JPS54124683A - Processing method of silicon wafer - Google Patents
Processing method of silicon waferInfo
- Publication number
- JPS54124683A JPS54124683A JP3217678A JP3217678A JPS54124683A JP S54124683 A JPS54124683 A JP S54124683A JP 3217678 A JP3217678 A JP 3217678A JP 3217678 A JP3217678 A JP 3217678A JP S54124683 A JPS54124683 A JP S54124683A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- gas
- constitution
- minutes
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To remove easily stacking faults on the surface by using CF4 gas, which includes O2 below 50% in a volume proportion, to etch a Si wafer under the discharge voltage below 2.5KV and changing the O2 content ratio to 25 to 100% in processing the Si wafer after polishing.
CONSTITUTION: Supply hole 1a and exhaust hole 1b for mixture gas of CF4 and O2 are provided in stainless vacuum room 1 which constitutes a high frequency sputter etching unit, and upper electrode 2 and lower electrode 3 which Si wafer 6 is put on are provided inside the room. Then, high frequency power source 4 which has one end grounded is connected to lower electrode 3 through impedance matching circuit 5. In this constitution, when wafer 6 is etched, CF4 gas including O2 below 50% in a volume proportion is led in at first, and the gas pressure is set to 2×10-2 Torr. Next, plasma 7 is generated while setting the voltage, which is applied to electrodes 2 and 3, below 2.5KV, and the content ratio of O2 is changed to 25 to 100% for approximately 1 to 10 minutes after maintaining the state above approximately 60 minutes.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3217678A JPS5839377B2 (en) | 1978-03-20 | 1978-03-20 | Silicon wafer processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3217678A JPS5839377B2 (en) | 1978-03-20 | 1978-03-20 | Silicon wafer processing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54124683A true JPS54124683A (en) | 1979-09-27 |
JPS5839377B2 JPS5839377B2 (en) | 1983-08-30 |
Family
ID=12351619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3217678A Expired JPS5839377B2 (en) | 1978-03-20 | 1978-03-20 | Silicon wafer processing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5839377B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56103424A (en) * | 1980-01-22 | 1981-08-18 | Toshiba Corp | Plasma etching method |
JPS56122129A (en) * | 1980-02-28 | 1981-09-25 | Nec Corp | Manufacture of semiconductor device |
JPS5768033A (en) * | 1980-10-16 | 1982-04-26 | Toshiba Corp | Manufacture of semiconductor device |
JPH02253807A (en) * | 1989-03-27 | 1990-10-12 | Toshiba Ceramics Co Ltd | Filter |
US5030580A (en) * | 1989-08-28 | 1991-07-09 | Sharp Kabushiki Kaisha | Method for producing a silicon carbide semiconductor device |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60138881U (en) * | 1984-02-27 | 1985-09-13 | 富士重工業株式会社 | Automotive front floor reinforcement device |
JPS6189179A (en) * | 1984-10-06 | 1986-05-07 | Daihatsu Motor Co Ltd | Car forward floor structure |
JPH0352612Y2 (en) * | 1985-03-19 | 1991-11-14 | ||
JPS6364883A (en) * | 1986-09-04 | 1988-03-23 | Mazda Motor Corp | Structure for front frame of automobile |
JPH0423111Y2 (en) * | 1986-11-12 | 1992-05-28 | ||
JPH0562388U (en) * | 1992-01-31 | 1993-08-20 | マツダ株式会社 | Car side body structure |
-
1978
- 1978-03-20 JP JP3217678A patent/JPS5839377B2/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56103424A (en) * | 1980-01-22 | 1981-08-18 | Toshiba Corp | Plasma etching method |
JPS56122129A (en) * | 1980-02-28 | 1981-09-25 | Nec Corp | Manufacture of semiconductor device |
JPH0123938B2 (en) * | 1980-02-28 | 1989-05-09 | Nippon Electric Co | |
JPS5768033A (en) * | 1980-10-16 | 1982-04-26 | Toshiba Corp | Manufacture of semiconductor device |
JPH0133933B2 (en) * | 1980-10-16 | 1989-07-17 | Tokyo Shibaura Electric Co | |
JPH02253807A (en) * | 1989-03-27 | 1990-10-12 | Toshiba Ceramics Co Ltd | Filter |
US5030580A (en) * | 1989-08-28 | 1991-07-09 | Sharp Kabushiki Kaisha | Method for producing a silicon carbide semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5839377B2 (en) | 1983-08-30 |
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