JPH0952792A - Substrate holder of apparatus for growing semiconductor - Google Patents
Substrate holder of apparatus for growing semiconductorInfo
- Publication number
- JPH0952792A JPH0952792A JP20552995A JP20552995A JPH0952792A JP H0952792 A JPH0952792 A JP H0952792A JP 20552995 A JP20552995 A JP 20552995A JP 20552995 A JP20552995 A JP 20552995A JP H0952792 A JPH0952792 A JP H0952792A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- substrate holder
- placing part
- contact
- mounting portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体成長装置の
成長室内の所定位置に処理対象の基板を保持するための
基板ホルダに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holder for holding a substrate to be processed at a predetermined position in a growth chamber of a semiconductor growth apparatus.
【０００２】[0002]
【従来の技術】砒化ガリウム等の化合物半導体を用いた
半導体素子の製造には、分子線エピタキシャル法（ＭＢ
Ｅ法）や有機金属気相成長（ＭＯＶＰＥ）法等を用いた
結晶成長工程を必要とする場合が多い。図８はＭＢＥ半
導体成長装置の一例を示す構成図である。2. Description of the Related Art A semiconductor device using a compound semiconductor such as gallium arsenide is manufactured by molecular beam epitaxy (MB
In many cases, a crystal growth step using the E method) or the metal organic chemical vapor deposition (MOVPE) method is required. FIG. 8 is a block diagram showing an example of an MBE semiconductor growth apparatus.
【０００３】成長室１０１は中空のタンク状の構造を有
し、内面には余分なガスを吸着するための冷却を行う液
体窒素シュラウド１０２が配設され、下部には蒸発源で
あるクヌードセンセル１０３が設けられ、その上部には
クヌードセンセルシャッター１０４が設けられている。
また、クヌードセンセル１０３の下部には成長室１０１
内を高真空にするための真空ポンプ１０５が設置されて
いる。更に、成長室１０１の側壁の一部には、ゲートバ
ルブ１０６が設けられている。The growth chamber 101 has a hollow tank-like structure, a liquid nitrogen shroud 102 for cooling to adsorb excess gas is provided on the inner surface, and a knudsen, which is an evaporation source, is provided at the lower part. A cell 103 is provided, and a Knudsen cell shutter 104 is provided above the cell 103.
The growth chamber 101 is provided below the Knudsen cell 103.
A vacuum pump 105 is installed to create a high vacuum inside. Further, a gate valve 106 is provided on a part of the side wall of the growth chamber 101.
【０００４】成長室１０１の中央部には、成長に用いら
れる砒化ガリウム基板１０７を保持する基板ホルダ１０
８、及び基板ホルダ１０８上の砒化ガリウム基板１０７
を裏面側から加熱するためのヒータ１０９が配設されて
いる。基板ホルダ１０８はタングステン（Ｗ）、モリブ
デン（Ｍｏ）、タンタル（Ｔａ）等を用いて作られ、駆
動装置１０８ａによって回転させることができる。At the center of the growth chamber 101, a substrate holder 10 holding a gallium arsenide substrate 107 used for growth.
8 and the gallium arsenide substrate 107 on the substrate holder 108
A heater 109 is provided to heat the back side of the sheet. The substrate holder 108 is made of tungsten (W), molybdenum (Mo), tantalum (Ta), or the like, and can be rotated by the driving device 108a.
【０００５】ゲートバルブ１０６には、砒化ガリウム基
板１０７を搬入／搬出するための通路及び退避場所とな
る中空構造の搬送室１１０が連結され、この搬送室１１
０には搬送室真空ポンプ１１１が連結されている。更
に、ゲートバルブ１１２を介して中空構造の導入室１１
３が連結され、この導入室１１３には導入室真空ポンプ
１１４が連結されている。また、導入室１１３の中心線
上には円板状の基板導入用フランジ１１５が着脱自在に
取り付けられ、この中心部にはトランスファロッド１１
６が水平移動可能に配設されており、その先端部に砒化
ガリウム基板１０７を装着することができる。The gate valve 106 is connected to a transfer chamber 110 having a hollow structure, which serves as a passage and an evacuation place for loading / unloading the gallium arsenide substrate 107.
