JP2019119896A - Plasma treatment apparatus - Google Patents

Abstract

To solve the problem that if a work deforms, voltage application becomes unstable as a plasma treatment is performed by applying a voltage to the work.SOLUTION: A plasma treatment apparatus comprises: a vacuum container having a first mold comprising a first hollow part where an upper surface-side processing object part of a work is arranged and a first peripheral edge part, and a second mold arranged opposite the first mold, and comprising a second hollow part where a lower surface-side processing object part is arranged and a second peripheral edge part; a support member having an opening part opened at the processing object part and a plane part defining the opening part, and arranged at least partially between the first peripheral edge part and second peripheral edge part, the support member coming into contact with a processing non-object part positioned at an outer periphery of the processing object part so as to support the work; and a voltage application part applying a voltage between the support member and vacuum container. At the plane part of the support member, a projection part is provided which has an inclined plane facing the first hollow part side.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a plasma processing apparatus for performing plasma processing on a conductive work.

  As an apparatus for performing plasma processing on a work, Patent Document 1 describes an apparatus for forming a film by generating a plasma in the chamber by holding the work by a chamber which is divided into upper and lower portions.

JP, 2009-62579, A

  The inventors have found that in plasma processing, the workpiece may be deformed due to the temperature difference between the central portion of the workpiece disposed in the chamber and the outer peripheral portion of the workpiece. In such a case, if plasma processing is performed by applying a voltage to the work, voltage application to the work may become unstable and the film formation density and etching density of the work may be reduced.

  The present disclosure has been made to solve the above-described problems, and can be implemented as the following modes.

According to one aspect of the present disclosure, a plasma processing apparatus is provided which performs plasma processing on a flat plate-like workpiece having conductivity. The plasma processing apparatus is a vacuum vessel, and is provided continuously from a first recess where the processing target portion on the upper surface side of the work is disposed, and the first recess outside the first recess. A first mold including a first peripheral edge portion; a second hollow portion disposed opposite to the first mold and in which the processing target portion on the lower surface side of the workpiece is arranged; A vacuum vessel having a second mold provided with a second peripheral portion continuously provided from the second hollow portion on the outer side of the hollow portion; an opening opening at the processing target portion; the opening A conductive support member having a flat portion defining a portion, at least a portion of which is disposed between the first peripheral portion and the second peripheral portion, the processing target portion of the workpiece A support member for supporting the work in contact with a non-processing target portion located on the outer periphery of the support A voltage application unit for applying a voltage between the support member and the vacuum vessel; and the flat portion is provided with a convex portion having an inclined surface facing the first hollow portion side. .
According to this embodiment, even when the workpiece is extended and deformed in the surface direction during plasma processing, the workpiece and the support member contact each other on the inclined surface of the support member, so that a voltage is applied to the workpiece through the support member can do. As a result, it is possible to suppress a decrease in film formation density or etching density when the work is deformed.

  The present disclosure can also be realized in various forms other than the above-described plasma processing apparatus. For example, it can be realized in the form of a method of performing plasma processing on a work.

BRIEF DESCRIPTION OF THE DRAWINGS The schematic sectional drawing which shows the structure of a plasma processing apparatus. The disassembled perspective view of a plasma processing apparatus. The expanded sectional view of a masking member. The top view which shows a mode that the workpiece | work was supported by the masking member. FIG. 7 is a process diagram showing a plasma processing method of a workpiece by the plasma processing apparatus. The figure for demonstrating a mode that a workpiece | work is supported by the masking member of this embodiment, and plasma processing is performed. FIG. 2 is a conceptual diagram for explaining the appearance of plasma generated in a vacuum vessel.

A. Embodiment A1. Apparatus Configuration FIG. 1 is a schematic cross-sectional view showing the configuration of a plasma processing apparatus 200. As shown in FIG. FIG. 2 is an exploded perspective view of the plasma processing apparatus 200. As shown in FIG. In FIGS. 1 and 2, XYZ axes substantially orthogonal to each other are shown. In addition, substantially orthogonal includes the range of 90 degrees +/- 20 degrees. In the present embodiment, the Y direction is a substantially vertical direction, and the X direction is a substantially horizontal direction. The Z direction is a direction perpendicular to the substantially vertical direction and the substantially horizontal direction. The same applies to the following figures.

