JP6671034B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method for cleaning and etching a substrate on which electronic components are mounted.

  The plasma processing apparatus includes a chamber that forms a reduced-pressure atmosphere, an electrode body mounted in the chamber, and a power supply that applies high-frequency power to the electrode body. The substrate is placed on the electrode body, gas is introduced into the chamber, and high-frequency power is applied to the electrode body to generate plasma, and the surface treatment of the substrate is performed by an etching action by ions and radicals contained in the plasma. Is performed.

  The substrate is carried into the chamber while being supported by rails forming a transfer path. The substrate is disposed in the chamber so as to face the electrode body. At this time, if an irregular gap is formed between the substrate and the electrode body, abnormal discharge may occur in the gap.

  Therefore, Patent Document 1 discloses a method in which a rail holding body that integrally holds a plurality of rails is provided in a plasma processing apparatus, and the rail holding body is moved so that a substrate is pressed against an electrode body by the plurality of rails during plasma generation. Propose to let. The rail holder is arranged along the periphery of the electrode body so as to surround the electrode body. The rail holder is formed of a conductor such as aluminum or stainless steel for reasons such as strength, weight reduction, and plasma resistance.

JP 2015-9169 A

  Patent Document 1 is based on the premise that a substrate is arranged so that no irregular gap is generated between the electrode body and the substrate, and the substrate is subjected to plasma processing in that state. In this case, since the substrate is pressed against the electrode body, only one surface (upper surface) of the substrate is subjected to plasma processing, and the surface of the substrate facing the electrode body (back surface) cannot be processed. On the other hand, for example, when performing chemical etching using neutral radicals contained in plasma, if plasma is generated with a certain distance provided between the substrate and the electrode body, radicals in the plasma will be generated. Since it also diffuses into the space between the substrate and the electrode body, it is possible to perform plasma processing on both surfaces of the substrate at once, which is efficient. Therefore, the distance between the substrate and the electrode body can be changed, and the plasma processing can be performed not only in a state where the substrate is pressed against the electrode body but also in a state where a certain distance is provided between the substrate and the electrode body. There is a need for a plasma processing apparatus that can be used.

  For that purpose, in order to change the distance between the substrate and the electrode body, it is necessary to move the position of the rail holder that integrally holds the plurality of rails. In general, the chamber of the plasma processing apparatus is desirably of a minimum size capable of accommodating the electrode body and the rail holder arranged around the electrode body in order to reduce the installation area of the apparatus. The distance between the rail and the rail holder is small. However, if the positional relationship between the electrode body and the rail holder is changed in a state where the distance between the electrode body and the rail holder is small, abnormal discharge may easily occur.

  Specifically, when a reaction product generated by the plasma treatment adheres to the side surface of the rail holder on the side of the electrode body or the side surface of the outer edge of the electrode body, a local charge-up occurs, Abnormal discharge is more likely to occur because the distance from the body is further reduced. Also, if the corner of the electrode holder side of the rail holder, which is formed of a conductor and is grounded, is close to the side surface of the outer edge of the electrode body to which high-frequency power is applied, the electric field concentrates on the corner. , Abnormal discharge is likely to occur. Such abnormal discharge becomes more remarkable as the high-frequency power increases. Therefore, it becomes difficult to increase the high frequency power in order to increase the processing capability of the plasma processing apparatus.

  In view of the above, one aspect of the present invention provides a chamber for accommodating a substrate, a plurality of rails for supporting the substrate in the chamber, and an electrode disposed so as to face the substrate accommodated in the chamber. A body, the plurality of rails are integrally held, and a rail holder disposed around the electrode body; and the rail holder is moved together with the substrate to change a distance between the substrate and the electrode body. And a power supply unit for applying high-frequency power to the electrode body to generate plasma in the chamber, and when exposing the substrate to the plasma, the rail holder and the electrode body. The present invention relates to a plasma processing apparatus in which an insulating member is arranged so as to block a shortest path connecting the two.