A vacuum pump 111 for the transfer chamber is connected to 0. Further, the introduction chamber 11 having a hollow structure is provided through the gate valve 112.
3 is connected, and an introduction chamber vacuum pump 114 is connected to the introduction chamber 113. A disk-shaped substrate introduction flange 115 is detachably attached to the center line of the introduction chamber 113, and the transfer rod 11 is attached to the center of the flange 115.
6 is arranged so as to be horizontally movable, and a gallium arsenide substrate 107 can be mounted on the tip portion thereof.
【０００６】このような半導体成長装置にあっては、真
空ポンプ１０５によって成長室１０１内を超高度の真空
にし、また、成長室１０１内に不純物が入り込まないよ
うにする必要がある。そこで、外部から基板を搬入又は
搬出する場合には、搬送室１１０及び導入室１１３を真
空にし、砒化ガリウム基板１０７を段階的に搬送するよ
うにしている。In such a semiconductor growth apparatus, it is necessary to make the inside of the growth chamber 101 a very high vacuum by the vacuum pump 105 and to prevent impurities from entering the growth chamber 101. Therefore, when the substrate is loaded or unloaded from the outside, the transfer chamber 110 and the introduction chamber 113 are evacuated, and the gallium arsenide substrate 107 is transferred stepwise.
【０００７】外部から砒化ガリウム基板１０７を挿入す
る場合、まず、基板導入用フランジ１１５を外し、トラ
ンスファロッド１１６の先端部に砒化ガリウム基板１０
７を装着した後、基板導入用フランジ１１５を閉じる。
ついで導入室１１３内を導入室真空ポンプ１１４によっ
て真空にし、また、搬送室１１０を搬送室真空ポンプ１
１１で真空にする。この状態でゲートバルブ１１２を開
けて搬送室１１０まで砒化ガリウム基板１０７を搬入
し、ゲートバルブ１１２を閉める。更に、ゲートバルブ
１０６を開け、トランスファロッド１１６を移動させ、
砒化ガリウム基板１０７を成長室１０１内の基板ホルダ
１０８の直下まで搬入する。ここで、砒化ガリウム基板
１０７を基板ホルダ１０８に移し替え、トランスファロ
ッド１１６を後退させ、ゲートバルブ１０６を閉じる。When the gallium arsenide substrate 107 is inserted from the outside, first, the substrate introducing flange 115 is removed, and the gallium arsenide substrate 10 is attached to the tip of the transfer rod 116.
After mounting 7, the substrate introducing flange 115 is closed.
Then, the introduction chamber 113 is evacuated by the introduction chamber vacuum pump 114, and the transfer chamber 110 is evacuated.
Apply a vacuum at 11. In this state, the gate valve 112 is opened, the gallium arsenide substrate 107 is loaded into the transfer chamber 110, and the gate valve 112 is closed. Further, the gate valve 106 is opened, the transfer rod 116 is moved,
The gallium arsenide substrate 107 is carried into the growth chamber 101 just below the substrate holder 108. Here, the gallium arsenide substrate 107 is transferred to the substrate holder 108, the transfer rod 116 is retracted, and the gate valve 106 is closed.
【０００８】更に、真空ポンプ１０５によって成長室１
０１内を１０10Ｔorr 程度の高真空に保ち、ヒータ１０
９に通電して輻射熱により砒化ガリウム基板１０７を加
熱する。ここでクヌードセンセルシャッター１０４を開
け、クヌードセンセル１０３からＧａとＡｓを個別に蒸
発させ、加熱した砒化ガリウム基板１０７の表面に堆積
させ、エピタキシャル成長を行う。すなわち、砒化ガリ
ウム基板１０７にＧａ原子とＡｓ分子が到達すると、最
初にＧａ原子が吸着し、その後にＡｓ4 分子が付着し、
砒化ガリウム基板１０７の表面にＧａＡｓ層が形成され
る。基板の搬出については、搬入時と逆の手順により行
われる。Further, the growth chamber 1 is driven by the vacuum pump 105.