  The plasma processing apparatus 200 is an apparatus for performing film formation or etching on a flat plate-like workpiece 10 having conductivity. In the present embodiment, the work 10 is a flat metal used as a base material of a separator of a fuel cell. The work 10 is formed into a shape shown in FIG. 2 by, for example, pressing titanium or a titanium alloy. The work 10 includes a processing target portion 10A that contributes to the power generation of the fuel cell, and a non-processing target portion 10B disposed around the processing target portion 10A. The non-processed target portion 10B is formed with a manifold hole h through which a reaction gas or cooling water flows. The plasma processing apparatus 200 forms a conductive carbon-based thin film on the processing target portion 10A by, for example, a plasma CVD method.

  The plasma processing apparatus 200 includes a vacuum vessel (chamber) 100, masking members 21 and 22, and a voltage application unit 70. The plasma processing apparatus 200 further includes the insulating member 30, the magnetic field forming units 41 and 42, the pallet 130, the sealing members 61 and 62, the opening / closing device 50, the transfer device 55, the gas supply device 80, and the exhaust device. 90 and a control unit 95. In FIG. 2, the opening / closing device 50, the transfer device 55, the voltage application unit 70 and its introduction unit 71, the gas supply device 80 and the supply port 81, the exhaust device 90 and the exhaust port 91, and the control unit 95 , Is not shown.

  The vacuum vessel 100 is a conductive vessel provided with a first mold 110 and a second mold 120 disposed opposite to each other. In the present embodiment, the vacuum vessel 100 is divided in the + Y direction and the −Y direction. The vacuum vessel 100 is formed of, for example, a metal such as stainless steel, aluminum, or titanium.

  The first mold 110 includes a first recess 114 in which the processing target portion 10A on the upper surface side of the work 10 is disposed, and a first recess 114 provided continuously from the first recess 114 outside the first recess 114. And a peripheral portion 111. In a state where the work 10 is disposed in the vacuum vessel 100, the first recess 114 is recessed in a direction away from the work 10, and in this embodiment, viewed from above the processing target portion 10A on the upper surface side of the work 10 ( Recessed in the + Y direction). Further, the first recess 114 includes a bottom 113 and a side 112 connecting the bottom 113 and the first peripheral edge 111. The first peripheral edge portion 111 faces the masking members 21 and 22 covering the non-processing target portion 10B in a separated state.

  The second mold 120 includes a second recess 124 in which the processing target portion 10A on the lower surface side of the work 10 is disposed, and a second recess 124 provided continuously from the second recess 124 on the outer side of the second recess 124. And a peripheral portion 121. In a state where the work 10 is disposed in the vacuum container 100, the second recess 124 is recessed downward (in the −Y direction) as viewed from the processing target portion 10A on the lower surface side of the work 10. The second recess 124 includes a bottom 123 and a side 122 connecting the bottom 123 and the second peripheral edge 121. The second peripheral edge 121 faces the masking member 22 covering the non-processing target portion 10B in a separated state. The second peripheral edge 121 is disposed at a portion corresponding to the first peripheral edge 111 of the first mold 110. In the present embodiment, the first peripheral edge 111 and the second peripheral edge 121 are parallel to the XZ plane.

  The first mold 110 and the second mold 120 have a supply port 81 for supplying a gas from the gas supply device 80 into the vacuum vessel 100 and an exhaust port 91 for exhausting the inside of the vacuum vessel 100 by the exhaust system 90. And. The supply port 81 and the exhaust port 91 are provided with valves that can be opened and closed. In addition, the second mold 120 includes an introduction unit 71 for applying a voltage between the workpiece 10 and the vacuum vessel 100 through the masking member 22. An insulating member 35 electrically insulates between the second mold 120 and the introduction portion 71. In the present embodiment, the vacuum vessel 100 has a ground potential. The introduction portion 71 and the insulating member 35 may be provided in the first mold 110. In this case, the introduction unit 71 may apply a voltage between the workpiece 10 and the vacuum vessel 100 via the masking member 21.

  The magnetic field forming unit 41 is a device for forming a magnetic field in the first recess 114. The magnetic field forming unit 42 is a device for forming a magnetic field in the second recess 124. In the present embodiment, the magnetic field forming units 41 and 42 are configured by permanent magnets, and for example, neodymium magnets are used. The magnetic field forming portion 41 is disposed in the first recess portion 114 so as to be separated from the first peripheral portion 111 in the first mold 110. In the present embodiment, the magnetic field forming portion 41 is disposed on the side portion 112 in the + X direction and the side portion 112 in the −X direction. The magnetic field forming portion 42 is disposed in the second recessed portion 124 so as to be separated from the second peripheral portion 121 in the second mold 120. In the present embodiment, the magnetic field forming portion 42 is disposed on the side portion 122 in the + X direction and the side portion 122 in the −X direction.

