JPS6061722U - Film forming equipment - Google Patents

Film forming equipment

Info

Publication number
JPS6061722U
JPS6061722U JP15322483U JP15322483U JPS6061722U JP S6061722 U JPS6061722 U JP S6061722U JP 15322483 U JP15322483 U JP 15322483U JP 15322483 U JP15322483 U JP 15322483U JP S6061722 U JPS6061722 U JP S6061722U
Authority
JP
Japan
Prior art keywords
film forming
forming apparatus
gas
gas inlet
forming equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15322483U
Other languages
Japanese (ja)
Inventor
小山　富太郎
佐野　久義
Original Assignee
株式会社島津製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社島津製作所 filed Critical 株式会社島津製作所
Priority to JP15322483U priority Critical patent/JPS6061722U/en
Publication of JPS6061722U publication Critical patent/JPS6061722U/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの考案に係る成膜装置の一実施例の構成を略
示した説明図である。 １・・・・・・真空室、２・・・・・・ヒータ、３・・
・・・・基板、４・・・・・・電極、５・・・・・・気
体導入口、６ａ・・・・・・ニードルバルブ、６ｂ・・
・・・・バルブ、９・・・・・・掃除用ガス排出。 口、１０・・・・・・真空排気口、１３・・・・・・ガ
スの切り換え機構。FIG. 1 is an explanatory diagram schematically showing the structure of an embodiment of a film forming apparatus according to this invention. 1...Vacuum chamber, 2...Heater, 3...
...Substrate, 4...Electrode, 5...Gas inlet, 6a...Needle valve, 6b...
...Valve, 9...Cleaning gas discharge. Port, 10... Vacuum exhaust port, 13... Gas switching mechanism.

Claims (3)

【実用新案登録請求の範囲】[Scope of utility model registration request] （１）ガス導入口を開口した電極を備えた成膜装置にお
いて、前記ガス導入口に連通ずる配管を二股に分岐し−
の配管にはニードルバルブを介して原料ガスを導入せし
め他の配管にはバルブを介して掃除用ガスを導入せしめ
得る切り換え機構を設けることにより、前記ガス導入口
から原料ガス及び掃除用ガスを選択的に真空室内に導入
する如く構成したことを特徴とする成膜装置。(1) In a film forming apparatus equipped with an electrode with a gas inlet opened, the piping communicating with the gas inlet is branched into two.
The source gas and the cleaning gas are selected from the gas inlet by providing a switching mechanism that allows the raw material gas to be introduced into the pipe through a needle valve and the cleaning gas to be introduced through the valve into the other pipe. A film forming apparatus characterized in that it is configured to be introduced into a vacuum chamber. （２）前記成膜装置はプラズマＣＶＤ装置であるこ、　
　とを特徴とする実用新案登録請求の範囲第１項記載の
成膜装置。(2) the film forming apparatus is a plasma CVD apparatus;
A film forming apparatus according to claim 1, characterized in that: （３）前記成膜装置はスパッタリング装置であることを
特徴とする実用新案登録請求の範囲第１項記載の成膜装
置。(3) The film forming apparatus according to claim 1, wherein the film forming apparatus is a sputtering apparatus.
JP15322483U 1983-09-30 1983-09-30 Film forming equipment Pending JPS6061722U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15322483U JPS6061722U (en) 1983-09-30 1983-09-30 Film forming equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15322483U JPS6061722U (en) 1983-09-30 1983-09-30 Film forming equipment

Publications (1)

Publication Number Publication Date
JPS6061722U true JPS6061722U (en) 1985-04-30

Family

ID=30339057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15322483U Pending JPS6061722U (en) 1983-09-30 1983-09-30 Film forming equipment

Country Status (1)

Country Link
JP (1) JPS6061722U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6487773A (en) * 1987-06-26 1989-03-31 Applied Materials Inc Self-cleaning method of reactor chamber
JPH03261131A (en) * 1990-03-12 1991-11-21 Ngk Insulators Ltd Wafer heater for semiconductor manufacturing device
JP2016197652A (en) * 2015-04-03 2016-11-24 株式会社島津製作所 Process processing apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681929A (en) * 1979-12-10 1981-07-04 Hitachi Ltd Plasma processing device
JPS56158143A (en) * 1980-05-12 1981-12-05 Mitsubishi Electric Corp Reduced pressure type vapor phase growing device
JPS57201016A (en) * 1981-06-05 1982-12-09 Oki Electric Ind Co Ltd Cleaning method for semiconductor manufacturing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681929A (en) * 1979-12-10 1981-07-04 Hitachi Ltd Plasma processing device
JPS56158143A (en) * 1980-05-12 1981-12-05 Mitsubishi Electric Corp Reduced pressure type vapor phase growing device
JPS57201016A (en) * 1981-06-05 1982-12-09 Oki Electric Ind Co Ltd Cleaning method for semiconductor manufacturing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6487773A (en) * 1987-06-26 1989-03-31 Applied Materials Inc Self-cleaning method of reactor chamber
JPH03261131A (en) * 1990-03-12 1991-11-21 Ngk Insulators Ltd Wafer heater for semiconductor manufacturing device
JP2016197652A (en) * 2015-04-03 2016-11-24 株式会社島津製作所 Process processing apparatus

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