JP5995205B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method for irradiating a substrate with plasma and cleaning or etching the surface of the substrate.

  Plasma treatment is known as a surface treatment such as cleaning or etching of a substrate on which an electronic component is mounted. A plasma processing apparatus is known as an apparatus for performing such plasma processing. In a plasma processing apparatus, a substrate is disposed in a processing chamber (vacuum chamber) of a reduced pressure atmosphere surrounded by a casing, and plasma is generated by introducing gas and performing discharge in the processing chamber. Surface treatment of the substrate is performed by the etching action.

  Specifically, for example, in the plasma processing apparatus, an electrode body disposed on the back of the substrate so as to cover the entire back surface of the substrate is used as one pole, and the casing (particularly a lid disposed on the front surface side of the substrate) is used as the other. In this device, a substrate is subjected to surface treatment by applying a voltage as a pole of the substrate and exposing the surface of the substrate to plasma generated between a housing (lid body) and an electrode body.

  In order to perform this plasma treatment, a high voltage is applied between the electrode body and the housing (lid body), so that when a space is generated between the substrate and the electrode body, abnormal discharge occurs in the space. There are things to do. This abnormal discharge causes problems such as damage to the substrate and occurrence of insufficient processing such as cleaning and etching in the substrate.

  Therefore, the plasma processing apparatus described in Patent Document 1 suppresses the occurrence of abnormal discharge by arranging a guide member that holds the edge of the substrate in order to reduce the space generated between the electrode body and the substrate. doing.

JP 2006-228773 A

  When a plasma processing apparatus is incorporated in a production line, etc., a rail connected to a loader or unloader arranged outside the plasma processing apparatus is installed in the plasma processing apparatus in order to automatically carry the substrate in and out of the plasma processing apparatus. The board may be carried in and out by sliding the board along the rail.

  However, in the case of a substrate used recently, there is a case where a large warp has occurred, and if the rail is designed so as to allow the warp of the substrate, the substrate can be moved smoothly when the substrate is carried in and out. However, a wide space is generated in a part between the electrode body and the substrate. When the space between the substrate and the electrode body is increased, the probability of occurrence of abnormal discharge is increased, which causes a problem in plasma processing.

  The present invention has been made in view of the above problems, and even when the substrate that is the object of plasma processing is warped, the substrate can be easily carried in and out, and the substrate can be processed during the plasma processing. The object is to reduce the space generated between the electrode body and the electrode body.

  In order to achieve the above object, a plasma processing apparatus according to the present invention is provided in a housing that houses a substrate, an electrode body that is disposed behind the substrate that is housed in the housing, and the housing. A plasma processing apparatus comprising a plurality of rails for forming a substrate transport path and holding a substrate being processed, and plasma generating means for generating plasma in the housing, the plasma processing apparatus being arranged around the electrode body And holding the plurality of rails integrally with each other, and moving the holder relative to the portion of the housing insulated from the electrode body, thereby generating a plasma on the electrode body during plasma generation. Moving means for moving the rail toward the direction of pressing the edge of the substrate toward the substrate, and moving the rail in a direction of releasing the pressure on the edge of the substrate during transport of the substrate. And

  According to this, even when the substrate is greatly warped, the substrate can be smoothly carried in and out. Further, when performing plasma processing, the warp is returned to make the space between the substrate and the electrode body as much as possible. It becomes possible to make it narrow. Therefore, it is possible to suppress the occurrence of abnormal discharge and improve the plasma processing yield.

  Further, in order to move the plurality of rails integrally with the holding body disposed around the electrode body, a mechanism for moving the rails relative to the electrode body is disposed outside the space where the plasma is generated, and Since the number of places where the mechanisms are installed can be reduced, it is possible to suppress abnormal discharge or the like generated by these mechanisms.

  The housing includes a base body that holds the electrode body in an insulating state, and a lid body that opens and closes the housing by moving relative to the base body, and the moving means includes the lid body and There may be provided interlocking means for mechanically interlocking the relative movement between the base body and the relative movement between the holding body and the base body.

  The moving means further includes urging means for urging the holding body and the base body in a direction to release the pressure applied to the edge of the substrate by the rail, and the interlocking means includes the lid body and the base body. The holding body may be moved relative to the base body against the urging force of the urging means using a force generated when the two approaches.