  Another aspect of the present invention is a step of using a plurality of rails to face the substrate to the electrode body in the chamber, applying high-frequency power to the electrode body to generate plasma in the chamber, Exposing the substrate to plasma generated in a chamber, wherein the plurality of rails are integrally held by a rail holder disposed around the electrode body, and the rail holder Is movable together with the substrate so as to change the distance between the substrate and the electrode body, and when exposing the substrate to the plasma, blocks a shortest path connecting the rail holder and the electrode body. Thus, the present invention relates to a plasma processing method in which an insulating member is arranged.

  According to the present invention, it is possible to suppress occurrence of abnormal discharge between the rail holder and the electrode body, regardless of the positional relationship between the rail holder and the electrode body.

FIG. 1 is a perspective view schematically illustrating an appearance of a plasma processing apparatus according to an embodiment of the present invention. FIG. 3 is a perspective view schematically showing a state in which a rail holder of a base of the plasma processing apparatus has moved downward. FIG. 3 is a plan view schematically showing a base of the plasma processing apparatus. It is a perspective view which shows a rail holding body and several rails typically. FIG. 2 is a sectional view taken along line AA of FIG. 1 in a state where a chamber of the plasma processing apparatus is opened. FIG. 2 is a sectional view taken along line AA of FIG. 1 in a state where a chamber of the plasma processing apparatus is closed. It is arrow sectional drawing corresponding to FIG. 5 in the state which opened the chamber of the modification of the same plasma processing apparatus. FIG. 7 is a sectional view taken along an arrow corresponding to FIG. 6 in a state where a chamber of a modification of the plasma processing apparatus is closed.

  A plasma processing apparatus according to the present invention includes a chamber accommodating a substrate, a plurality of rails supporting the substrate in the chamber, an electrode body disposed to face the substrate accommodated in the chamber, and a plurality of rails. And a rail holding member disposed around the electrode body, moving means for moving the rail holding member together with the substrate to change the distance between the substrate and the electrode body, and generating plasma in the chamber. For applying high frequency power to the electrode body. The rail holder is formed of a conductor such as aluminum or stainless steel for reasons such as strength, weight reduction, and plasma resistance.

  The moving width of the rail holder by the moving means is not particularly limited. However, when the substrate is exposed to the plasma and the substrate is subjected to the plasma treatment, the variation width of the distance between the substrate and the electrode body is usually in the range of 0 to 40 mm. The distance between the substrate and the electrode body is appropriately set from the above range according to the size and type of the substrate and the conditions of the plasma processing.

  When the substrate is subjected to plasma processing, an insulating member is arranged so as to block the shortest path connecting the rail holder and the electrode body, regardless of the positional relationship between the rail holder and the electrode body. This suppresses abnormal discharge between the rail holder and the electrode body. Therefore, it becomes easy to increase the output of the high-frequency power and increase the etching rate.

  When performing physical etching using ions, from the viewpoint of increasing the etching rate as much as possible, it is desirable that the distance between the substrate and the electrode body be as small as possible, and that the substrate be in contact with the surface of the electrode body. Here, the distance between the substrate and the electrode body when the substrate and the electrode body are closest to each other is defined as a first distance.

  The first distance is desirably 0 to 2 mm, and the first distance is more desirably zero (that is, the substrate and the electrode body are in contact with each other). Thereby, the high-frequency power applied to the electrode body can be efficiently applied to the substrate, and the ions in the plasma can be sufficiently accelerated before colliding with the substrate, thereby enhancing the effect of the physical etching. be able to. In physical etching, it is preferable to use argon, helium, or the like as a process gas.

  In the case of performing chemical etching using radicals, the distance between the substrate and the electrode body may be set to a second distance larger than the first distance, and plasma may be caused to enter between the substrate and the electrode body. More preferably, the second distance is 5 to 20 mm. Thereby, both surfaces of the substrate can be simultaneously subjected to plasma processing. In chemical etching, it is preferable to use oxygen, fluorocarbon, or the like as a process gas.

