JPS57201016A - Cleaning method for semiconductor manufacturing apparatus - Google Patents
Cleaning method for semiconductor manufacturing apparatusInfo
- Publication number
- JPS57201016A JPS57201016A JP8564481A JP8564481A JPS57201016A JP S57201016 A JPS57201016 A JP S57201016A JP 8564481 A JP8564481 A JP 8564481A JP 8564481 A JP8564481 A JP 8564481A JP S57201016 A JPS57201016 A JP S57201016A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- furnace
- plasma
- electrodes
- manufacturing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To sublime and remove a solid accumulated material by generating a plasma in a furnace. CONSTITUTION:Remaining gas in a reaction furnace 1 is exhausted by a vacuum pump 14, cleaning gas 11 is led from a gas flow inlet tube 5 into the furnace 1 to maintain vacuum state. Then, high frequency electric field is applied to the electrodes 12, 13 to generate a plasma between the electrodes 12 and 13, thereby simultaneously subliming and removing the solid accumulated material remaining in the furnace and tube system. In case that the accumulated material is silicon or silicon compound, Freon gas (CF4) is used as a cleaning gas, and when the material is organic material, oxygen gas (O2) is used as the cleaning gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8564481A JPS57201016A (en) | 1981-06-05 | 1981-06-05 | Cleaning method for semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8564481A JPS57201016A (en) | 1981-06-05 | 1981-06-05 | Cleaning method for semiconductor manufacturing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57201016A true JPS57201016A (en) | 1982-12-09 |
Family
ID=13864524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8564481A Pending JPS57201016A (en) | 1981-06-05 | 1981-06-05 | Cleaning method for semiconductor manufacturing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57201016A (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6061722U (en) * | 1983-09-30 | 1985-04-30 | 株式会社島津製作所 | Film forming equipment |
EP0171241A2 (en) * | 1984-07-30 | 1986-02-12 | Unisys Corporation | Method of depositing silicon films with reduced structural defects |
JPS61250185A (en) * | 1985-04-25 | 1986-11-07 | Anelva Corp | Cleaning method for vacuum treatment device |
EP0296891A2 (en) * | 1987-06-26 | 1988-12-28 | Applied Materials, Inc. | Process for self-cleaning of a reactor chamber |
JPH053162A (en) * | 1991-10-22 | 1993-01-08 | Nec Corp | Vapor epitaxial growth device |
US5356478A (en) * | 1992-06-22 | 1994-10-18 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma treatment chamber |
US5647953A (en) * | 1995-12-22 | 1997-07-15 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma process chamber |
US6071573A (en) * | 1997-12-30 | 2000-06-06 | Lam Research Corporation | Process for precoating plasma CVD reactors |
US6174499B1 (en) | 1996-03-18 | 2001-01-16 | Nec Corporation | Method and apparatus for treatment of freon gas |
US6350697B1 (en) | 1999-12-22 | 2002-02-26 | Lam Research Corporation | Method of cleaning and conditioning plasma reaction chamber |
KR100320788B1 (en) * | 1995-10-15 | 2002-06-22 | 순페이 야마자끼 | Laser irradiation method and semiconductor device manufacturing method |
US6626185B2 (en) | 1996-06-28 | 2003-09-30 | Lam Research Corporation | Method of depositing a silicon containing layer on a semiconductor substrate |
US6770214B2 (en) | 2001-03-30 | 2004-08-03 | Lam Research Corporation | Method of reducing aluminum fluoride deposits in plasma etch reactor |
CN108728901A (en) * | 2018-06-15 | 2018-11-02 | 常州亿晶光电科技有限公司 | A kind of maintenance method of diffusion furnace tube |
-
1981
- 1981-06-05 JP JP8564481A patent/JPS57201016A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6061722U (en) * | 1983-09-30 | 1985-04-30 | 株式会社島津製作所 | Film forming equipment |
EP0171241A2 (en) * | 1984-07-30 | 1986-02-12 | Unisys Corporation | Method of depositing silicon films with reduced structural defects |
JPS61250185A (en) * | 1985-04-25 | 1986-11-07 | Anelva Corp | Cleaning method for vacuum treatment device |
EP0296891A2 (en) * | 1987-06-26 | 1988-12-28 | Applied Materials, Inc. | Process for self-cleaning of a reactor chamber |
JPH053162A (en) * | 1991-10-22 | 1993-01-08 | Nec Corp | Vapor epitaxial growth device |
US5356478A (en) * | 1992-06-22 | 1994-10-18 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma treatment chamber |
KR100320788B1 (en) * | 1995-10-15 | 2002-06-22 | 순페이 야마자끼 | Laser irradiation method and semiconductor device manufacturing method |
US5647953A (en) * | 1995-12-22 | 1997-07-15 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma process chamber |
US6174499B1 (en) | 1996-03-18 | 2001-01-16 | Nec Corporation | Method and apparatus for treatment of freon gas |
US6626185B2 (en) | 1996-06-28 | 2003-09-30 | Lam Research Corporation | Method of depositing a silicon containing layer on a semiconductor substrate |
US6071573A (en) * | 1997-12-30 | 2000-06-06 | Lam Research Corporation | Process for precoating plasma CVD reactors |
US6350697B1 (en) | 1999-12-22 | 2002-02-26 | Lam Research Corporation | Method of cleaning and conditioning plasma reaction chamber |
US6770214B2 (en) | 2001-03-30 | 2004-08-03 | Lam Research Corporation | Method of reducing aluminum fluoride deposits in plasma etch reactor |
CN108728901A (en) * | 2018-06-15 | 2018-11-02 | 常州亿晶光电科技有限公司 | A kind of maintenance method of diffusion furnace tube |
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