  According to the above, it is not necessary to provide a driving source or a complicated driving mechanism in the vicinity of the electrode body to which a high voltage is applied, and the rail is relatively moved through the holding body, and the substrate is moved to the substrate. It is possible to press and release the press. Therefore, it is possible to suppress abnormal discharge that occurs due to a complicated mechanism.

  In order to achieve the above object, a plasma processing method according to the present invention includes a housing for accommodating a substrate, an electrode body disposed behind the substrate accommodated in the housing, and disposed in the housing. A plurality of rails that form a substrate transfer path and hold the substrate being processed; a holder that is disposed around the electrode body and integrally holds the plurality of rails; and plasma is generated in the housing. A plasma processing method for a plasma processing apparatus comprising a plasma generating means for generating, by moving the holding body relative to a portion of the casing insulated from the electrode body by a moving means, During the generation of plasma, the rail is moved in a direction to press the edge of the substrate toward the electrode body, and during the transfer of the substrate, the rail is moved in a direction to release the pressure on the edge of the substrate. And wherein the door.

  According to this, even when the substrate is greatly warped, the substrate can be smoothly carried in and out. Further, when performing plasma processing, the warp is returned to make the space between the substrate and the electrode body as much as possible. It becomes possible to make it narrow. Therefore, it is possible to suppress the occurrence of abnormal discharge and improve the plasma processing yield.

  Further, since the plurality of rails are integrally moved by the holding body arranged around the electrode body, the rail can be moved relative to the electrode body by a mechanism arranged outside the space where plasma is generated. Therefore, abnormal discharge or the like can be suppressed.

  Note that executing a program for causing a computer to execute each process included in the plasma processing method also corresponds to the implementation of the present invention. Of course, implementing the recording medium in which the program is recorded also corresponds to the implementation of the present invention.

  According to the present invention, the substrate can be smoothly carried in and out regardless of the state of warping of the substrate, and the occurrence of abnormal discharge during plasma processing can be suppressed.

FIG. 1 is a perspective view schematically showing the appearance of the plasma processing apparatus according to the embodiment. FIG. 2 is a perspective view schematically showing the plasma processing apparatus with the lid opened. FIG. 3 is a plan view schematically showing the plasma processing apparatus with the lid opened from above. FIG. 4 is a cross-sectional view of the plasma processing apparatus with the lid opened, schematically cut along line AA shown in FIG. FIG. 5 is a cross-sectional view of the plasma processing apparatus with the lid closed, schematically cut along the line AA shown in FIG. FIG. 6 is a perspective view schematically showing the holding body and the rail with the housing omitted. FIG. 7 is a perspective view schematically showing a mounting portion between the holding body and the rail.

  Next, embodiments of a plasma processing apparatus and a plasma processing method according to the present invention will be described with reference to the drawings. The following embodiments are merely examples of a plasma processing apparatus and a plasma processing method according to the present invention. Accordingly, the scope of the present invention is defined by the wording of the claims with reference to the following embodiments, and is not limited to the following embodiments. Therefore, among the constituent elements in the following embodiments, constituent elements that are not described in the independent claims indicating the highest concept of the present invention are not necessarily required to achieve the object of the present invention. It will be described as constituting a preferred form.

  FIG. 1 is a perspective view schematically showing the appearance of the plasma processing apparatus according to the embodiment.

  FIG. 2 is a perspective view schematically showing the plasma processing apparatus with the lid opened.

  FIG. 3 is a plan view schematically showing the plasma processing apparatus with the lid opened from above.

  FIG. 4 is a cross-sectional view of the plasma processing apparatus with the lid opened, schematically cut along line AA shown in FIG.

  FIG. 5 is a cross-sectional view of the plasma processing apparatus with the lid closed, schematically cut along the line AA shown in FIG.

  As shown in these drawings, a plasma processing apparatus 100 is an apparatus that irradiates plasma on the surface of a substrate 200 as an object to be processed, and performs plasma processing such as cleaning and etching on the surface of the substrate 200. 101, an electrode body 102, a rail 103, a holding body 130, a plasma generating power supply unit 104, and a moving unit 105.

