JPS54124683A - Processing method of silicon wafer - Google Patents

Processing method of silicon wafer

Info

Publication number
JPS54124683A
JPS54124683A JP3217678A JP3217678A JPS54124683A JP S54124683 A JPS54124683 A JP S54124683A JP 3217678 A JP3217678 A JP 3217678A JP 3217678 A JP3217678 A JP 3217678A JP S54124683 A JPS54124683 A JP S54124683A
Authority
JP
Japan
Prior art keywords
wafer
gas
constitution
minutes
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3217678A
Other languages
Japanese (ja)
Other versions
JPS5839377B2 (en
Inventor
Toshio Kasai
Shojiro Miyake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3217678A priority Critical patent/JPS5839377B2/en
Publication of JPS54124683A publication Critical patent/JPS54124683A/en
Publication of JPS5839377B2 publication Critical patent/JPS5839377B2/en
Expired legal-status Critical Current

Links

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To remove easily stacking faults on the surface by using CF4 gas, which includes O2 below 50% in a volume proportion, to etch a Si wafer under the discharge voltage below 2.5KV and changing the O2 content ratio to 25 to 100% in processing the Si wafer after polishing.
CONSTITUTION: Supply hole 1a and exhaust hole 1b for mixture gas of CF4 and O2 are provided in stainless vacuum room 1 which constitutes a high frequency sputter etching unit, and upper electrode 2 and lower electrode 3 which Si wafer 6 is put on are provided inside the room. Then, high frequency power source 4 which has one end grounded is connected to lower electrode 3 through impedance matching circuit 5. In this constitution, when wafer 6 is etched, CF4 gas including O2 below 50% in a volume proportion is led in at first, and the gas pressure is set to 2×10-2 Torr. Next, plasma 7 is generated while setting the voltage, which is applied to electrodes 2 and 3, below 2.5KV, and the content ratio of O2 is changed to 25 to 100% for approximately 1 to 10 minutes after maintaining the state above approximately 60 minutes.
COPYRIGHT: (C)1979,JPO&Japio
JP3217678A 1978-03-20 1978-03-20 Silicon wafer processing method Expired JPS5839377B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3217678A JPS5839377B2 (en) 1978-03-20 1978-03-20 Silicon wafer processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3217678A JPS5839377B2 (en) 1978-03-20 1978-03-20 Silicon wafer processing method

Publications (2)

Publication Number Publication Date
JPS54124683A true JPS54124683A (en) 1979-09-27
JPS5839377B2 JPS5839377B2 (en) 1983-08-30

Family

ID=12351619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3217678A Expired JPS5839377B2 (en) 1978-03-20 1978-03-20 Silicon wafer processing method

Country Status (1)

Country Link
JP (1) JPS5839377B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103424A (en) * 1980-01-22 1981-08-18 Toshiba Corp Plasma etching method
JPS56122129A (en) * 1980-02-28 1981-09-25 Nec Corp Manufacture of semiconductor device
JPS5768033A (en) * 1980-10-16 1982-04-26 Toshiba Corp Manufacture of semiconductor device
JPH02253807A (en) * 1989-03-27 1990-10-12 Toshiba Ceramics Co Ltd Filter
US5030580A (en) * 1989-08-28 1991-07-09 Sharp Kabushiki Kaisha Method for producing a silicon carbide semiconductor device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60138881U (en) * 1984-02-27 1985-09-13 富士重工業株式会社 Automotive front floor reinforcement device
JPS6189179A (en) * 1984-10-06 1986-05-07 Daihatsu Motor Co Ltd Car forward floor structure
JPH0352612Y2 (en) * 1985-03-19 1991-11-14
JPS6364883A (en) * 1986-09-04 1988-03-23 Mazda Motor Corp Structure for front frame of automobile
JPH0423111Y2 (en) * 1986-11-12 1992-05-28
JPH0562388U (en) * 1992-01-31 1993-08-20 マツダ株式会社 Car side body structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103424A (en) * 1980-01-22 1981-08-18 Toshiba Corp Plasma etching method
JPS56122129A (en) * 1980-02-28 1981-09-25 Nec Corp Manufacture of semiconductor device
JPH0123938B2 (en) * 1980-02-28 1989-05-09 Nippon Electric Co
JPS5768033A (en) * 1980-10-16 1982-04-26 Toshiba Corp Manufacture of semiconductor device
JPH0133933B2 (en) * 1980-10-16 1989-07-17 Tokyo Shibaura Electric Co
JPH02253807A (en) * 1989-03-27 1990-10-12 Toshiba Ceramics Co Ltd Filter
US5030580A (en) * 1989-08-28 1991-07-09 Sharp Kabushiki Kaisha Method for producing a silicon carbide semiconductor device

Also Published As

Publication number Publication date
JPS5839377B2 (en) 1983-08-30

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