  The insulating member 30 is disposed between the first peripheral edge 111 and the second peripheral edge 121 and contacts the masking member 22 to support the masking member 22. The insulating member 30 is made of, for example, aluminum oxide, silicon oxide, zirconium oxide, magnesium oxide, titanium oxide, or a combination of two or more of them.

  The pallet 130 is a conductive plate member. The pallet 130 is also a member for transporting the work 10 and the masking members 21 and 22 into the vacuum vessel 100. The pallet 130 is disposed between the first peripheral edge 111 and the second peripheral edge 121. In the present embodiment, the insulating member 30, the masking member 22, the work 10, and the masking member 21 are loaded in this order in the + Y direction in this embodiment, and the pallet 130 has the masking member 22 through the insulating member 30. Hold. In the present embodiment, the pallet 130 has an edge 130 t exposed outside the vacuum vessel 100 in a state where the vacuum vessel 100 is closed. The edge 130 t is a portion that contacts the pallet 130 when the conveying device 55 described later conveys the pallet 130. In the present embodiment, the pallet 130 has a ground potential. The pallet 130 is made of, for example, aluminum, stainless steel, titanium or the like.

  The seal members 61 and 62 are disposed between the first peripheral edge 111 and the second peripheral edge 121 and contact the pallet 130. The sealing members 61 and 62 are members for keeping the inside of the vacuum vessel 100 airtight. The seal members 61 and 62 are insulating members, and in the present embodiment, are annular members made of rubber. In the present embodiment, the seal members 61 and 62 use O-rings. In the present embodiment, the seal member 61 is fitted in a groove provided in the first mold 110. The seal member 62 is fitted in a groove provided in the second mold 120. The seal members 61 and 62 and the pallet 130 are also separation members that hold the work 10 and the masking members 21 and 22 apart and insulated from the first peripheral edge 111 and the second peripheral edge 121.

  The opening and closing device 50 is a device for opening and closing the vacuum vessel 100. In the present embodiment, the opening / closing device 50 moves the first mold 110 in the + Y direction to open the vacuum vessel 100, and moves the first mold 110 in the −Y direction to close the vacuum vessel 100.

  The transfer device 55 is a device for transferring the pallet 130 into the vacuum vessel 100 and transferring the pallet 130 out of the vacuum vessel 100. In the present embodiment, the transport device 55 contacts the edge 130t of the pallet 130, and the insulating member 30, the masking members 21 and 22, and the work carried on the pallet 130 and the pallet 130 in a state where the vacuum container 100 is opened. 10 are transferred into the vacuum vessel 100. Further, the transport device 55 places the pallet 130 on the second mold 120 via the seal member 62 by moving the transported pallet 130 downward. The transfer device 55 can also transfer the pallet 130 moved upward to the outside of the vacuum vessel 100 by moving the pallet 130 along the XZ plane.

  The masking members 21 and 22 have openings 21c and 22c that open in the processing target portion 10A of the workpiece 10, and cover the non-processing target portion 10B on flat portions 21b and 22b that define the openings 21c and 22c. The masking member 21 is disposed on the side of the first mold 110 of the work 10, and the masking member 22 is disposed on the side of the second mold 120 of the work 10. In the masking members 21 and 22, parts including the openings 21 c and 22 c are disposed in the first recess 114 and the second recess 124, and the other parts are the first peripheral edge 111 and the second peripheral edge 121. It is arranged between. The masking member 22 contacts the non-processing target portion 10B of the workpiece 10 to support the workpiece 10. The masking member 22 is also referred to as a “support member”. The masking members 21 and 22 are formed of a conductive material, such as titanium, a titanium alloy, stainless steel, aluminum or the like. The masking members 21 and 22 may be formed of the same material as the work 10.

