JPS5791520A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5791520A
JPS5791520A JP16747680A JP16747680A JPS5791520A JP S5791520 A JPS5791520 A JP S5791520A JP 16747680 A JP16747680 A JP 16747680A JP 16747680 A JP16747680 A JP 16747680A JP S5791520 A JPS5791520 A JP S5791520A
Authority
JP
Japan
Prior art keywords
exhaust
reaction tube
wafer
dust
yield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16747680A
Other languages
Japanese (ja)
Inventor
Fuki Takemata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16747680A priority Critical patent/JPS5791520A/en
Publication of JPS5791520A publication Critical patent/JPS5791520A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To improve the yield of products by providing an exhaust unit at the contact with a reaction tube of a stage inserted into the reaction tube of a semiconductor manufacturing apparatus, thereby preventing the adherence of dust. CONSTITUTION:An exhaust unit 11 (exhaust hole 13) is provided at a stage 7 placing a holder 6 for carrying a wafer 5 to be treated to be telescoped within a reaction tube 1 connected to a vacuum pump 4 via an exhaust tube 2, and is connected to an exhaust system 12 connected to a vacuum pump 3. In this manner, it can prevent the dust from adhering to a wafer, thereby improving the yield of the product.
JP16747680A 1980-11-28 1980-11-28 Manufacture of semiconductor device Pending JPS5791520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16747680A JPS5791520A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16747680A JPS5791520A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5791520A true JPS5791520A (en) 1982-06-07

Family

ID=15850379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16747680A Pending JPS5791520A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5791520A (en)

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