  The plasma processing apparatus 100 includes a vacuum suction means such as a vacuum pump that evacuates the inside of the housing 101, a gas supply means that introduces plasma processing gas into the housing 101, and the like. Omitted. Further, the plasma processing apparatus 100 includes an external rail 139 for carrying the substrate 200 into the housing 101 and carrying the substrate 200 in the housing 101 out of the housing 101.

  The vacuum suction means includes a vacuum exhaust pipe, a vacuum valve, a pressure adjustment valve, and the like that connect the vacuum pump and the housing 101.

  The gas supply means includes a gas cylinder such as argon or nitrogen and a gas introduction pipe connected to the housing 101.

  In the case of the present embodiment, the plasma processing apparatus 100 irradiates the bonding pad provided on the substrate 200 with plasma in order to improve the bonding strength between the bonding pad and the bonding wire, for example, when the bare chip is directly wire bonded. This is a device for cleaning.

  The housing 101 is a vacuum container that can accommodate the substrate 200 and can maintain the space accommodating the substrate 200 in a vacuum, and includes a base 111 and a lid 112 provided above the base 111. .

  The base 111 is a container in which the electrode body 102 and the rail 103 are accommodated, and has sufficient rigidity as a vacuum container. The base 111 holds the electrode body 102 in an insulated state by an insulating member 113 (see FIG. 4).

  The lid body 112 is a lid (or door) that can open and close the housing 101 by moving relative to the base body 111 by an opening / closing mechanism (not shown), and has sufficient rigidity as a vacuum container. Further, the lid body 112 is configured to be movable forward and backward with respect to the base body 111 by a driving source (not shown) such as a motor. That is, when the substrate 200 is loaded into the casing 101 or when the substrate 200 is unloaded from the casing 101, the lid body 112 is lifted with respect to the base 111, and when performing plasma treatment, The lid 112 is lowered until the lid 112 abuts. Note that a sealing member 114 such as an O-ring is interposed between the base 111 and the lid 112 in order to maintain the airtightness of the housing 101.

  The lid 112 also functions as an electrode when performing plasma processing. That is, when a voltage is applied between the lid body 112 and the electrode body 102, plasma is generated between the lid body 112 and the electrode body 102. In the case of the present embodiment, the lid body 112 is grounded.

  The electrode body 102 is a member that functions as one electrode for generating plasma in the housing 101, and is a plate-shaped (block-shaped) member formed of a conductive material such as metal, for example. In the case of the present embodiment, the electrode body 102 is placed on the base body 111 via an insulating member 113 and is in an insulated state not only from the base body 111 but also from the casing 101 including the lid body 112. .

  In the present embodiment, a mounting plate 138 is disposed above the electrode body 102. The mounting plate 138 is a plate-shaped (block-shaped) member on which the substrate 200 is mounted, and is a member that reduces the space between the substrate 200 and the electrode body 102 when performing plasma processing. Further, when the substrate 200 is carried in and out, the placement plate 138 forms a conveyance path for the substrate 200, and the substrate 200 may move while sliding. The material of the mounting plate 138 may be a conductor or an insulator, for example, one made of metal or one made of ceramic.

  Further, in the case of the present embodiment, as shown in FIGS. 4 and 5, the mounting plate 138 is provided with a groove 134 that allows the rail 103 to move up and down. When the rail 103 enters the groove 134 of the mounting plate 138, the warp of the substrate 200 is corrected, the space generated on the back of the substrate 200 is reduced as much as possible, and abnormal discharge is suppressed.

  As described above, by providing the mounting plate 138 separate from the electrode body 102, it is possible to flexibly cope with the type of the substrate 200 only by replacing the mounting plate 138. Instead of providing the groove 134 in the mounting plate 138, a plurality of belt-like (long plate-like) members may be arranged on a flat plate member, and the groove 134 may be formed between the belt-like members.

  Further, the electrode body 102 and the mounting plate 138 may be integrated and function as the electrode body 102 as a whole.

  In the case of the present embodiment, the plasma processing apparatus 100 includes a vacuum suction means (not shown) for exhausting air inside the casing 101 and a gas supply means (see FIG. Not shown).