  The rail holder is arranged around the electrode body so as to surround the electrode body. Further, even when the positional relationship between the rail holder and the electrode body is changed, the distance between the substrate and the electrode body when the substrate is subjected to the plasma processing does not become extremely large. Therefore, the side surface of the rail holder on the electrode body side and the side surface of the outer edge of the electrode body are at least partially opposed to each other when the substrate is subjected to plasma processing. That is, the shortest path connecting the rail holder and the electrode body is the shortest path connecting a point on the side surface of the rail holder on the electrode body side and a point on the side surface of the outer edge portion of the electrode body. Therefore, the insulating member has a shape along the outer edge of the electrode body or the inner peripheral surface of the rail holder, and has an annular or frame shape.

  The annular or frame-shaped insulating member may be an independent member attached to at least one of the electrode body and the rail holder, and is formed so as to cover a predetermined portion of at least one side surface of the electrode body and the rail holder. It may be a coated insulating member. The material of the annular or frame-shaped insulating member may be any metal oxide such as alumina or silica, metal nitride such as silicon nitride or aluminum nitride, or any other insulating ceramic material. At this time, the thickness of the insulating member in a direction parallel to the shortest path is desirably 1 to 10 mm.

  The insulating member is configured so that the shortest path connecting the rail holder and the electrode body is interrupted by the insulating member when the plasma processing is performed, for example, to cover at least a part of the side surface of the outer edge of the electrode body. Is provided. Alternatively, the insulating member is provided on the rail holder so as to cover at least a part of the side surface on the electrode body side of the rail holder.

  At least a part of the electrode body is formed of a conductor, and the conductor portion may be composed of a plurality of parts. Further, an insulating layer may be formed on the surface of the electrode body facing the substrate. However, from the viewpoint of further increasing the etching rate, it is desirable that the conductor portion is exposed on the surface of the electrode body facing the substrate.

Hereinafter, a plasma processing apparatus and a plasma processing method according to an embodiment of the present invention will be specifically described with reference to the drawings.
FIG. 1 is a perspective view schematically showing the appearance of the plasma processing apparatus 100. The plasma processing apparatus 100 includes a base 110 and a lid 120 having a dome-shaped space inside. The base 110 is connected to the outer rail 200.

  FIG. 2 is a perspective view schematically illustrating the base 110 of the plasma processing apparatus 100, and FIG. 3 is a plan view schematically illustrating the base 110. The outer rail 200 is connected to the inner rail 130, and forms a transport path for transporting the substrate 300 together with the inner rail 130. The substrate 300 is mounted on the base 110 so as to face the electrode body 112 via the inner rail 130 or is placed on the upper surface of the electrode body 112. That is, the chamber accommodating the substrate 300 is formed by integrating the base 110 and the lid 120. The electrode body 112 is connected to the power supply unit 400. The power supply unit 400 includes, for example, a high-frequency power supply 401 and an automatic matching unit 402. The automatic matching unit 402 has an action of preventing interference by a high-frequency reflected wave applied between the electrode body 112 and the lid 120.

  The lid 120 has a function as a counter electrode of the electrode body 112 included in the base 110. The substrate 300 is carried into the chamber by being transferred from the outer rail 200 to the inner rail 130, is subjected to plasma processing, and is then carried out of the chamber by being transferred from the inner rail 130 to the outer rail 200.

  The inside of the chamber can be maintained at a reduced pressure atmosphere through an exhaust port 117 communicating with the chamber. The exhaust port 117 communicates with a vacuum suction unit (not shown). The vacuum suction means includes a vacuum pump, an exhaust pipe, a pressure adjusting valve, and the like. A seal member 116 is provided between the base 110 and the lid 120 to enhance the hermeticity of the chamber. Although not shown, the plasma processing apparatus 100 includes a gas supply unit for introducing a process gas serving as a plasma raw material into the chamber. The gas supply means includes a gas cylinder for supplying a process gas such as argon, oxygen, and nitrogen, and a pipe for introducing a process gas into a chamber.

  As shown in FIGS. 2 and 3, the inner rail 130 is integrally held by a frame-shaped rail holder 140 arranged so as to surround the electrode body 112. FIG. 4 is a perspective view schematically showing a rail holder and a plurality of rails. The rail holder 140 includes a shaft 141, and can be moved up and down by sliding the shaft 141 with respect to the base 111 (see FIG. 4) of the base 110. The inner rail 130 is fixed to the rail holder 140 at both ends in the longitudinal direction. Therefore, the inner rail 130 moves up and down together with the rail holder 140.