  FIG. 3 is an enlarged sectional view of the masking members 21 and 22. As shown in FIG. In FIG. 3, the X1 part shown in FIG. 1 is enlarged and shown as an example. FIG. 4 is a schematic top view showing the workpiece 10 supported by the masking member 22. As shown in FIG. FIG. 4 is a top view 4-4 of FIG. 3, and the masking member 21 is not shown. The masking member 22 as a support member includes an opening 22c, a flat portion 22b which is a surface along an XZ plane defining the opening 22c, and a convex portion 22a provided on the flat portion 22b. The convex portion 22 a is formed in a size that can be inserted into the manifold hole h of the work 10. The convex portion 22 a includes an inclined surface 22 s facing the first concave portion 114. The workpiece 10 shown in FIGS. 3 and 4 is supported by the masking member 22 by contacting with the inclined surface 22s. The angle between the flat portion 22 b and the inclined surface 22 s is an acute angle, for example, an angle in the range of 20 ° to 70 °. In the present embodiment, the angle formed is 30 °. In the present embodiment, the masking members 21 and 22 are separated from the work 10 by the distance A2 in the Y direction and cover the non-processing target portion 10B (FIG. 3). The distance A2 is larger than the amount of warpage that occurs when the work 10 is pressed. The amount of warpage is, for example, a value in the range of 3 to 15 mm or a value in the range of 5 to 10 mm. In the present embodiment, the distance A2 is larger than the height A1 of the protrusion 22a in the Y direction. In another embodiment, the distance A1 and the distance A2 may be equal. Further, the convex portion 22 a is provided corresponding to any one of the manifold holes h located in the + X direction of the work 10 and any one of the manifold holes h located in the −X direction of the work 10 Just do it. For example, the convex portions 22 a may be provided corresponding to all the manifold holes h of the work 10.

A2. Plasma Processing Method FIG. 5 is a process diagram showing a plasma processing method of the workpiece 10 by the plasma processing apparatus 200. As shown in FIG. Hereinafter, a method of forming a film on the processing target portion 10A of the workpiece 10 by the plasma processing apparatus 200 will be described as an example. In the film formation by the plasma processing apparatus 200, first, a transfer step of transferring the work 10 into the vacuum container 100 is performed (step S10). In the present embodiment, the insulating member 30, the masking member 22, and the work 10 are loaded on the pallet 130, and the masking member 21 is loaded on the work 10. In the present embodiment, the work 10 is loaded on the masking member 22 such that the convex portion 22a of the masking member 22 is inserted into the manifold hole h. Thereafter, the first mold 110 of the vacuum vessel 100 is moved in the + Y direction by the opening / closing device 50, and the pallet 130 on which the insulating members 30, the masking members 21 and 22 and the work 10 are loaded is Transported to The transported pallet 130 is disposed on the second mold 120 via the seal member 62. In the transfer process, when the pallet 130 is placed on the second mold 120, the vacuum vessel 100 is closed. In the present embodiment, the first mold 110 is moved by the opening / closing device 50 in the −Y direction. When the vacuum vessel 100 is closed, the sealing member 61 and the sealing member 62 contact the pallet 130, and the masking members 21 and 22 and the first peripheral edge 111 and the second peripheral edge 121 are separated, and the masking members 21 and 22 A gap as shown in FIG. 1 is formed between the first peripheral edge 111 and the second peripheral edge 121. The distance along the Y direction of the gap is, for example, a value in the range of 0.5 mm to 2.0 mm.

  Next, an exhaust process is performed in which the gas in the vacuum vessel 100 is exhausted (step S20). In the present embodiment, the plasma processing apparatus 200 is installed, for example, in a nitrogen gas atmosphere. In the exhaust process, nitrogen gas in the vacuum vessel 100 is exhausted by the exhaust device 90 through the exhaust port 91, and the inside of the vacuum vessel 100 is vacuumized.

  Next, a voltage application process is performed (step S30). In the voltage application step, gas is supplied to the inside of the vacuum vessel 100 through the supply port 81 by the gas supply device 80, and between the workpiece 10 and the vacuum vessel 100 through the masking member 22 by the voltage application unit 70. A voltage is applied to generate plasma in the first recess 114 and the second recess 124. In the voltage application step, the inside of the vacuum vessel 100 is heated to a high temperature.

  In the present embodiment, the voltage application process includes a temperature raising / etching process, a first layer formation process, and a deposition process. The temperature raising / etching step is a step of raising the temperature of the work 10 and removing moisture and the like attached to the work 10. In the first layer formation step, the voltage application unit 70 and the gas supply device 80 are controlled to form a dense layer on the work 10 so that the deposition rate becomes relatively slow after the temperature raising and etching steps. It is a process. The deposition step is a step of depositing a film on the first layer at a deposition rate faster than the formation of the first layer. For example, argon gas is supplied in the temperature raising / etching step. In the first layer forming step and the deposition step, hydrogen gas and argon gas, for example, are supplied as carrier gas, and nitrogen gas and pyridine gas are supplied as source gas to form a thin film on the processing target portion 10A of the work 10 Be done. When the voltage application process is completed, the supply of gas and the application of voltage are stopped.