  The vacuum suction means is formed in a sealed space formed by the lid body 112 coming into contact with the base body 111 by discharging air from an exhaust port 119 that opens to the inside surrounded by the seal member 114 of the base body 111 (the casing 101. This is a device that reduces the pressure in the inside) to a vacuum state.

  The gas supply means is connected to a gas introduction port (not shown) provided on the inner side of the base body 111 or the lid 112 surrounded by the seal member 114, and introduces a plasma generating gas into the housing 101. It is a device to do.

  The plasma generating power supply unit 104 is a device that generates plasma by applying a voltage between the electrode body 102 and the lid body 112. In the case of the present embodiment, the plasma generating power supply unit 104 applies a high frequency voltage between the electrode body 102 and the lid body 112 and a high frequency power supply section 141 that applies a high frequency voltage between the electrode body 102 and the lid body 112. And an automatic matching unit 142 for preventing interference due to high-frequency reflected waves.

  The above-described vacuum suction means, gas supply means, and plasma generation power supply unit 104 constitute plasma generation means in the present embodiment.

  FIG. 6 is a perspective view schematically showing the holding body and the rail with the housing omitted.

  FIG. 7 is a perspective view schematically showing a mounting portion between the holding body and the rail.

  As shown in these drawings, the holding body 130 is a member that is disposed around the electrode body 102 and integrally holds the plurality of rails 103. In the case of the present embodiment, the holding body 130 is a rectangular annular member disposed so as to surround the rectangular electrode body 102, and the rail 103 is held by the holding body 130 in a bridged state and a mounted state. As the holder 130 moves up and down, the rail 103 also moves up and down with respect to the electrode body 102. Specifically, the holding body 130 is provided with a protrusion 137 that protrudes upward, and the end of the rail 103 is placed on the protrusion 137.

  Further, a pin 136 extending in the vertical direction (Z-axis direction in the figure) is attached to the projecting portion 137, and by engaging the rail 103 with the pin 136, the vertical direction (Z-axis direction in the figure). The position of the rail 103 in the horizontal plane (XY plane in the figure) is regulated while allowing the relative movement of the rail 103 with respect to the holding body 130 in FIG. In addition, a regulating member 135 is screwed to the holding body 130. The regulating member 135 is an inverted L-shaped member having a portion arranged on the upper surface side of the rail 103 so that the rail 103 is not too far from the holding body 130 in the vertical direction (Z-axis direction in the drawing).

  As described above, the rail 103 made of a relatively fragile material such as ceramics can be arranged on the holding body 130 without being fastened.

  Further, some of the protrusions 137 provided in the holding body 130 are detachable from the main body of the holding body 130 and can be shifted in position relative to the main body. Thereby, the space | interval of the rail 103 attached to the protrusion part 137 can be adjusted, and it can respond to the kind of board | substrate 200 flexibly.

  In addition, in order to make the upper surface of the rail 103 and the upper surface of the regulating member 135 flush or almost flush with each other, a portion of the rail 103 that engages with the regulating member 135 is partially cut away. As a result, it is possible to avoid as much as possible that the small protruding portion is exposed to the plasma and to suppress the occurrence of abnormal discharge.

  The holding body 130 includes through holes (not shown) through which a columnar shaft 133 attached to the base body 111 in an upright state is inserted (provided at four places in the case of the present embodiment), and the shaft It can move in the vertical direction (Z-axis direction) along 133.

  The rail 103 is a member that forms a transport path A (see FIG. 2) when the substrate 200 is carried in and out, and presses the edge of the substrate 200 toward the electrode body 102 when performing plasma processing. It is a member. In addition, the rail 103 extends over the entire inside of the housing 101 in the conveyance direction of the substrate 200 (X-axis direction in the drawing), and is interposed via the holding body 130 so as to be movable back and forth with respect to the electrode body 102. It is attached to the base 111. Since the rail 103 is exposed to plasma during plasma processing, an insulator having high hardness such as ceramics is preferable.

  In the case of the present embodiment, the rail 103 includes a flange portion 131 that protrudes toward the conveyance path of the substrate 200, and a sliding portion 132 that protrudes below the flange portion 131 in the same manner as the flange portion 131.