The inside of 01 is kept at a high vacuum of about 10 10 Torr, and the heater 10
9 is energized to heat the gallium arsenide substrate 107 by radiant heat. Here, the Knudsen cell shutter 104 is opened, Ga and As are evaporated from the Knudsen cell 103 separately, and deposited on the surface of the heated gallium arsenide substrate 107 to perform epitaxial growth. That is, when Ga atoms and As molecules reach the gallium arsenide substrate 107, Ga atoms are first adsorbed and then As 4 molecules are attached,
A GaAs layer is formed on the surface of the gallium arsenide substrate 107. The unloading of the substrate is performed in the reverse order of the loading.
【０００９】図９は基板ホルダ１０８の周辺構成を示す
断面図である。また、図１０は基板ホルダ１０８の拡大
断面図を示している。“Ｌ”字形の断面形状を有する基
板ホルダ１０８の底部には、円板状の基板ホルダ支持具
１１７が取り付けられ、この基板ホルダ支持具１１７の
周辺の下面の複数箇所には、凹部１１８及びこの凹部１
１８より小径の貫通孔１１９が形成されている。この貫
通孔１１９にはモリブデン製のねじ１２０が下側から挿
通され、基板ホルダ支持具１１７の上側に立設された基
板ホルダ支持具用支柱１２１を固定している。FIG. 9 is a sectional view showing the peripheral structure of the substrate holder 108. Further, FIG. 10 shows an enlarged sectional view of the substrate holder 108. A disk-shaped substrate holder support 117 is attached to the bottom of the substrate holder 108 having an “L” -shaped cross-sectional shape, and the recesses 118 and the recesses 118 are formed at a plurality of locations on the lower surface around the substrate holder support 117. Recess 1
A through hole 119 having a smaller diameter than 18 is formed. A screw 120 made of molybdenum is inserted from the lower side into the through hole 119, and a column 121 for the substrate holder supporting tool which is erected on the upper side of the substrate holder supporting tool 117 is fixed.
【００１０】[0010]
【発明が解決しようとする課題】しかし、上記した従来
技術にあっては、図１０に示す様に、砒化ガリウム等の
化合物半導体結晶では、基板結晶と基板ホルダ材料（例
えば、モリブデン等）との熱膨張率が大きく異なるた
め、成長終了後、搬送温度まで降温するに際し、１００
℃／ｍｉｎ程度の高速で冷却すると、基板周囲にスリッ
プラインが生じやすい。このスリップラインは、基板表
面の〔１１０〕方向に発生しやすい。そして、スリップ
ラインが生じると、基板が割れやすくなり、後のプロセ
ス工程が通らなくなり、歩留りを低下させる。However, in the above-mentioned conventional technique, as shown in FIG. 10, in the case of a compound semiconductor crystal such as gallium arsenide, a substrate crystal and a substrate holder material (for example, molybdenum) are used. Since the coefficient of thermal expansion is greatly different, when the temperature is lowered to the transfer temperature after the growth is completed,
When cooled at a high speed of about ° C / min, slip lines are likely to occur around the substrate. This slip line is likely to occur in the [110] direction on the substrate surface. Then, when the slip line is generated, the substrate is easily cracked, the subsequent process steps cannot be performed, and the yield is reduced.
【００１１】なお、気相成長やエピタキシャル成長にお
ける基板又はウェハの保持に関する技術には、例えば、
特開平３−１２６８７５号公報、特開平３−１９９１９
６号公報、特開平４−５０１９５号公報、特開平４−１
８２３８６号公報、特開平５−２３８８８２号公報等が
ある。特開平３−１２６８７５号公報には、リング状の
載置台にウェハを処理面を下にして載せ、下部から反応
ガスを供給する技術が示されている。しかし、ウェハの
周辺が面接触で支持されるため、上記した問題が残され
る。Techniques for holding a substrate or wafer in vapor phase growth or epitaxial growth include, for example,
JP-A-3-126875, JP-A-3-19919
6, JP-A-4-50195, JP-A-4-1-1.
No. 82386, JP-A-5-238882, and the like. Japanese Unexamined Patent Publication No. 3-126875 discloses a technique in which a wafer is placed on a ring-shaped mounting table with the processing surface facing down, and a reaction gas is supplied from below. However, since the periphery of the wafer is supported by surface contact, the above problem remains.