  Next, a repressurization step is performed in which the pressure in the vacuum vessel 100 is adjusted (step S40). In the present embodiment, in order to return the pressure in the vacuum vessel 100 to a pressure at which the vacuum vessel 100 can be opened by the opening / closing device 50, nitrogen gas is supplied into the vacuum vessel 100 by the gas supply device 80. . When the pressure in the vacuum container 100 is adjusted, the first mold 110 is moved in the + Y direction by the opening / closing device 50, and the transfer device 55 loads the insulating member 30, the masking members 21 and 22, and the work 10 The pallet 130 is carried out of the vacuum vessel 100. As described above, the series of plasma processing by the plasma processing apparatus 200 is completed.

A3. Effect A3-1. Effect 1
Due to the stress at the time of processing of the work 10, the non-processing target portion 10B which is the outer peripheral portion of the work 10 may have a warp with respect to the processing target portion 10A. Furthermore, during the plasma processing, the temperature of the non-processing target portion 10B located on the outer periphery of the processing target portion 10A with respect to the processing target portion 10A located at the central portion of the first recess portion 114 and the second recess portion 124 where plasma is generated. Is low. Therefore, the work 10 may be extended and deformed in the surface direction of the work 10 due to this temperature difference. By such deformation of the work 10, the contact between the masking member supporting the work 10 and the work 10 becomes unstable, and there is a possibility that the film forming density and the etching density of the work 10 may be reduced.

  FIG. 6 is a view for explaining a state in which the workpiece 10 is supported by the masking member 22 of the present embodiment and plasma processing is performed. The masking member 22 has a convex portion 22a provided with an inclined surface 22s. Therefore, even when the workpiece 10 extends in the surface direction during plasma processing, the contact area P can be secured at any position on the inclined surface 22s as shown in (1) to (2) shown in FIG. As a result, a voltage can be applied to the work 10 through the masking member 22. As a result, when the workpiece 10 is deformed, it is possible to suppress a decrease in the film forming density or the etching density of the workpiece 10.

A3-2. Effect 2
FIG. 7 is a conceptual diagram for explaining the state of plasma generated in the vacuum vessel 100. As shown in FIG. In FIG. 7, the magnetic field formed by the magnetic field forming parts 41 and 42 is indicated by a solid arrow. In the plasma, the same number of negatively charged electrons and positively charged ions (positive ions) exist as a whole. When plasma is generated in the voltage application process, the electrons in the first recess 114 are attracted to the magnetic field formed by the magnetic field forming unit 41. In addition, positive ions in the first recess 114 are also attracted to the magnetic field formed by the magnetic field forming portion 41 together with the electrons. Therefore, the plasma density in the first hollow portion 114 is high in the magnetic field formed by the magnetic field forming portion 41 and in the vicinity thereof. On the other hand, the plasma density in the position away from the magnetic field, for example, in the vicinity of the first peripheral edge 111 is relatively low. Similarly, the electrons in the second recess 124 are attracted to the magnetic field formed by the magnetic field forming portion 42. In addition, positive ions in the second recess 124 are also attracted to the magnetic field formed by the magnetic field forming portion 42 together with the electrons. Therefore, the plasma density in the second hollow portion 124 becomes high in the magnetic field formed by the magnetic field forming portion 42 and in the vicinity thereof. On the other hand, the plasma density in the position away from the magnetic field, for example, in the vicinity of the second peripheral portion 121 is relatively low. The positive ions attracted to the magnetic field are directed to the work 10, which is a cathode, as shown by the broken arrows in FIG. 7, and the work 10 is deposited or etched.