  The collar 131 is disposed on the opposite side of the electrode body 102 with respect to the edge in the direction (Y-axis direction in the drawing) intersecting the transport path of the substrate 200 both during transport of the substrate 200 and during plasma processing. And is a portion protruding so as to overlap the edge of the substrate 200. The flange 131 extends over the entire inside of the housing 101 in the transport direction of the substrate 200 (X-axis direction in the drawing). In addition, the collar 131 is configured so that the electrode body 102 (in the case of the present embodiment, the mounting plate 138) during the transport of the substrate 200 (when the cover body 112 is separated from the base body 111 and the housing 101 is opened). ) Is disposed above the upper end surface, and during plasma generation (when the lid body 112 is in contact with the base body 111 and the housing 101 is closed), the electrode body 102 (in this embodiment) In this case, the upper end surface of the mounting plate 138) and the lower end surface of the flange 131 are in a state of approaching the thickness of the substrate 200.

  As described above, the edge of the substrate 200 can be pressed toward the electrode body 102, and the warpage of the substrate 200 can be corrected to prevent generation of a space between the electrode body 102 and the substrate 200.

  The sliding portion 132 is in a state in which the rail 103 is lifted by the holding body 130 while the substrate 200 is being carried in and out, and is above the upper end surface of the electrode body 102 (the mounting plate 138 in this embodiment). It is a part which is arrange | positioned and supports the edge of the board | substrate 200 from the downward direction, and is a part which the edge of the board | substrate 200 slides. Further, the sliding portion 132 is in a state where the rail 103 is lowered by the holding body 130 during the plasma processing, and is disposed below the upper end surface of the electrode body 102 (the mounting plate 138 in this embodiment). The

  As described above, during the transfer of the substrate 200, the substrate 200 can be smoothly transferred to and from the external rail 139. During the generation of plasma, the edge of the substrate 200 is pressed downward, thereby causing abnormalities. It is possible to reduce the space in which discharge occurs.

  The moving means 105 moves the holding body 130 toward the base body 111 which is a part of the housing 101 during plasma generation (in a state where the base body 111 and the lid body 112 are in contact with each other and the housing 101 is closed). By moving, the rail 103 is moved in the direction of the base body 111, and the edge of the substrate 200 is pressed in the direction of the electrode body 102 by the flange 131. Further, the moving means 105 moves the holding body 130 from the base body 111 which is a part of the housing 101 while the substrate 200 is being transported (in a state where the base body 111 and the lid body 112 are separated and the housing 101 is opened). This is a mechanism for moving the rail 103 away from the base body 111 to release the pressing by the flange 131 at the edge of the substrate 200 by moving away from the base body 111.

  The moving means 105 positions the rail 103 at a descending height approaching the electrode body 102 during plasma generation (when the base body 111 and the lid body 112 are in contact with each other and the housing 101 is closed). Further, during the transportation of the substrate 200 (the state where the base body 111 and the lid body 112 are separated and the housing 101 is opened), the substrate transportation height (the substrate of the external rail 139) where the rail 103 is separated from the electrode body 102. The height is the same as the transport height.

  In the case of the present embodiment, the moving means 105 is an interlocking means for mechanically interlocking the relative movement between the lid body 112 and the base body 111 and the relative movement between the holding body 130 and the base body 111 driven by an opening / closing mechanism (not shown). 151 and an urging means 152 that urges the holding body 130 in a direction in which the holding body 130 and the base body 111 are separated from each other.

  The holding body 130 is urged upward by the urging means 152, but the rising height of the holding body 130 is regulated by the large diameter portion provided at the upper end portion of the shaft 133. By restricting the rising height in this way, the rail 103 can be accurately stopped at the board conveyance height by the biasing means 152.

  The interlocking unit 151 resists the urging force of the urging unit 152 using a force generated when the lid body 112 and the base body 111 approach each other by an opening / closing mechanism (not shown), and relatively moves the holding body 130 toward the base body 111. This is a mechanism for moving, and the plurality of rails 103 can be moved together toward the base 111 as a unit.