【００１２】特開平３−１９９１９６号公報には、サセ
プタに半球状に形成された座ぐり部の傾斜面にウェハを
当接させ、ピンホールの発生を防止する技術が示されて
いるが、下側から反応ガスを供給することができないた
め、図８の様な構成の半導体成長装置に用いることはで
きない。特開平４−５０１９５号公報には、基板ホルダ
をウェハ押さえと、このウェハ押さえに装着されるＬ字
形の複数のピンから構成し、このピンの先端部でウェハ
を支持してウェハを下向きに保持できるようにした技術
が示されている。しかし、ウェハの周縁部がサセプタに
よって面接触で支持されるため、上記した問題が残され
る。Japanese Unexamined Patent Publication (Kokai) No. 3-199196 discloses a technique in which a wafer is brought into contact with an inclined surface of a spot facing portion formed in a hemispherical shape on a susceptor to prevent generation of pinholes. Since the reaction gas cannot be supplied from the side, it cannot be used in the semiconductor growth apparatus having the configuration shown in FIG. In Japanese Patent Laid-Open No. 4-50195, a substrate holder is composed of a wafer holder and a plurality of L-shaped pins mounted on the wafer holder. The tip of the pin supports the wafer to hold the wafer downward. The technology that made it possible is shown. However, since the peripheral portion of the wafer is supported by the susceptor in surface contact, the above problem remains.
【００１３】特開平４−１８２３８６号公報には、基板
の周縁部に対応する位置に溝を形成し、基板の周縁部に
サセプタが接触しないようにし、周縁部からのクラック
の発生を防止する技術が示されている。しかし、図１０
の様な構造の基板ホルダによって基板を支持する構成に
は適用できない。特開平５−２３８８８２号公報には、
サセプタにウェハの厚み以上の深さのザグリを形成し、
このザグリ面にリング状の突起部を設け、この突起部に
よりウェハを支持し、スリップの発生を防止する技術が
示されている。しかし、図８の様に基板を下向きにし、
下側から反応ガスを供給する構成には適用できない。Japanese Unexamined Patent Publication No. 4-182386 discloses a technique in which a groove is formed at a position corresponding to the peripheral edge of a substrate so that the susceptor does not contact the peripheral edge of the substrate and cracks are prevented from being generated from the peripheral edge. It is shown. However, FIG.
It cannot be applied to the structure in which the substrate is supported by the substrate holder having the above structure. Japanese Unexamined Patent Publication No. 5-238882 discloses that
Form a counterbore with a depth greater than the thickness of the wafer on the susceptor,
A technique is disclosed in which a ring-shaped protrusion is provided on the countersink surface, and the wafer is supported by the protrusion to prevent the occurrence of slip. However, as shown in FIG.
It cannot be applied to the structure in which the reaction gas is supplied from the lower side.
【００１４】本発明の目的は、基板の周縁部にスリップ
ラインが生じないようにすることのできる半導体成長装
置における基板ホルダを提供することにある。An object of the present invention is to provide a substrate holder in a semiconductor growth apparatus capable of preventing a slip line from being generated on the peripheral edge of the substrate.
【００１５】[0015]
【課題を解決するための手段】上記の目的を達成するた
めに、この発明は、成長室内に設置され、結晶成長のた
めの基板が処理面を下にして載置される基板ホルダにお
いて、前記基板を点接触又は線接触によって載置する載
置部を備えるようにしている。この構成によれば、基板
と基板ホルダが、相互に面接触する部分はなくなり、基
板と基板ホルダの熱膨張率の相違に起因する影響を排除
することができる。したがって、基板の周縁部にスリッ
プラインを生じさせる機会を低減することができる。In order to achieve the above object, the present invention provides a substrate holder which is installed in a growth chamber and in which a substrate for crystal growth is placed with a processing surface facing down. A mounting portion for mounting the substrate by point contact or line contact is provided. According to this configuration, there is no portion where the substrate and the substrate holder are in surface contact with each other, and the influence due to the difference in the coefficient of thermal expansion between the substrate and the substrate holder can be eliminated. Therefore, it is possible to reduce the chance of producing a slip line on the peripheral portion of the substrate.
