JPS59187135U - Semiconductor thin film forming equipment - Google Patents
Semiconductor thin film forming equipmentInfo
- Publication number
- JPS59187135U JPS59187135U JP8268383U JP8268383U JPS59187135U JP S59187135 U JPS59187135 U JP S59187135U JP 8268383 U JP8268383 U JP 8268383U JP 8268383 U JP8268383 U JP 8268383U JP S59187135 U JPS59187135 U JP S59187135U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- film forming
- forming equipment
- forming apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
図面はそれぞれ半導体薄膜形成装置の概略断面図を示し
、第1図は従来例、第2図はこの考案の1実施例である
。
9・・・反応室、12・・・高周波電極、13・・・ア
ース電極、15・・・基板。The drawings each show a schematic sectional view of a semiconductor thin film forming apparatus, with FIG. 1 showing a conventional example and FIG. 2 showing an embodiment of this invention. 9... Reaction chamber, 12... High frequency electrode, 13... Earth electrode, 15... Substrate.
Claims (1)
との間のグロー放電によりプラズマを発生させるととも
に、前記反応室内に導入された反応ガスを前記プラズマ
中で分解して基板上に半導′ 体薄膜を形成する
半導体薄膜形成装置において、前記基板を前記両電極に
垂直に配置した半導体薄膜形成装置。 ■ 高周波電極およびアース電極が複数個並設された実
用新案登録請求の範囲第1項に記載の半導体薄膜形成装
置。[Claims for Utility Model Registration] (1) Plasma is generated by glow discharge between a high frequency electrode and a ground electrode provided in a reaction chamber, and a reaction gas introduced into the reaction chamber is decomposed in the plasma. 1. A semiconductor thin film forming apparatus for forming a semiconductor thin film on a substrate using a semiconductor thin film forming apparatus, wherein the substrate is disposed perpendicularly to both the electrodes. (2) A semiconductor thin film forming apparatus according to claim 1, in which a plurality of high-frequency electrodes and a plurality of ground electrodes are arranged in parallel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8268383U JPS59187135U (en) | 1983-05-30 | 1983-05-30 | Semiconductor thin film forming equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8268383U JPS59187135U (en) | 1983-05-30 | 1983-05-30 | Semiconductor thin film forming equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59187135U true JPS59187135U (en) | 1984-12-12 |
Family
ID=30212637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8268383U Pending JPS59187135U (en) | 1983-05-30 | 1983-05-30 | Semiconductor thin film forming equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59187135U (en) |
-
1983
- 1983-05-30 JP JP8268383U patent/JPS59187135U/en active Pending
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