  Specifically, the interlocking means 151 is a columnar rigid member that is fixed to the inner surface of the side wall of the lid body 112. When the lid body 112 approaches the base body 111 by an unillustrated opening / closing mechanism, a part of the upper surface of the holding body 130 is obtained. The tip of the interlocking means 151 comes into contact with the rail 103, and thereafter, the rail 103 is pushed down via the holding body 130 in conjunction with the movement of the lid 112 (see FIG. 5).

  The biasing means 152 is a device that biases the holding body 130 in a direction to release the pressing of the edge of the substrate 200 by the rail 103, and thus biases the rail 103. In the case of the present embodiment, the urging means 152 is interposed between the base body 111 and the holding body 130, and always urges the holding body 130 away from the base body 111, and the rail 103 serves as the electrode body 102. (In the case of the present embodiment, the rail 103 is urged through the holding body 130 in a direction protruding from the upper end surface of the mounting plate 138).

  The plasma processing apparatus 100 configured as described above performs plasma processing as follows.

  First, in a state where the housing 101 is opened (see FIGS. 2 and 4), the urging means 152 functions in the direction of pushing up the rail 103 via the holding body 130, and slides on the upper end surface of the external rail 139. The upper end surface of the part 132 is disposed in the same plane. In this state, the substrate 200 is slid along the external rail 139 and the rail 103 by a loader such as a pusher, and is carried into the housing 101.

  In this loading step, for example, even when the substrate 200 is warped (see FIG. 4), since the edge of the substrate 200 is not pressed toward the electrode body 102, the substrate 200 can be loaded smoothly. it can.

  Next, the lid body 112 is moved in the direction of the base body 111 to close the housing 101. When the lid body 112 approaches the base body 111, the moving means 105 contacts the holding body 130 with the tip of the interlocking means 151 attached to the lid body 112, and moves the holding body 130 in conjunction with the movement of the lid body 112. Press down. Along with this, the rail 103 also descends toward the base 111. Then, the flange 131 of the rail 103 comes into contact with the edge of the substrate 200 and is pushed down until the edge of the substrate 200 contacts the upper surface of the mounting plate 138 (electrode body 102) (state shown in FIG. 5).

  As described above, the rail 103 and the mounting plate 138 (electrode body 102) are relatively moved so that the substrate 200 and the mounting plate 138 (electrode body 102) are brought into contact with each other before plasma generation, and the mounting plate 138 is moved. A space between the (electrode body 102) and the substrate 200 can be reduced.

  In the above state, since the housing 101 is in a sealed state, the inside of the housing 101 is evacuated using vacuum suction means.

  Next, when a predetermined vacuum state is reached, a gas generating means introduces a plasma generating gas such as argon into the housing 101, and the plasma generating power source 104 connects the electrode body 102 and the lid body. A high frequency voltage is applied between them. As a result, a high frequency voltage is applied to the plasma generating gas introduced to the inside of the casing 101, and plasma is generated in the casing 101. Then, the plasma generated in the housing 101 is irradiated on the surface of the substrate 200 to clean the surface of the substrate 200.

  When the cleaning with plasma is completed, the inside of the housing 101 is opened to the atmosphere, and the lid 112 is moved away from the base body 111 by a driving source in order to open the housing 101. As described above, the interlocking unit 151 is lifted with the movement of the lid body 112, and the holding body 130 advances relatively upward with respect to the base body 111 by the urging force of the urging means 152. Along with this, the rail 103 also rises, and the upper end surface of the external rail 139 and the upper end surface of the sliding portion 132 are arranged in the same plane. Thereafter, the substrate 200 is carried out while sliding with respect to the sliding portion 132 and the external rail 139.

  As described above, when the substrate 200 is carried in / out, the substrate 200 is not pressed against the placement plate 138 (electrode body 102), so that the substrate 200 can be carried in / out smoothly. Further, when plasma processing is performed, the edge of the substrate 200 is pressed toward the mounting plate 138 (electrode body 102) to allow as much space as possible between the mounting plate 138 (electrode body 102) and the substrate 200. Can be reduced.

  Since the vertical movement of the rail 103 is realized by the holding body 130 arranged in the space around the electrode body 102 and the moving means 105, the plasma generated between the electrode body 102 and the lid body 112 is generated. Can be reduced as much as possible.