【００１６】この場合の載置部は、基板に対して傾斜面
を有する構成、基板に対して曲面を有する構成にするこ
とができる。これにより、載置部は基板に対して線接触
により接触し、基板の周縁部にスリップラインを生じさ
せることがない。また、載置部は、横又は縦置きの円柱
状、半円球状、蒲鉾形、円錐形又は角錐形で前記基板側
に突出する突起を備える構成にすることができ、これに
より、載置部は基板に対して点接触又は線接触により接
触し、基板の周縁部にスリップラインを生じさせること
がない。In this case, the mounting portion may have an inclined surface with respect to the substrate or a curved surface with respect to the substrate. As a result, the mounting portion comes into line contact with the substrate and does not cause a slip line at the peripheral edge of the substrate. Further, the mounting portion can be configured to have a protrusion protruding toward the substrate side in a columnar shape, a semi-spherical shape, a semi-cylindrical shape, a semi-cylindrical shape, a conical shape, or a pyramid shape that is horizontally or vertically placed. Contacts the substrate by point contact or line contact, and does not cause a slip line at the peripheral edge of the substrate.
【００１７】更に、載置部の点接触又は線接触する部分
は、前記基板の〔１１０〕±３度の範囲（方向）を避け
ることが良く、これによりスリップラインが最も発生し
易い領域を避けることができる。この結果、スリップラ
インの発生を更に低減することができる。Further, it is preferable to avoid the point contact or line contact of the mounting portion within the range (direction) of [110] ± 3 degrees of the substrate, thereby avoiding the region where the slip line is most likely to occur. be able to. As a result, the occurrence of slip lines can be further reduced.
【００１８】[0018]
【発明の実施の形態】以下、本発明の第１の実施の形態
を図面に基づいて説明する。図１は本発明による基板ホ
ルダの第１実施例を示す断面図である。図１に示すよう
に、本発明の基板ホルダ１０においては、砒化ガリウム
基板１０７の載置部１１に傾斜面１１ａを持たせ、載置
部１１と砒化ガリウム基板１０７との接触が点接触又は
線接触になるようにしたところに特徴がある。ここでは
平坦な傾斜部にしたが、図２に示す様に、傾斜面が曲面
１２ａを有してもよい（第２の実施の形態）。或いは、
図３に示す様に、図１とは逆向きの傾斜面１３ａを有す
る構造であってもよい（第３の実施の形態）。DETAILED DESCRIPTION OF THE INVENTION A first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a first embodiment of a substrate holder according to the present invention. As shown in FIG. 1, in the substrate holder 10 of the present invention, the mounting portion 11 of the gallium arsenide substrate 107 is provided with an inclined surface 11a, and the mounting portion 11 and the gallium arsenide substrate 107 are brought into contact with each other by point contact or line contact. The feature is that they are in contact with each other. Although the flat inclined portion is used here, the inclined surface may have a curved surface 12a as shown in FIG. 2 (second embodiment). Alternatively,
As shown in FIG. 3, a structure having an inclined surface 13a in the opposite direction to that of FIG. 1 may be used (third embodiment).
【００１９】更に、図４に示す様に、載置部１４の上面
は水平とし、この面に半円球状又は蒲鉾形、円柱状の突
起１５を載置部１４に一体化して設け、点接触又は線接
触の構造にしてもよい（第４の実施の形態）。なお、図
４の構成においては、突起１５を円錐形、三角形等に変
えることもできる。また、図５に示す様に、突起１５に
代えて球状又は円柱状の突状部材１６を別部品で配設す
る構成にしてもよい（第５の実施の形態）。Further, as shown in FIG. 4, the upper surface of the mounting portion 14 is horizontal, and a semi-spherical, semi-cylindrical, or columnar projection 15 is integrally provided on the mounting portion 14 for point contact. Alternatively, a line contact structure may be used (fourth embodiment). In addition, in the configuration of FIG. 4, the protrusion 15 may be changed to a conical shape, a triangular shape, or the like. Further, as shown in FIG. 5, instead of the projection 15, a spherical or cylindrical projecting member 16 may be provided as a separate component (fifth embodiment).
