JPS5294772A - Impurity diffusion method - Google Patents

Impurity diffusion method

Info

Publication number
JPS5294772A
JPS5294772A JP1168676A JP1168676A JPS5294772A JP S5294772 A JPS5294772 A JP S5294772A JP 1168676 A JP1168676 A JP 1168676A JP 1168676 A JP1168676 A JP 1168676A JP S5294772 A JPS5294772 A JP S5294772A
Authority
JP
Japan
Prior art keywords
impurity diffusion
temperature
diffusion method
furnace core
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1168676A
Other languages
Japanese (ja)
Inventor
Toshio Tanaka
Kenji Hirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP1168676A priority Critical patent/JPS5294772A/en
Publication of JPS5294772A publication Critical patent/JPS5294772A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: The temperature of furnace core tube is increased more than 1000°C before and after diffusion in order to convert unanalyzed material attached to the tube wall into stabilized material. Then, the temperature is lowered under 1000°C to perform diffusion by sending reaction gas into the furnace core tube housing semiconductor substrate. In this way, the dispersion of impurity concentration can be reduced.
COPYRIGHT: (C)1977,JPO&Japio
JP1168676A 1976-02-04 1976-02-04 Impurity diffusion method Pending JPS5294772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1168676A JPS5294772A (en) 1976-02-04 1976-02-04 Impurity diffusion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1168676A JPS5294772A (en) 1976-02-04 1976-02-04 Impurity diffusion method

Publications (1)

Publication Number Publication Date
JPS5294772A true JPS5294772A (en) 1977-08-09

Family

ID=11784888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1168676A Pending JPS5294772A (en) 1976-02-04 1976-02-04 Impurity diffusion method

Country Status (1)

Country Link
JP (1) JPS5294772A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS499584A (en) * 1972-03-29 1974-01-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS499584A (en) * 1972-03-29 1974-01-28

Similar Documents

Publication Publication Date Title
JPS54104770A (en) Heat treatment method for 3-5 group compound semiconductor
JPS5294772A (en) Impurity diffusion method
JPS5329670A (en) Thermal oxidation method of semiconductors
JPS5423379A (en) Formation of insulating film on semiconductor surface
JPS5258360A (en) Production of semiconductor device
JPS5365659A (en) Semiconductor heat diffusion device
JPS52155969A (en) Reduced pressure heat treatment furnace of semiconductor wafers
JPS5248978A (en) Process for production of semiconductor device
JPS5227354A (en) Impurity diffusion method for iii-v group compound semiconductor region
JPS5247396A (en) Chemical compound super-conduction wire
JPS51111390A (en) Organic elemental analyser
JPS52122479A (en) Etching solution of silicon
JPS5343479A (en) Thermal oxidation method of semiconductor wafers
JPS5216989A (en) Process of semiconductor thin film
JPS54125549A (en) Production method for sheath heater
JPS5551295A (en) Energy concentration method
JPS53148277A (en) Controlling method of goping gas in vapor phase growth of semiconductor
JPS5544791A (en) Diffusing method for impurity to 3-5 compound
JPS5349943A (en) Impurity diffusion method
JPS5478658A (en) Impurity diffusion method
JPS51148689A (en) Method for production of hydrogen and oxygen
JPS5267259A (en) Preparation of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS51126037A (en) Semiconductor crystal growth method
JPS5354972A (en) Production of semiconductor device
JPS53114743A (en) Etching method