  In addition, since a holding body 130, a biasing means 152, a shaft 133, and the like, which are mechanisms for moving the rail 103 up and down, can be provided on the base body 111 insulated from the electrode body 102, a conductor such as metal can be selected as a material. In addition, processing and mounting can be easily performed.

  Furthermore, since the vertical movement of the rail 103 is interlocked with the vertical movement of the lid body 112, it is not necessary to arrange a driving source or a driving mechanism inside the housing 101, and the rail 103 can be moved up and down with a simple configuration. It becomes possible.

  In addition, this invention is not limited to the said embodiment. For example, another embodiment realized by arbitrarily combining the components described in this specification and excluding some of the components may be used as an embodiment of the present invention. In addition, the present invention includes modifications obtained by making various modifications conceivable by those skilled in the art without departing from the gist of the present invention, that is, the meaning described in the claims. It is.

  For example, although the moving unit 105 has been described as interlocking with the movement of the lid 112 or the like, the moving unit 105 may be configured to move the holding body 130 and the base body 111 relatively independently. For example, a device that moves the holding body 130 with respect to the base 111 using an air actuator can be listed.

  In the above embodiment, the plasma processing apparatus 100 has been described as being intended for cleaning the substrate with plasma. However, for the purpose of forming a via hole or the like in the substrate 200, the substrate is etched using plasma. A dry etching apparatus or the like that performs the above process may be used.

  The present invention can be applied to a plasma processing apparatus and a plasma processing method, and is particularly applicable to a plasma processing apparatus and a plasma processing method for performing plasma processing on a warped substrate or a substrate having a protrusion on the back surface.

DESCRIPTION OF SYMBOLS 100 Plasma processing apparatus 101 Case 102 Electrode body 103 Rail 104 Plasma generation power supply part 105 Moving means 111 Base body 112 Cover body 113 Insulation member 114 Seal member 130 Holding body 131 Gutter part 132 Sliding part 133 Shaft 134 Groove 135 Restriction member 136 Pin 137 Protruding part 138 Mounting plate 139 External rail 151 Interlocking means 152 Energizing means 200 Substrate

Claims (4)

A housing that accommodates the substrate, an electrode body that is disposed behind the substrate that is accommodated in the housing, and a plurality that is disposed within the housing, forms a substrate transport path, and holds the substrate being processed. A plasma processing apparatus comprising a rail and a plasma generating means for generating plasma in the housing,
A holding body disposed around the electrode body and integrally holding the plurality of rails;
By moving the holding body relative to the portion of the casing that is insulated from the electrode body, during the plasma generation, the rail is moved in the direction of pressing the edge of the substrate toward the electrode body. A plasma processing apparatus comprising: a moving unit that moves the rail in a direction to release the pressure applied to the edge of the substrate during transfer of the substrate. The housing includes a base body that holds the electrode body in an insulated state, and a lid body that opens and closes the housing by moving relative to the base body.
The plasma processing apparatus according to claim 1, wherein the moving means includes interlocking means for mechanically interlocking relative movement between the lid body and the base body and relative movement between the holding body and the base body. The moving means further includes
Urging means for urging the holding body and the base body in a direction to release the pressing by the rail to the edge of the substrate;
The interlocking means is
The plasma processing apparatus according to claim 2, wherein the holding body is moved relative to the base body against a biasing force of the biasing means using a force generated when the lid body and the base body approach each other. . A housing that accommodates the substrate, an electrode body that is disposed behind the substrate that is accommodated in the housing, and a plurality that is disposed within the housing, forms a substrate transport path, and holds the substrate being processed. A plasma processing method for a plasma processing apparatus, comprising: a plurality of rails; a holder disposed around the electrode body; and a holder for integrally holding the plurality of rails; and plasma generating means for generating plasma in the housing. And
By moving the holding body relative to the portion of the casing that is insulated from the electrode body by means of moving means, in the direction of pressing the edge of the substrate toward the electrode body during plasma generation A plasma processing method, wherein the rail is moved, and the rail is moved in a direction to release the pressure applied to an edge of the substrate while the substrate is being transported.

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