  Since the inner rail 130 is exposed to the plasma during the plasma processing, it is preferable to form the inner rail 130 from a hard insulating material. As the insulating material forming the inner rail 130, metal oxides such as alumina and silica, metal nitrides such as silicon nitride and aluminum nitride, and other insulating ceramic materials are preferable. On the other hand, the rail holder 140 is formed of a conductor for reasons such as strength, weight reduction, and plasma resistance.

  5 and 6 correspond to a cross-sectional view taken along line AA of the plasma processing apparatus 100 shown in FIG. FIG. 5 shows a state in which the chamber is opened (a state in which the lid 120 is separated from the base 110). The chamber is opened when the substrate 300 is loaded into and out of the chamber. FIG. 6 shows a state in which the chamber is closed (a state in which the opening end of the lid 120 is in contact with the base 110). When performing plasma processing on the substrate 300, the chamber is closed. The opening and closing of the chamber is performed by moving the lid 120 up and down with respect to the base 110. The movement of the lid 120 is controlled by a predetermined drive source (not shown).

  5 and 6, the electrode body 112 is held by the base 111 via the first insulating member 114. The electrode body 112 includes an upper electrode body 112a facing the substrate 300 during plasma processing, and a lower electrode body 112b facing the base 111 via the first insulating member 114. Each of the upper electrode body 112a and the lower electrode body 112b is formed of a conductor. A frame-shaped second insulating member 115 is mounted on the outer edge of the electrode body 112 so as to be sandwiched between the upper electrode body 112a and the lower electrode body 112b. As a result, the side surface of the outer edge of the electrode body 112 is covered with the second insulating member 115 over the entire circumference thereof, and the shortest path connecting the frame-shaped rail holder 140 and the electrode body 112 is formed in the second Blocked by insulating material.

  In the plasma processing apparatus 100, moving means for moving the rail holder 140 to change the distance between the substrate 300 and the electrode body 112 are provided on the urging means 118 attached to the base 110 and the lid 120. And an interlocking means 121.

  The urging force of the urging means 118 acts in a direction to increase the distance between the substrate 300 and the electrode body 112. That is, the urging means 118 pushes the rail holder 140 upward in the no-load state, and a sufficient gap is formed between the substrate 300 supported by the inner rail 130 and the electrode body 112. . The non-load state of the urging means 118 is achieved when the lid 120 is sufficiently separated from the base 110 and the chamber is opened.

  In a state where the opening end of the lid 120 is in close contact with the base 110 and the chamber is closed, the interlocking means 121 provided on the lid 120 abuts on the rail holding member 140 and urges the rail holding member 140. A force opposing the urging force of the means 118 is applied. Thereby, the rail holder 140 is pushed down.

  In a state where the chamber is closed, the distance between the substrate 300 and the electrode body 112 is the minimum first distance. On the other hand, when the chamber is completely opened, the distance between the substrate 300 and the electrode body 112 is a second distance larger than the first distance.

  The interlocking means 121 may be any member that can press the rail holder 140 so that the distance between the substrate 300 and the electrode body 112 becomes the first distance when the chamber is closed. The interlocking means 121 may be, for example, a projecting member detachably mounted on the inner wall surface of the lid 120. The shape of the projection member is not particularly limited.

  When the interlocking means 121 is removed from the inner wall surface of the lid 120, even when the chamber is closed, the distance between the substrate 300 and the electrode body 112 remains on the inner rail 130 with the second distance larger than the first distance. Supported. Thus, the plasma can act on both surfaces of the substrate 300. That is, the illustrated plasma processing apparatus 100 is designed so that the distance between the substrate 300 and the electrode body 112 can be changed by attaching and detaching the interlocking means 121. In addition, since the side surface of the outer edge of the electrode body 112 is covered with the second insulating member 115, abnormal discharge of abnormal discharge can be performed both when the interlocking means 121 is mounted and when the interlocking means 121 is removed. Generation can be suppressed.

