JPS5838783U - Mass production thin film manufacturing equipment - Google Patents
Mass production thin film manufacturing equipmentInfo
- Publication number
- JPS5838783U JPS5838783U JP13374581U JP13374581U JPS5838783U JP S5838783 U JPS5838783 U JP S5838783U JP 13374581 U JP13374581 U JP 13374581U JP 13374581 U JP13374581 U JP 13374581U JP S5838783 U JPS5838783 U JP S5838783U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- chamber
- reaction gas
- film manufacturing
- mass production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は量産型薄膜製造装置の従来例の配置図、第2図
は本考案の一実施例の配置図である。
1・・・・・・反応室、2.3・・・・・・電極、4・
・・・・・基板、5・・・・・・排気口、6・・・・・
・導入口、7・・・・・・高周波電源、8・・・・・・
直流電源、9・・・・・・供給管、10・・・・・・分
岐管、12・・・・・・小室。FIG. 1 is a layout diagram of a conventional example of a mass-produced thin film manufacturing apparatus, and FIG. 2 is a layout diagram of an embodiment of the present invention. 1...Reaction chamber, 2.3...Electrode, 4.
... Board, 5 ... Exhaust port, 6 ...
・Inlet, 7...High frequency power supply, 8...
DC power supply, 9...supply pipe, 10...branch pipe, 12...small chamber.
Claims (1)
ー放電を発生させ、反応室内に供給された反応ガスを分
解して反応ガスの成分を電極に支持された基板上に薄膜
として生成するものにおいて、反応室を寸法および形状
が等しい多数の小室に区分して各小室内の対応する位置
に対向電極を収容するとともに、各小室を真空排気可能
とし、かつ共通の反応ガス源とほぼ等しい抵抗を有する
流路を介して接続したことを特徴とする量産型薄膜製造
装置。A voltage is applied between a number of electrodes housed in the reaction chamber to generate glow discharge, decompose the reaction gas supplied into the reaction chamber, and generate the components of the reaction gas as a thin film on the substrate supported by the electrodes. In this method, the reaction chamber is divided into a number of small chambers of equal size and shape, a counter electrode is housed in a corresponding position within each chamber, each chamber can be evacuated, and the source of the reaction gas is approximately the same as that of a common reaction gas source. A mass-produced thin film manufacturing device characterized in that the device is connected via a flow path having resistance.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13374581U JPS5838783U (en) | 1981-09-09 | 1981-09-09 | Mass production thin film manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13374581U JPS5838783U (en) | 1981-09-09 | 1981-09-09 | Mass production thin film manufacturing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5838783U true JPS5838783U (en) | 1983-03-14 |
JPS6123011Y2 JPS6123011Y2 (en) | 1986-07-10 |
Family
ID=29927192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13374581U Granted JPS5838783U (en) | 1981-09-09 | 1981-09-09 | Mass production thin film manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5838783U (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5628637A (en) * | 1979-08-16 | 1981-03-20 | Shunpei Yamazaki | Film making method |
-
1981
- 1981-09-09 JP JP13374581U patent/JPS5838783U/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5628637A (en) * | 1979-08-16 | 1981-03-20 | Shunpei Yamazaki | Film making method |
Also Published As
Publication number | Publication date |
---|---|
JPS6123011Y2 (en) | 1986-07-10 |
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