  According to the plasma processing apparatus 200 of the present embodiment, the plasma density is high in the magnetic field formed at a position separated from the first peripheral edge 111 by the magnetic field forming unit 41, and the plasma density is relatively near the first peripheral edge 111. To lower. Similarly, in the magnetic field formed at a position separated from the second peripheral portion 121 by the magnetic field forming portion 42, the plasma density is high, and the plasma density is relatively low in the second peripheral portion 121 and the vicinity thereof. As a result, compared to the case where the plasma processing apparatus does not include the magnetic field forming units 41 and 42, masking is performed from between the first peripheral edge 111 and the masking member 21 and between the second peripheral edge 121 and the masking member 22. Since the plasma is prevented from entering the portion where the members 21 and 22 contact the insulating member 30, the plasma enters the contact portion between the masking members 21 and 22 to which the voltage is applied and the insulating member 30. It is possible to suppress the occurrence of abnormal discharge due to

  In addition, when the entire non-processed portion 10B of the work 10 contacts the masking members 21 and 22, there is a possibility that the elongation of the work 10 at the time of plasma processing is inhibited and deformation such as waviness occurs in the processed portion 10A. is there. According to the present embodiment, since the magnetic field forming portions 41 and 42 are provided, the plasma density in the vicinity of the first peripheral edge 111 and the second peripheral edge 121 becomes relatively low. While providing a space between the masking members 21 and 22, it is possible to suppress that the non-processing target portion 10B is plasma-treated by the plasma entering the space. Therefore, it is possible to suppress the plasma processing of the non-processing target portion 10B while suppressing the occurrence of deformation such as waviness in the processing target portion 10A.

B. Other embodiment B1. Other embodiment 1
In the above embodiment, the plasma processing apparatus 200 does not have to include the masking member 21, and the upper surface of the workpiece 10 may be plasma processed.

B2. Another embodiment 2
In the above embodiment, the work 10 may not have the manifold hole h. In this case, the masking member 22 may have a convex portion 22a having an inclined surface 22s at a position corresponding to the + X direction end and the −X direction end of the work 10 shown in FIG. Also according to this embodiment, when the work 10 extends in the surface direction, the contact area P between the work 10 and the masking member 22 can be secured at any position of the inclined surface 22s.

B3. Another embodiment 3
In the above embodiment, the convex portion 22a may be made of a material having conductivity and capable of applying a voltage between the workpiece 10 in contact with the convex portion 22a and the vacuum vessel 100, and may be made of a material different from the flat portion 22b. It may be formed.

B4. Another embodiment 4
In the above embodiment, the plasma processing apparatus 200 may not include the magnetic field forming units 41 and 42.

  The present disclosure is not limited to the above-described embodiment and modifications, and can be implemented with various configurations without departing from the scope of the present disclosure. For example, the technical features in the embodiments corresponding to the technical features in each of the modes described in the section of the summary of the invention can be used to solve some or all of the problems described above, or one of the effects described above. Replacements and combinations can be made as appropriate to achieve part or all. Moreover, elements other than the element described in the independent claim in the component in the embodiment and each modification which were mentioned above are additional elements, and can be omitted suitably.

DESCRIPTION OF SYMBOLS 10 ... Work 10A ... Processing target part 10B ... Non-processing target part 21, 22 ... Masking member 22a ... Convex part 21b, 22b ... Flat part 21c, 22c ... Opening part 22s ... Inclined surface 30, 35 ... Insulation member 41, 42 ... Magnetic field forming unit 50: opening and closing device 55: transport device 61, 62: sealing member 70: voltage application unit 71: introduction unit 80: gas supply device 81: supply port 90: exhaust device 91: exhaust port 95: control unit 100: vacuum Container 110: first mold 111: first peripheral edge 112: side 113: bottom 114: first recess 120: second mold 121: second peripheral edge 122: side 123: bottom 124: second depression Part 130 ... Pallet 130t ... Edge 200 ... Plasma treatment device P ... Contact area h ... Manifold hole

Claims (1)

A plasma processing apparatus for performing plasma processing on a plate-like workpiece having conductivity,
A vacuum vessel,
A first recessed portion in which a processing target portion on the upper surface side of the work is disposed, and a first peripheral portion continuously provided from the first recessed portion outside the first recessed portion; Type and
A second depression is disposed opposite to the first mold and in which the processing target portion on the lower surface side of the work is disposed, and is continuously provided from the second depression outside the second depression. A second mold comprising: a second peripheral portion;
A conductive portion having an opening opening at the processing target portion and a flat portion defining the opening, at least a portion of which is disposed between the first peripheral portion and the second peripheral portion A supporting member, which supports the work by contacting a non-processing target portion located on an outer periphery of the processing target portion of the work;
A voltage application unit for applying a voltage between the support member and the vacuum vessel;
The flat portion is provided with a convex portion having an inclined surface facing the first hollow portion side,
Plasma processing equipment.

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