JP2015082471A - Plasma processing device and plasma processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable plasma processing to be performed even to a substrate having a protruding portion on the lower surface side.SOLUTION: A plasma processing device performs plasma processing to a surface of a substrate 4 housed in a processing chamber. The plasma processing device includes: an electrode part 9 which is disposed at a bottom surface portion of a processing chamber 3, the electrode part 9 where an upper surface portion is formed by a placement part; and a support part including a lower surface part and side edge parts, which respectively guide lower surfaces and side edges of both side parts of the substrate 4, and forming a clearance between an upper surface of the placement part and the lower surface of the substrate 4.

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method.

  2. Description of the Related Art Conventionally, a plasma processing apparatus is known that includes a ceramic fixed support and a movable support that support both side ends of a substrate held on a ceramic mounting plate (see, for example, Patent Document 1). .

JP 2006-228773 A

  However, the plasma processing apparatus cannot be used for plasma processing of a substrate having a protruding portion on the lower surface side, such as mounting electronic components not only on the upper surface but also on the lower surface. That is, the mounting plate is flat, and if a substrate having a protruding portion on the lower surface side is placed on the mounting plate as it is, the protruding portion of the substrate contacts the upper surface of the mounting plate and is damaged.

  An object of the present invention is to enable plasma processing to be performed without damaging the protruding portion even if the substrate has a protruding portion on the lower surface side.

The first aspect of the present invention is:
A plasma processing apparatus for plasma processing the surface of a substrate housed in a processing chamber,
An electrode portion disposed on a bottom surface portion of the processing chamber, and an upper surface portion including a placement portion;
A support part that has a lower surface part and a side edge part that respectively guide a lower surface and a side edge of both sides of the substrate, and that forms a gap between the upper surface of the mounting part and the lower surface of the substrate;
A plasma processing apparatus comprising:

  With this configuration, the support portion can support both sides of the substrate to form a predetermined gap between the upper surface of the mounting portion and the lower surface of the substrate, so that the substrate has a protruding portion from the lower surface. However, it can be carried in and subjected to plasma treatment.

  It is preferable that at least one of the support portions is composed of a separate support member made of a ceramic material.

  With this configuration, the shape of the upper surface of the placement portion can be flat at least in the region where the support member is disposed.

  It is preferable that the support member that constitutes the one support portion can adjust the interval with respect to the other support portion.

  With this configuration, by changing the position of the support member, even if the substrates have different width dimensions, the protruding portion from the lower surface can be supported without causing interference with the placement portion.

  The support part preferably has an upper surface part that covers the upper side of both side parts of the substrate to be placed.

  With this configuration, the substrate can be prevented from being displaced when processing is performed on a substrate having a large warpage. Thereby, the support state of the substrate is stabilized, and the substrate can be smoothly carried into and out of the processing chamber.

  The gap between the substrate and the mounting portion may be an interval at which an interference between the protruding portion of the substrate and the electrode portion can be avoided and no abnormal discharge occurs between the substrate and the electrode portion.

The second aspect of the present invention is:
In the plasma processing apparatus,
Carrying the substrate into the processing chamber;
The lower surface and side edges of both sides of the loaded substrate are supported by the lower surface and side edges of the support part,
A plasma processing method for plasma processing a substrate by generating plasma in the processing chamber is provided.

  According to the present invention, since the support portion made of a ceramic material is provided on the electrode portion, even a substrate having a protruding portion on the lower surface side can be accommodated in the processing chamber and subjected to plasma processing.

It is a perspective view of the plasma processing apparatus which concerns on this embodiment. It is sectional drawing of FIG. (A) And (b) is the partial cross section figure which abbreviate | omitted the part which shows the state where the support member was moved corresponding to the board | substrate where width dimensions differ.

  Embodiments according to the present invention will be described below with reference to the accompanying drawings. In the following description, terms indicating specific directions and positions (for example, terms including “up”, “down”, “side”, “end”) are used as necessary. Is for facilitating understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meaning of these terms. Further, the following description is merely illustrative in nature and is not intended to limit the present invention, its application, or its use.

