791A (en) | Diffusing method for impurity to 3-5 compound | |
JPS5349943A (en) | Impurity diffusion method | |
JPS5478658A (en) | Impurity diffusion method | |
JPS51148689A (en) | Method for production of hydrogen and oxygen | |
JPS5267259A (en) | Preparation of iii-v group compounds semiconductor epitaxial laminatio n crystal | |
JPS51126037A (en) | Semiconductor crystal growth method | |
JPS5354972A (en) | Production of semiconductor device | |
JPS53114743A (en) | Etching method |