JPS5799333A - Micro wave plasma treatment method - Google Patents

Micro wave plasma treatment method

Info

Publication number
JPS5799333A
JPS5799333A JP17267980A JP17267980A JPS5799333A JP S5799333 A JPS5799333 A JP S5799333A JP 17267980 A JP17267980 A JP 17267980A JP 17267980 A JP17267980 A JP 17267980A JP S5799333 A JPS5799333 A JP S5799333A
Authority
JP
Japan
Prior art keywords
plasma gas
micro wave
test sample
wave plasma
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17267980A
Other languages
Japanese (ja)
Other versions
JPS5943217B2 (en
Inventor
Hiroshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17267980A priority Critical patent/JPS5943217B2/en
Publication of JPS5799333A publication Critical patent/JPS5799333A/en
Publication of JPS5943217B2 publication Critical patent/JPS5943217B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the deposition of solid impurity particles accompanying a plasma gas on the surface of a test sample by directing the flow of the plasma gas introduced from the lower part of the test sample toward the upper part of the test sample.
CONSTITUTION: A micro wave plasma gas introduced into a plasma-generating chamber 2 is sent through a flow path 4 into a plasma reaction chamber 3 and flowed from below toward above a test sample 5 in order to etch the sample 5. Thus, the deposition of solid impurity particles, e.g., silicone oxide, etc., accompanying the plasma gas on the upside of the sample 5 can be prevented. The micro wave plasma gas used is CF4 gas of 0.5 Torr, excited by a frequency of 2.45GHz and an output of 1kW, for example.
COPYRIGHT: (C)1982,JPO&Japio
JP17267980A 1980-12-09 1980-12-09 Microwave plasma treatment method Expired JPS5943217B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17267980A JPS5943217B2 (en) 1980-12-09 1980-12-09 Microwave plasma treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17267980A JPS5943217B2 (en) 1980-12-09 1980-12-09 Microwave plasma treatment method

Publications (2)

Publication Number Publication Date
JPS5799333A true JPS5799333A (en) 1982-06-21
JPS5943217B2 JPS5943217B2 (en) 1984-10-20

Family

ID=15946349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17267980A Expired JPS5943217B2 (en) 1980-12-09 1980-12-09 Microwave plasma treatment method

Country Status (1)

Country Link
JP (1) JPS5943217B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0138679Y2 (en) * 1985-04-05 1989-11-20

Also Published As

Publication number Publication date
JPS5943217B2 (en) 1984-10-20

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