  1 and 2 show a plasma processing apparatus according to the present embodiment. The plasma processing apparatus includes a base portion 1 and a lid member 2 disposed above and below the base portion 1, and plasma is applied to a substrate 4 carried into a processing chamber 3 formed by the base portion 1 and the lid member 2. Process.

  The base portion 1 is formed of a plate-like body having a rectangular shape in plan view, and both lower end portions are supported by the leg portions 5, respectively. The upper surface of the base portion 1 constitutes a flat base surface, and a recess 6 having a rectangular shape in plan view is formed in the central portion thereof. An opening 7 having a rectangular shape in plan view is formed at the center of the bottom surface of the recess 6. A seal member 8 is attached to the outer periphery of the recess 6.

  An electrode portion 9 is disposed inside the recess 6 and the opening 7 of the base portion 1. The electrode portion 9 includes a first conductive member 10, a second conductive member 11, a third conductive member 12, and a mounting plate 13.

  The first conductive member 10 is attached to the base portion 1 via an insulating member 14 having a rectangular hole communicating with the opening 7. The second conductive member 11 is attached to the central portion of the upper surface of the first conductive member 10 with a gap from the rectangular hole of the insulating member 14 and the inner surface of the opening 7, and is connected to the high frequency power supply unit 24. The third conductive member 12 is attached to the upper surface of the second conductive member 11 with a gap so as not to contact the bottom surface and the inner surface of the recess 6. The mounting plate 13 is made of a ceramic material or a metal material, is mounted on the upper surface of the third conductive member 12, and the upper surface is exposed in the processing chamber 3 described later.

  A step portion 15 is formed on one side of the upper surface of the mounting plate 13. The upper surface of the step portion 15 is a mounting surface, and the lower surface side edge of the substrate 4 is mounted. The height dimension of the step portion 15 is larger than the projecting dimension of the projecting portion on the lower surface side of the mounted substrate 4 (for example, an electronic component mounted on the lower surface), and there is an abnormality between the substrate 4 and the mounting plate 13. The value is such that no discharge occurs. Here, the above two conditions are satisfied by setting the height of the step portion 15 to 1 mm.

  A ceramic guide member 16 is disposed on the mounting surface of the step portion 15. The guide member 16 includes a side guide wall 17a that extends upward along the side edge of the substrate 4 and an upper end guide wall 17b that protrudes toward the substrate at the upper end (see FIG. 3A). The height of the side guide wall 17 a is larger than the thickness of the side edge of the substrate 4. The projecting dimension of the upper end guide wall 17b is 2 mm, and in the state where the guide member 16 is mounted on the mounting surface, a range of 2 mm from the inner edge is similarly secured on the mounting surface as a region where the substrate 4 can be mounted.

  A ceramic support member 18 is placed on the upper surface of the placement plate 13 on the side opposite to the stepped portion 15. The support member 18 includes a side guide wall 19, a lower end guide wall 20, and an upper end guide wall 21, and a guide groove 18 a that opens to the side surface is configured by these guide walls (see FIG. 3A). The height of the side guide wall 19 is larger than the thickness of the side edge of the substrate 4. The projecting dimensions of the lower end guide wall 20 and the upper end guide wall 21 are both 2 mm. Moreover, the thickness of the lower end guide wall 20 is 1 mm which is the same as the height of the step portion 15 of the mounting plate 13 described above.

  The guide member 16 and the support member 18 can be fixed at both ends of the mounting plate 13 at both ends. However, the fixing position of the support member 18 can be changed so that the distance from the guide member 16 can be adjusted. In the present embodiment, the step portion 15 of the mounting plate 13 and the lower end guide wall 20 of the support member 18 constitute a support portion of the present invention.

  A substrate carry-in portion 22 is disposed on one end side of the base portion 1, and a substrate carry-out portion 23 is disposed on the other end side. The substrate carry-in unit 22 and the substrate carry-out unit 23 are configured by a pair of conveyance rails arranged in parallel at a predetermined interval. The interval between the transfer rails can be changed, and the transfer of various substrates 4 having different width dimensions can be flexibly handled.