  The inner rail 130 extends over the rail holder 140 so as to extend in the transport direction of the substrate 300. Each of the pair of inner rails 130 supporting the substrate 300 has a sliding surface 131 that comes into contact with the lower surface of the end of the substrate 300 when the substrate 300 is transported. Such a sliding surface 131 is provided by forming a groove on each of the mutually facing side surfaces of the pair of inner rails 300. Note that the inner rail 130 only needs to have a function of at least temporarily supporting the substrate 300 in the chamber, and need not always support the substrate 300. For example, when the substrate 300 is placed on the upper surface of the electrode body 112, the inner rail 130 does not need to support the substrate 300.

  On the opposite side of the sliding surface 131, there is a flange 132 that contacts the upper surface of the end of the substrate 300 when the distance between the substrate 300 and the electrode body 112 is set to the first distance. The lower surface of the flange 132 (the surface that comes into contact with the upper surface of the end of the substrate 300) is disposed above the upper surface of the electrode body 112 during the transportation of the substrate 300. When the distance between the substrate 300 and the electrode body 112 is the first distance, the lower surface of the flange 132 is arranged to be substantially the same as the upper surface of the electrode body 112. At this time, the edge of the substrate 300 is pressed against the electrode body 112 by the lower surface of the flange 132. This makes it difficult for an irregular gap to be formed between the substrate 300 and the electrode body 112.

  The upper surface of the electrode body 112 has a groove 112g for accommodating the inner rail 130 when the distance between the substrate 300 and the electrode body 112 is the first distance. The depth of the groove 112g is designed such that when the distance between the substrate 300 and the electrode body 112 is the first distance, the lower surface of the flange 132 is substantially the same as the upper surface of the electrode body 112.

  When the electrode body 112 is composed of the upper electrode body 112a and the lower electrode body 112b, the distance between the substrate 300 and the electrode body 112 or the upper part is changed according to the type of the substrate 300 by exchanging the upper electrode body 112a. The material of the electrode body 112a can be flexibly changed. In this case, a plurality of plate-like members may be arranged on the upper surface of the flat lower electrode body 112b to form the upper electrode body 112a including the plurality of plate-like members.

  Next, FIGS. 7 and 8 show modified examples of the plasma processing apparatus 100 shown in FIG. 3, and are sectional views taken along the line AA corresponding to FIGS. 5 and 6, respectively. FIG. 7 shows a state where the chamber is opened. FIG. 8 shows a state where the chamber is closed. 7 and 8, the components corresponding to the components shown in FIGS. 1 to 6 are denoted by the same reference numerals.

  In the modified examples shown in FIGS. 7 and 8, no insulating member is provided on the outer edge of the electrode body 112, and the third insulating member 142 covers the rail holding body 140 so as to cover the side surface on the electrode body 112 side. It is attached to the body. Thereby, the shortest path connecting the rail holder and the electrode body formed along the inner peripheral surface of the frame-shaped rail holder can be blocked by the third insulating member 142 without excess or shortage. In the illustrated example, the third insulating member 142 covers only the side surface of the rail holder 140 on the electrode body 112 side, but the third insulating member 142 may further cover the lower surface of the rail holder 140. Alternatively, the entire surface of the rail holder 140 may be covered.

  Next, the plasma processing method according to the present invention includes a step of supporting the substrate on a plurality of rails to face the electrode body in the chamber and a step of applying high-frequency power to the electrode body to generate plasma in the chamber. And exposing the substrate to plasma generated in the chamber. Here, the plurality of rails are integrally held by a rail holding body disposed around the electrode body. The rail holder is movable so as to change the distance between the substrate and the electrode body. However, when exposing the substrate to plasma, the insulating member is arranged so as to block the shortest path connecting the rail holder and the electrode body. The plasma processing method includes a method of performing plasma processing on a substrate using the plasma processing apparatus.

Hereinafter, a first method of performing the plasma processing by setting the distance between the substrate 300 and the electrode body 112 to the minimum first distance will be described.
First, with the chamber open, the substrate 300 is transferred from the outer rail 200 to the inner rail 130 of the base 110. Thereafter, the substrate 300 is transferred to a position facing the electrode body 112 while contacting the sliding surface 131 of the inner rail 130. At this time, the rail holder 140 pushes up the inner rail 130 by the urging force from the urging means 118, and there is a sufficient distance (second distance) between the substrate 300 and the electrode body 112.

