JPS5681929A - Plasma processing device - Google Patents

Plasma processing device

Info

Publication number
JPS5681929A
JPS5681929A JP15912279A JP15912279A JPS5681929A JP S5681929 A JPS5681929 A JP S5681929A JP 15912279 A JP15912279 A JP 15912279A JP 15912279 A JP15912279 A JP 15912279A JP S5681929 A JPS5681929 A JP S5681929A
Authority
JP
Japan
Prior art keywords
wafer
hole
processing device
plasma processing
underside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15912279A
Other languages
Japanese (ja)
Inventor
Hiroshi Yokoyama
Hiroto Nagatomo
Masakuni Akiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15912279A priority Critical patent/JPS5681929A/en
Publication of JPS5681929A publication Critical patent/JPS5681929A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To perform processing and machining to the whole surface by holding the underside peripheral edge of a sample by means of a slant plane of a supporting projection part alone. CONSTITUTION:A supporting plane 13 of a projection part 7 of a hole 5 installed at the upper electrode plate of a plasma device to hold a wafer 6 is inclined and the inclined angle is equal to the angle of a chamfering part 14 of the wafer. Accordingly, the wafer is positioned in the center of a hole and the maching of the whole area of the underside of the wafer required to be processed and machined can be performed.
JP15912279A 1979-12-10 1979-12-10 Plasma processing device Pending JPS5681929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15912279A JPS5681929A (en) 1979-12-10 1979-12-10 Plasma processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15912279A JPS5681929A (en) 1979-12-10 1979-12-10 Plasma processing device

Publications (1)

Publication Number Publication Date
JPS5681929A true JPS5681929A (en) 1981-07-04

Family

ID=15686709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15912279A Pending JPS5681929A (en) 1979-12-10 1979-12-10 Plasma processing device

Country Status (1)

Country Link
JP (1) JPS5681929A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061722U (en) * 1983-09-30 1985-04-30 株式会社島津製作所 Film forming equipment
JPH02105527A (en) * 1988-10-14 1990-04-18 Kawasaki Steel Corp Plasma cvd device
CN102013407A (en) * 2010-06-10 2011-04-13 常州天合光能有限公司 Film-coating hook and silicon wafer loader adopting same
DE102010052689A1 (en) * 2010-11-26 2012-05-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrate holder for the surface treatment of substrates and use of the substrate holder
CN109306471A (en) * 2017-07-28 2019-02-05 汉民科技股份有限公司 chemical vapor deposition system
JP2019119896A (en) * 2017-12-28 2019-07-22 トヨタ自動車株式会社 Plasma treatment apparatus
WO2020029482A1 (en) * 2018-08-06 2020-02-13 通威太阳能（合肥）有限公司 Correction apparatus and correction method for graphite frame

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061722U (en) * 1983-09-30 1985-04-30 株式会社島津製作所 Film forming equipment
JPH02105527A (en) * 1988-10-14 1990-04-18 Kawasaki Steel Corp Plasma cvd device
CN102013407A (en) * 2010-06-10 2011-04-13 常州天合光能有限公司 Film-coating hook and silicon wafer loader adopting same
DE102010052689A1 (en) * 2010-11-26 2012-05-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrate holder for the surface treatment of substrates and use of the substrate holder
CN109306471A (en) * 2017-07-28 2019-02-05 汉民科技股份有限公司 chemical vapor deposition system
JP2019119896A (en) * 2017-12-28 2019-07-22 トヨタ自動車株式会社 Plasma treatment apparatus
WO2020029482A1 (en) * 2018-08-06 2020-02-13 通威太阳能（合肥）有限公司 Correction apparatus and correction method for graphite frame

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