  The lid member 2 has a box shape with an open bottom surface, is grounded, and is lifted and lowered by a lifting means (not shown). The lid member 2 is loaded with the substrate 4 from the substrate carry-in portion 22 at the raised position, and is unloaded with the substrate 4 loaded from the substrate carry-out portion 23. Further, the lid member 2 forms a processing chamber 3 that is hermetically sealed by placing the lower end opening portion on the placement surface of the base portion 1, specifically the seal member 8, at the lowered position. Note that a vacuum exhaust device (not shown) for evacuating the sealed processing chamber 3 and a gas for introducing plasma generating gas into the processing chamber 3 are provided in the lid member 2 or the base portion 1. A supply device (not shown) is connected. The vacuum exhaust device and the gas supply device together with the high frequency power supply unit 24 serve as plasma generating means for generating plasma for plasma processing in the processing chamber 3.

  The substrate 4 is a thin resin substrate, and electronic components are mounted on both sides. For this reason, the electronic component protrudes not only from the upper surface of the substrate 4 but also from the lower surface. When processing such a substrate 4, if the entire surface is placed on a mounting plate 13 that is flat, the electronic component interferes with the mounting plate 13. However, in the case of this embodiment, as described above, the upper surface of the mounting plate 13 is formed with the step portion 15 on which one side edge portion of the substrate 4 is placed on one side portion, and the other side. A support member 18 on which the other side edge portion of the substrate 4 is placed is disposed on the portion. And the support member 18 can adjust now the space | interval with respect to the step part 15 freely. Therefore, by changing the position of the support member 18 in advance according to the width dimension of the substrate 4, even if the substrate 4 has a portion protruding to the lower surface side, both side portions thereof are provided with the step portion 15 and the support member. 18 to avoid interference with the mounting plate 13.

  Next, the operation of the plasma processing apparatus having the above configuration will be described.

  The lid member 2 is raised, and the substrate 4 is carried onto the placement plate 13 by the substrate carry-in portion 22. The substrate 4 is carried in while being guided by the guide member 16 provided on the step portion 15 of the mounting plate 13 and the support member 18 on both sides. The loaded substrate 4 is placed on the placement surface of the step portion 15 and the upper surface of the lower end guide wall 20 of the support member 18. In this state, one side edge of the substrate 4 is guided by the inner surface of the guide member 16 and the lower surface of the upper end guide wall 21, and the other side edge is guided by the inner surface of the support member 18 and the lower surface of the upper end guide wall 21. The Further, a predetermined gap (1 mm in this case) is formed between the upper surface (the portion excluding the step portion 15) of the mounting plate 13 and the lower surface of the substrate 4 by the step portion 15 and the lower end guide wall 20 of the support member 18. It is formed.

  If the board | substrate 4 is carried in, the cover member 2 will be lowered | hung and the seal member 8 will be press-contacted to the mounting surface of the base part 1. FIG. Thereby, the process chamber 3 will be in a sealed state. Here, the inside of the processing chamber 3 is evacuated by driving the vacuum exhaust device. When the evacuation is completed, the gas supply device is driven to supply the plasma generating gas into the processing chamber 3. In addition, a high frequency voltage is applied between the lid member 2 and the electrode unit 9 by the high frequency power supply unit 24. As a result, plasma is generated in the processing chamber 3 and the surface of the substrate 4 is subjected to plasma processing such as etching.

  Since the plasma treatment is performed on the thin resin substrate 4, there is a risk of deformation, but as described above, both sides of the substrate 4 are guided vertically and laterally by the guide member 16 and the support member 18. . Therefore, the flexible deformation of the substrate 4 is prevented, and the protruding portion from the lower surface of the substrate 4 interferes with the upper surface of the mounting plate 13 or the distance between the lower surface of the substrate 4 and the upper surface of the mounting plate 13 increases. Abnormal discharge does not occur. As a result, it is possible to prevent quality defects due to plasma processing.