  Next, the lid 120 is moved in the direction of the base 110 to close the chamber. At this time, the tip of the interlocking means 121 provided on the lid 120 abuts on the rail holder 140 and pushes the rail holder 140 downward in conjunction with the movement of the lid 120. Accordingly, the inner rail 130 and the board 300 are also pushed down. When the inner rail 130 contacts the bottom surface of the groove 112 g of the electrode body 112, the lower surface of the flange 132 of the inner rail 130 contacts the upper surface of the end of the substrate 300, and the substrate 300 is firmly fixed to the upper surface of the electrode body 112. Is done. As a result, the distance between the substrate 300 and the electrode body 112 is fixed at the minimum first distance, and the formation of an irregular gap between the substrate 300 and the electrode body 112 is suppressed.

  Next, the air in the sealed chamber is exhausted using a suction means, and when a predetermined reduced pressure state is reached, for example, a process such as argon is introduced into the chamber from a gas supply means mounted inside the base 110. Gas is introduced.

  When the pressure in the chamber reaches a predetermined pressure, the power supply unit 400 applies high-frequency power between the electrode body 112 and the grounded lid 120. Thereby, the process gas in the chamber is turned into plasma. As a result, the surface of the substrate 300 is exposed to the plasma, and the surface of the substrate 300 is cleaned.

  When the cleaning of the substrate 300 by the plasma is completed, the inside of the chamber is opened to the atmosphere, and the reduced pressure state is released. Next, when the lid 120 is raised with respect to the base 110, the urging force of the interlocking means 121 on the rail holder 140 is released, and the inner rail 130 supporting the substrate 300 is raised together with the rail holder 140. As a result, the sliding surface 131 of the inner rail 130 and the outer rail 200 are arranged in the same plane, and the substrate 300 is transferred to the outer rail 200 and carried out.

Next, a second method for performing the plasma processing by setting the distance between the substrate 300 and the electrode body 112 to the maximum second distance will be described.
First, as in the first method, with the chamber open, the substrate 300 is transferred from the outer rail 200 to the inner rail 130 of the base 110 and transferred to a predetermined position. At this time, the distance between the substrate 300 and the electrode body 112 is set to the second distance.

  Next, the lid 120 from which the interlocking means 121 has been removed is moved in the direction of the base 110 to close the chamber. At this time, the rail holder 140 is stationary without interlocking with the movement of the lid 120. Therefore, the distance between the substrate 300 and the electrode body 112 remains the maximum second distance.

  Next, the air in the hermetically sealed chamber is exhausted, and when a predetermined reduced pressure state is reached, a process gas such as oxygen for performing chemical etching is introduced into the chamber.

  When the pressure in the chamber reaches a predetermined pressure, the power supply unit 400 applies high-frequency power between the electrode body 112 and the lid 120 grounded. Thereby, the process gas in the chamber is turned into plasma. Since the plasma can also flow into the space between the substrate 300 and the electrode body 112, both surfaces of the substrate 300 are cleaned.

  When the cleaning of the substrate 300 by the plasma is completed, the inside of the chamber is opened to the atmosphere, and the lid 120 is raised with respect to the base 110. At this time, since the sliding surface 131 of the inner rail 130 and the outer rail 200 are arranged on the same plane, the substrate 300 is transferred to the outer rail 200 as it is and is carried out.