【００２０】以上のように、基板ホルダ１０の載置部と
の接触が線接触になるようにしたので、搬送温度まで降
温を急速に行っても、熱膨張率の影響が極めて小さくな
り、スリップラインを生じる恐れはない。したがって、
歩留り向上が可能になる。図６は図４の実施例の平面図
を示している。載置部１４上に点々の半円弧状に示した
ものが突起１５であり、この突起１５上に基板が載置さ
れる。突起１５は、１周を複数に分割し、その分割部１
７は〔１１０〕±３度の位置であり、この分割部１７に
突起を設けないことにより、スリップラインが生じ易い
〔１１０〕方向の基板には接触物が存在しないので、ス
リップラインの発生を確実に防止することができる。As described above, since the contact with the mounting portion of the substrate holder 10 is made to be a linear contact, the influence of the coefficient of thermal expansion becomes extremely small even if the temperature is rapidly lowered to the carrying temperature, and the slip occurs. There is no fear of creating lines. Therefore,
Yield can be improved. FIG. 6 shows a plan view of the embodiment of FIG. The projections 15 are shown on the mounting portion 14 in a dotted semi-circular shape, and the substrate is mounted on the projections 15. The projection 15 divides one circumference into a plurality of parts, and the divided part 1
7 is a position of [110] ± 3 degrees, and by not providing a protrusion on the dividing portion 17, there is no contact object on the substrate in the [110] direction where a slip line is likely to occur, so that a slip line is not generated. It can be surely prevented.
【００２１】図７は図１、図２又は図３の構成におい
て、載置部１１（或いは載置部１２又は１３）を１周さ
せずに、図６と同様に分割部１７を設けた構成にしてい
る。この場合も、分割部１７は〔１１０〕±３度の位置
に設けられる。FIG. 7 shows a configuration in which the mounting portion 11 (or the mounting portion 12 or 13) is not rotated once in the configuration of FIG. 1, FIG. 2 or FIG. I have to. Also in this case, the dividing portion 17 is provided at a position of [110] ± 3 degrees.
【００２２】[0022]
【実施例】本発明者らは、図１の構成の基板ホルダ１０
を用い、ＭＢＥ半導体成長装置によりＦＥＴ用エピタキ
シャル結晶成長を行った。基板温度は、表面荒れを防止
するため、搬入時には４００℃以下にし、ついで駆動装
置１０８ａで回転させながら１００℃／分により７５０
℃まで加熱し、ＲＨＥＥＤ（ Reflective High Energy
Electron Diffraction：反射高速電子線回折法）により
表面サーマルクリーニングを行い、６５０℃に温度を下
げてアンドープＧａＡｓバッファ層を５００ｎｍ成長さ
せた。続けてキャップ層として、ｉドープ（ドーピング
濃度２×１０17／ｃｍ３）のｎ型ＧａＡｓ層を２００ｎ
ｍ、アンドープＧａＡｓ層を５ｎｍ、順次エピタキシャ
ル成長させ、成長終了後、１００℃／分で４００℃まで
冷却し、成長室１０１→搬送室１１０→導入室１１３の
経路で取り出した。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
Was used to perform epitaxial crystal growth for FETs using an MBE semiconductor growth apparatus. In order to prevent the surface from becoming rough, the substrate temperature is set to 400 ° C. or lower at the time of loading and then 750 at 100 ° C./min while rotating by the driving device 108a.
RHEED (Reflective High Energy
Electron Diffraction (reflection high-energy electron diffraction) was used to perform surface thermal cleaning, and the temperature was lowered to 650 ° C. to grow an undoped GaAs buffer layer to a thickness of 500 nm. Subsequently, as a cap layer, 200 n of an i-doped (doping concentration 2 × 10 17 / cm 3) n-type GaAs layer is formed.
m and an undoped GaAs layer were sequentially epitaxially grown to a thickness of 5 nm, and after the growth was completed, they were cooled to 400 ° C. at 100 ° C./min and taken out through a path of growth chamber 101 → transport chamber 110 → introduction chamber 113.
【００２３】このようにして形成したＦＥＴ構造の半導
体結晶の表面状態は、１００℃／分と非常に高速に昇温
及び降温したにもかかわらず、スリップラインの発生は
殆ど生じなかった。また、電気的特性その他の諸特性に
も変化は見られなかった。なお、上記においてはＭＢＥ
法による成長について説明したが、本発明者らはＭＯＶ
ＰＥ法で行っても同様の確認を行っており、高速な昇降
温を行ってもスリップラインの発生を低減できることが
確かめられた。In the surface state of the semiconductor crystal of the FET structure thus formed, the slip line was hardly generated even though the temperature was raised and lowered at a very high rate of 100 ° C./min. In addition, no change was observed in the electrical characteristics and other characteristics. In the above, MBE
Although the growth by the method was described, the present inventors
The same confirmation was performed by the PE method, and it was confirmed that the occurrence of the slip line can be reduced even if the temperature is raised and lowered at high speed.