  When the plasma processing is completed, an inert gas such as nitrogen gas or the atmosphere is introduced into the processing chamber 3, the pressure inside the processing chamber 3 is adjusted to atmospheric pressure, the lid member 2 is raised, and the substrate is carried out. The substrate 4 is unloaded through the unit 23.

  Next, when plasma processing is performed on the substrates 4 having different width dimensions, the width dimensions of the transport rails of the substrate carry-in portion 22 and the substrate carry-out portion 23 are changed, and FIGS. ), The position of the support member 18 is changed. Even by changing the positions of the transport rail and the support member 18, it is possible to flexibly cope with the substrate 4 having a different width dimension, and it is not necessary to separately prepare a mounting plate 13 having a different shape.

  In addition, this invention is not limited to the structure described in the said embodiment, A various change is possible.

  In the embodiment, the step portion 15 is formed on the upper surface of the mounting plate 13 and the movable support member 18 is provided on the opposite side. However, instead of the step portion 15, the second support member 18 ( It is also possible to provide (not shown). In this case, the entire upper surface of the mounting plate 13 can be made flat. Further, since the width dimension can be changed on both sides of the substrate 4 by the both support members 18, the processing chamber 3 can be set regardless of the difference in the width dimension of the substrate 4 by aligning the transport center of the substrate 4 with the center of the processing chamber 3. Plasma treatment can be performed at the central portion of the substrate.

  In the above-described embodiment, the support member 18 is configured such that the side guide wall 19, the upper end guide wall 20, and the lower end guide wall 21 are continuous in the conveyance direction of the substrate 4. As long as 21 is continuous, the upper end guide wall 20 may be discontinuous.

  In the above embodiment, the substrate 4 on which electronic components are mounted on both sides has been described. However, the substrate 4 may be any substrate 4 having a portion that protrudes downward from the lower surface side in a state of being carried into the processing chamber 3. The board | substrate 4 of the structure which one part protrudes from a lower surface may be sufficient.

DESCRIPTION OF SYMBOLS 1 ... Base part 2 ... Cover member 3 ... Processing chamber 4 ... Substrate 5 ... Leg part 6 ... Recess 7 ... Opening part 8 ... Seal member 9 ... Electrode part 10 ... 1st electrically-conductive member 11 ... 2nd electrically-conductive member 12 ... 1st 3 conductive member 13 ... mounting plate 14 ... insulating member 15 ... step 16 ... guide member 17a ... side guide wall 17b ... upper end guide wall 18 ... support member 18a ... guide groove 19 ... side guide wall 20 ... lower end guide wall 21 ... Upper end guide wall 22 ... Substrate carry-in part 23 ... Substrate carry-out part 24 ... High-frequency power supply part

Claims (6)

A plasma processing apparatus for plasma processing the surface of a substrate housed in a processing chamber,
An electrode portion disposed on a bottom surface portion of the processing chamber, and an upper surface portion including a placement portion;
A support part that has a lower surface part and a side edge part that respectively guide a lower surface and a side edge of both sides of the substrate, and that forms a gap between the upper surface of the mounting part and the lower surface of the substrate;
A plasma processing apparatus comprising:   The plasma processing apparatus according to claim 1, wherein at least one of the support portions is formed of a separate support member made of a ceramic material.   The plasma processing apparatus according to claim 2, wherein a distance between the support member and the other support portion is adjustable.   4. The plasma processing apparatus according to claim 1, wherein the support part has an upper surface part that covers an upper side of both side parts of the substrate to be placed. 5.   The gap between the substrate and the mounting portion is an interval that can avoid interference between the protruding portion of the substrate and the mounting portion, and does not cause abnormal discharge between the substrate and the mounting portion. The plasma processing apparatus of any one of Claim 1 to 4 characterized by these. In the plasma processing apparatus according to any one of claims 1 to 5,
Carrying the substrate into the processing chamber;
The lower surface and side edges of both sides of the loaded substrate are supported by the lower surface and side edges of the support part,
A plasma processing method, comprising: plasma processing a substrate by generating plasma in the processing chamber.

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