  Here, the distance between the substrate 300 and the electrode body 112 is different between the first method and the second method, and the positional relationship between the rail holder 140 and the electrode body 112 is also different. Therefore, if the second insulating member or the third insulating member that interrupts the shortest path connecting the rail holder 140 and the electrode body 112 does not exist, at least one of the methods may be used to perform the plasma processing on the substrate 300. Abnormal discharge is likely to occur between the holder 140 and the electrode body 112. Specifically, when a reaction product generated by the plasma treatment adheres to the side surface of the rail holder 140 on the side of the electrode body 112 or the side surface of the outer edge of the electrode body 112, the charge is locally increased, The distance between the body 112 and the rail holding member 140 is further reduced, so that abnormal discharge is likely to occur. If the corner of the rail holder 140 formed of a conductor and grounded on the electrode body 112 side is close to the side surface of the outer edge of the electrode body 112 to which the high-frequency power is applied, the corner is formed. The electric field is concentrated and abnormal discharge is likely to occur. On the other hand, in the above-described embodiment, since the second insulating member covering the side surface of the outer edge portion of the electrode body 112 or the third insulating member covering the side surface of the rail holder 140 on the electrode body 112 side exists, the substrate 300 and the electrode body 112 Irrespective of the distance from the battery, occurrence of abnormal discharge is suppressed.

  In the above embodiment, the case where the movement of the rail holder 140 is linked to the movement of the lid 120 has been described, but a mechanism for vertically moving the rail holder 140 independently of the lid 120 is provided. Is also good. For example, instead of providing the interlocking means 121 on the lid 120 and providing the urging means 118 on the base 110, an elevating mechanism (such as an air actuator) for raising and lowering the shaft 141 of the rail holder 140 may be attached. In this case, the movement of the rail holder 140 does not interlock with the movement of the lid 120, and the rail holder 140 can be moved at an arbitrary timing. Therefore, for example, the distance between the substrate 300 and the electrode body 112 can be changed during the plasma processing without opening the inside of the chamber to the atmosphere.

  Further, by changing the position (height) at which the interlocking means 121 is attached, or by selecting an arbitrary interlocking means from a plurality of types of interlocking means 121 having different sizes so that the interlocking means 121 can be attached to the lid 120, The distance from the electrode body 112 can be made variable.

  In the above embodiment, the case where the substrate 300 is cleaned using the plasma processing apparatus 100 has been described. However, when the substrate 300 is etched, the etching can be performed according to the above method.

  The plasma processing apparatus and the plasma processing method according to the present invention are particularly preferable when it is desired to change the distance between the substrate and the electrode body, or when it is desired to perform efficient plasma processing with high output power. Are suitable.

  100: plasma processing apparatus, 110: base, 111: base, 112: electrode body, 112a: upper electrode body, 112b: lower electrode body, 112g: groove, 114: first insulating member, 115: second insulating member, 116 : Seal member, 117: exhaust port, 118: urging means, 120: lid, 121: interlocking means, 130: internal rail, 131: sliding surface, 132: flange, 140: rail holder, 141: shaft , 142: third insulating member, 200: outer rail, 300: substrate, 400: power supply unit, 401: high frequency power supply, 402: automatic matching device

Claims (5)

A chamber for accommodating the substrate;
A plurality of rails supporting the substrate in the chamber;
An electrode body disposed so as to face the substrate housed in the chamber;
A rail holder that holds the plurality of rails together and is disposed around the electrode body;
Moving means for moving the rail holder together with the substrate to change the distance between the substrate and the electrode body,
A power supply unit for applying high-frequency power to the electrode body to generate plasma in the chamber,
A plasma processing apparatus, wherein when exposing the substrate to the plasma, an insulating member is disposed so as to block a shortest path connecting the rail holder and the electrode body.   The plasma processing apparatus according to claim 1, wherein the insulating member is provided on the electrode body so as to cover at least a part of a side surface of the outer edge of the electrode body.   The plasma processing apparatus according to claim 1, wherein the insulating member is provided on the rail holder so as to cover at least a part of a side surface of the rail holder on the electrode body side.   The plasma processing apparatus according to claim 1, wherein a conductor portion of the electrode body is exposed on a surface of the electrode body facing the substrate. A step of using a plurality of rails to face the substrate to the electrode body in the chamber,
Applying high frequency power to the electrode body to generate plasma in the chamber;
Exposing the substrate to plasma generated in the chamber,
The plurality of rails are integrally held by a rail holding body disposed around the electrode body,
The rail holder is movable with the substrate so as to change a distance between the substrate and the electrode body,
When exposing the said board | substrate to the said plasma, the plasma processing method of arrange | positioning an insulating member so that the shortest path which connects the said rail holding body and the said electrode body may be interrupted.

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