JPS58161634U

JPS58161634U - Reactive ion plating equipment

Info

Publication number: JPS58161634U
Application number: JP5811582U
Authority: JP
Inventors: 野口　今朝男
Original assignee: 日本電気株式会社
Priority date: 1982-04-21
Filing date: 1982-04-21
Publication date: 1983-10-27

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

第１図は従来の反応性イオンブレーティング装置を説明
するための模式図であり、ａ図は操作ガス圧が１０−５
〜１０　　’Ｔｏｒｒ程度を用イル装置、ｂ図は操作ガ
ス圧が１０−４〜１Ｏ−２ＴＯｒｒ程度を用い、蒸発源
に電子銃加熱方式を用いる装置である。１１１．１２１は真空チャンバー、１１２゜１２２は蒸
発源、１１３，１２３はイオン化器、１１４．１２４は
基板ホルダー、１１５，１２５はガス導入口、１１６，
１２６は真空排気口、１１７．１２７は反応したガスの
流れ、１１８゜１２８は排気ガスの流れ、１２９は差動
排気弁、１００は膜形成室、１２０は電子銃作動室、で
ある。第２図、第３図は本考案を実施した反応性イ１ンプレー
テイング装置の１例を説明するための模式図である。２
１．３１は真空チャンバー、２２゜３２は蒸発源、２３
．３３はイオン化器、２４゜３４は基板ホルダー、２５
．３５は反応ガス導入口、２６．３６，３２６は真空排
気口、２７゜３７は反応したガスの流れ、２Ｂ、３８．
３９は真空排気ガスの流れ、３１０は膜形成室、３２０
は電子銃作動室、３２９は差動排気弁、３０は反応ガス
放出管である。Figure 1 is a schematic diagram for explaining a conventional reactive ion blating device, and Figure a shows an operating gas pressure of 10-5.
Figure b shows an apparatus using an operating gas pressure of about 10-4 to 10-2 Torr and an electron gun heating method as the evaporation source. 111 and 121 are vacuum chambers, 112 and 122 are evaporation sources, 113 and 123 are ionizers, 114 and 124 are substrate holders, 115 and 125 are gas inlets, 116,
126 is a vacuum exhaust port, 117, 127 is a flow of reacted gas, 118.128 is a flow of exhaust gas, 129 is a differential exhaust valve, 100 is a film forming chamber, and 120 is an electron gun operating chamber. FIGS. 2 and 3 are schematic diagrams for explaining an example of a reactive implantation apparatus embodying the present invention. 2
1.31 is a vacuum chamber, 22°32 is an evaporation source, 23
．． 33 is an ionizer, 24° 34 is a substrate holder, 25
．． 35 is a reaction gas inlet, 26, 36, 326 is a vacuum exhaust port, 27°37 is a flow of reacted gas, 2B, 38.
39 is a flow of vacuum exhaust gas, 310 is a film forming chamber, 320
329 is a differential exhaust valve, and 30 is a reaction gas discharge tube.

Claims

[Scope of utility model registration request]

In the film forming chamber of the reactive ion blating device, a reactive gas inlet is provided on the evaporation source side, and a reactive gas exhaust port is provided on the substrate holder side, so that the flow direction of the reactive gas and vaporized raw material is directed from the evaporation source side to the substrate boulder. - A reactive ion blating device characterized by having a lateral vacuum chamber structure.