【００２４】[0024]
【発明の効果】以上より明らかなように、本発明によれ
ば、成長室内に基板を位置決めするための基板ホルダ
が、点接触又は線接触する載置部を備えるようにしたの
で、基板の周縁部にスリップラインを生じさせない様に
することができ、スループットの向上、すなわち製品歩
留りを向上させることができる。As is apparent from the above, according to the present invention, since the substrate holder for positioning the substrate in the growth chamber is provided with the placing portion that makes point contact or line contact, the peripheral edge of the substrate is obtained. It is possible to prevent a slip line from being generated in a part, so that throughput can be improved, that is, product yield can be improved.
【図１】本発明による基板ホルダの第１の実施の形態を
示す断面図である。FIG. 1 is a sectional view showing a first embodiment of a substrate holder according to the present invention.
【図２】本発明による基板ホルダの第２の実施の形態を
示す断面図である。FIG. 2 is a sectional view showing a second embodiment of a substrate holder according to the present invention.
【図３】本発明による基板ホルダの第３の実施の形態を
示す断面図である。FIG. 3 is a sectional view showing a third embodiment of a substrate holder according to the present invention.
【図４】本発明による基板ホルダの第４の実施の形態を
示す断面図である。FIG. 4 is a sectional view showing a fourth embodiment of a substrate holder according to the present invention.
【図５】本発明による基板ホルダの第５の実施の形態を
示す断面図である。FIG. 5 is a sectional view showing a fifth embodiment of the substrate holder according to the present invention.
【図６】図４の実施の形態を示す平面図である。FIG. 6 is a plan view showing the embodiment of FIG.
【図７】図１、図２又は図３の構成において基板ホルダ
の載置部を分割した構成を示す平面図である。FIG. 7 is a plan view showing a configuration in which the mounting portion of the substrate holder is divided in the configuration of FIG. 1, FIG. 2 or FIG.
【図８】ＭＢＥ半導体成長装置の一例を示す構成図であ
る。FIG. 8 is a configuration diagram showing an example of an MBE semiconductor growth apparatus.
【図９】図８に示す基板ホルダの周辺構成を示す断面図
である。9 is a cross-sectional view showing a peripheral configuration of the substrate holder shown in FIG.
【図１０】図８に示す基板ホルダの拡大断面図を示して
いる。10 shows an enlarged cross-sectional view of the substrate holder shown in FIG.
１０ 基板ホルダ １１，１２，１３，１４ 載置部 １５ 突起 １６ 突状部材 １７ 分割部 １００ 成長室 10 Substrate holder 11, 12, 13, 14 Mounting part 15 Projection 16 Projecting member 17 Dividing part 100 Growth chamber
Claims (5)
基板が処理面を下にして載置される基板ホルダにおい
て、 前記基板を点接触又は線接触によって載置する載置部を
備えることを特徴とする半導体成長装置における基板ホ
ルダ。1. A substrate holder, which is placed in a growth chamber and on which a substrate for crystal growth is placed with a processing surface facing down, comprises a placing part for placing the substrate by point contact or line contact. A substrate holder for a semiconductor growth apparatus.
る傾斜面を有することを特徴とする請求項１記載の半導
体成長装置における基板ホルダ。2. The substrate holder in a semiconductor growth apparatus according to claim 1, wherein the mounting portion has an inclined surface that horizontally supports the substrate.
る曲面を有することを特徴とする請求項１記載の半導体
成長装置における基板ホルダ。3. The substrate holder in a semiconductor growth apparatus according to claim 1, wherein the mounting portion has a curved surface that horizontally supports the substrate.
半円球状、蒲鉾形、円錐形又は角錐形で前記基板側に突
出する突起を備えることを特徴とする請求項１記載の半
導体成長装置における基板ホルダ。4. The mounting portion is a columnar shape that is placed horizontally or vertically,
2. The substrate holder in a semiconductor growth apparatus according to claim 1, wherein the substrate holder has a semi-spherical shape, a semi-cylindrical shape, a conical shape, or a pyramidal shape and has a protrusion protruding toward the substrate.
