JPS57201016A - Cleaning method for semiconductor manufacturing apparatus - Google Patents

Cleaning method for semiconductor manufacturing apparatus

Info

Publication number
JPS57201016A
JPS57201016A JP8564481A JP8564481A JPS57201016A JP S57201016 A JPS57201016 A JP S57201016A JP 8564481 A JP8564481 A JP 8564481A JP 8564481 A JP8564481 A JP 8564481A JP S57201016 A JPS57201016 A JP S57201016A
Authority
JP
Japan
Prior art keywords
gas
furnace
plasma
electrodes
manufacturing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8564481A
Other languages
Japanese (ja)
Inventor
Kenji Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP8564481A priority Critical patent/JPS57201016A/en
Publication of JPS57201016A publication Critical patent/JPS57201016A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To sublime and remove a solid accumulated material by generating a plasma in a furnace. CONSTITUTION:Remaining gas in a reaction furnace 1 is exhausted by a vacuum pump 14, cleaning gas 11 is led from a gas flow inlet tube 5 into the furnace 1 to maintain vacuum state. Then, high frequency electric field is applied to the electrodes 12, 13 to generate a plasma between the electrodes 12 and 13, thereby simultaneously subliming and removing the solid accumulated material remaining in the furnace and tube system. In case that the accumulated material is silicon or silicon compound, Freon gas (CF4) is used as a cleaning gas, and when the material is organic material, oxygen gas (O2) is used as the cleaning gas.
JP8564481A 1981-06-05 1981-06-05 Cleaning method for semiconductor manufacturing apparatus Pending JPS57201016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8564481A JPS57201016A (en) 1981-06-05 1981-06-05 Cleaning method for semiconductor manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8564481A JPS57201016A (en) 1981-06-05 1981-06-05 Cleaning method for semiconductor manufacturing apparatus

Publications (1)

Publication Number Publication Date
JPS57201016A true JPS57201016A (en) 1982-12-09

Family

ID=13864524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8564481A Pending JPS57201016A (en) 1981-06-05 1981-06-05 Cleaning method for semiconductor manufacturing apparatus

Country Status (1)

Country Link
JP (1) JPS57201016A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061722U (en) * 1983-09-30 1985-04-30 株式会社島津製作所 Film forming equipment
EP0171241A2 (en) * 1984-07-30 1986-02-12 Unisys Corporation Method of depositing silicon films with reduced structural defects
JPS61250185A (en) * 1985-04-25 1986-11-07 Anelva Corp Cleaning method for vacuum treatment device
EP0296891A2 (en) * 1987-06-26 1988-12-28 Applied Materials, Inc. Process for self-cleaning of a reactor chamber
JPH053162A (en) * 1991-10-22 1993-01-08 Nec Corp Vapor epitaxial growth device
US5356478A (en) * 1992-06-22 1994-10-18 Lam Research Corporation Plasma cleaning method for removing residues in a plasma treatment chamber
US5647953A (en) * 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber
US6071573A (en) * 1997-12-30 2000-06-06 Lam Research Corporation Process for precoating plasma CVD reactors
US6174499B1 (en) 1996-03-18 2001-01-16 Nec Corporation Method and apparatus for treatment of freon gas
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
KR100320788B1 (en) * 1995-10-15 2002-06-22 순페이 야마자끼 Laser irradiation method and semiconductor device manufacturing method
US6626185B2 (en) 1996-06-28 2003-09-30 Lam Research Corporation Method of depositing a silicon containing layer on a semiconductor substrate
US6770214B2 (en) 2001-03-30 2004-08-03 Lam Research Corporation Method of reducing aluminum fluoride deposits in plasma etch reactor
CN108728901A (en) * 2018-06-15 2018-11-02 常州亿晶光电科技有限公司 A kind of maintenance method of diffusion furnace tube

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061722U (en) * 1983-09-30 1985-04-30 株式会社島津製作所 Film forming equipment
EP0171241A2 (en) * 1984-07-30 1986-02-12 Unisys Corporation Method of depositing silicon films with reduced structural defects
JPS61250185A (en) * 1985-04-25 1986-11-07 Anelva Corp Cleaning method for vacuum treatment device
EP0296891A2 (en) * 1987-06-26 1988-12-28 Applied Materials, Inc. Process for self-cleaning of a reactor chamber
JPH053162A (en) * 1991-10-22 1993-01-08 Nec Corp Vapor epitaxial growth device
US5356478A (en) * 1992-06-22 1994-10-18 Lam Research Corporation Plasma cleaning method for removing residues in a plasma treatment chamber
KR100320788B1 (en) * 1995-10-15 2002-06-22 순페이 야마자끼 Laser irradiation method and semiconductor device manufacturing method
US5647953A (en) * 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber
US6174499B1 (en) 1996-03-18 2001-01-16 Nec Corporation Method and apparatus for treatment of freon gas
US6626185B2 (en) 1996-06-28 2003-09-30 Lam Research Corporation Method of depositing a silicon containing layer on a semiconductor substrate
US6071573A (en) * 1997-12-30 2000-06-06 Lam Research Corporation Process for precoating plasma CVD reactors
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
US6770214B2 (en) 2001-03-30 2004-08-03 Lam Research Corporation Method of reducing aluminum fluoride deposits in plasma etch reactor
CN108728901A (en) * 2018-06-15 2018-11-02 常州亿晶光电科技有限公司 A kind of maintenance method of diffusion furnace tube

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