３度の範囲を避けた部分を支持する構成を有することを
特徴とする請求項１記載の半導体成長装置における基板
ホルダ。5. The mounting portion is [110] ± of the substrate.
The substrate holder in a semiconductor growth apparatus according to claim 1, wherein the substrate holder has a structure for supporting a portion avoiding a range of 3 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20552995A JPH0952792A (en) | 1995-08-11 | 1995-08-11 | Substrate holder of apparatus for growing semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20552995A JPH0952792A (en) | 1995-08-11 | 1995-08-11 | Substrate holder of apparatus for growing semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0952792A true JPH0952792A (en) | 1997-02-25 |
Family
ID=16508403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20552995A Pending JPH0952792A (en) | 1995-08-11 | 1995-08-11 | Substrate holder of apparatus for growing semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0952792A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003168717A (en) * | 2001-12-03 | 2003-06-13 | Yaskawa Electric Corp | Wafer transport fork |
| WO2007131547A1 (en) * | 2006-05-15 | 2007-11-22 | Aixtron Ag | Semiconductor control device for a cvd or rtp process |
| JP2009016567A (en) * | 2007-07-04 | 2009-01-22 | Nuflare Technology Inc | Vapor deposition apparatus, and vapor deposition method |
| WO2009060912A1 (en) * | 2007-11-08 | 2009-05-14 | Sumco Corporation | Epitaxial film growing method, wafer supporting structure and susceptor |
| US20140265091A1 (en) * | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Susceptors for enhanced process uniformity and reduced substrate slippage |
| JP2016122837A (en) * | 2014-12-12 | 2016-07-07 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | Carrier ring structure and chamber systems including the same |
| JP2019119896A (en) * | 2017-12-28 | 2019-07-22 | トヨタ自動車株式会社 | Plasma treatment apparatus |
-
1995
- 1995-08-11 JP JP20552995A patent/JPH0952792A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003168717A (en) * | 2001-12-03 | 2003-06-13 | Yaskawa Electric Corp | Wafer transport fork |
| WO2007131547A1 (en) * | 2006-05-15 | 2007-11-22 | Aixtron Ag | Semiconductor control device for a cvd or rtp process |
| JP2009016567A (en) * | 2007-07-04 | 2009-01-22 | Nuflare Technology Inc | Vapor deposition apparatus, and vapor deposition method |
| WO2009060912A1 (en) * | 2007-11-08 | 2009-05-14 | Sumco Corporation | Epitaxial film growing method, wafer supporting structure and susceptor |
| US8324063B2 (en) | 2007-11-08 | 2012-12-04 | Sumco Corporation | Epitaxial film growing method, wafer supporting structure and susceptor |
| CN105009272A (en) * | 2013-03-15 | 2015-10-28 | 应用材料公司 | Susceptors for enhanced process uniformity and reduced substrate slippage |
| US20140265091A1 (en) * | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Susceptors for enhanced process uniformity and reduced substrate slippage |
| JP2016518699A (en) * | 2013-03-15 | 2016-06-23 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Susceptor for enhanced process uniformity and reduced substrate slip |
| US9799548B2 (en) | 2013-03-15 | 2017-10-24 | Applied Materials, Inc. | Susceptors for enhanced process uniformity and reduced substrate slippage |
| TWI631660B (en) * | 2013-03-15 | 2018-08-01 | 應用材料股份有限公司 | Susceptors for enhanced process uniformity and reduced substrate slippage |
| CN112201594A (en) * | 2013-03-15 | 2021-01-08 | 应用材料公司 | Susceptor for enhanced process uniformity and reduced substrate slip |
| JP2016122837A (en) * | 2014-12-12 | 2016-07-07 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | Carrier ring structure and chamber systems including the same |
| KR20200022414A (en) * | 2014-12-12 | 2020-03-03 | 램 리써치 코포레이션 | Carrier ring structure and chamber systems including same |
| JP2019119896A (en) * | 2017-12-28 | 2019-07-22 | トヨタ自動車株式会社 | Plasma treatment apparatus |
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