JP2753368B2 - Etching method - Google Patents
Etching methodInfo
- Publication number
- JP2753368B2 JP2753368B2 JP2064314A JP6431490A JP2753368B2 JP 2753368 B2 JP2753368 B2 JP 2753368B2 JP 2064314 A JP2064314 A JP 2064314A JP 6431490 A JP6431490 A JP 6431490A JP 2753368 B2 JP2753368 B2 JP 2753368B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- film
- etched
- alloy film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、フロン規制対象ガスを使用せずにTiW膜を
エッチングする方法に関する。Description: TECHNICAL FIELD The present invention relates to a method for etching a TiW film without using a CFC-restricted gas.
［従来の技術］ 従来、TiW膜のエッチングについては、Ｆを含むガス
でなければエッチングされず、又、Ｆを含むガスだけで
は、形状制御が得られないこともあり、SF6又はCF4とC2
Cl3F3やC2Cl2F4のようなフロン規制対象ガスとの組合せ
でエッチングしていた。[Prior Art] Conventionally, for etching the TiW film, etched unless a gas containing F, also the only gas containing F, sometimes shape control can not be obtained, and SF 6 or CF 4 C 2
Etching was performed in combination with a Freon regulated gas such as Cl 3 F 3 or C 2 Cl 2 F 4 .
なお、この種に関連するものとしては、例えば、特開
平１−161838号公報、特開平１−161839号公報等が挙げ
られる。In addition, as a thing related to this kind, JP-A-1-161838, JP-A-1-161839, etc. are exemplified.
上記従来技術はエッチングの加工性能は優れていた
が、フロン規制対象ガスを使用しているという問題があ
った。The above-mentioned prior art has excellent etching processing performance, but has a problem in that a gas subject to the regulation of chlorofluorocarbon is used.
本発明の目的は、TiW膜上にAl合金膜を積層した被エ
ッチング物において、Al合金膜の形状に影響を与えるこ
となく、且つ、フロン規制の対象ガスを用いずにTiW膜
をエッチングすることのできるエッチング方法を提供す
ることにある。An object of the present invention is to etch a TiW film without affecting the shape of the Al alloy film and without using a target gas of Freon regulation, in an etching target in which an Al alloy film is laminated on a TiW film. It is to provide an etching method which can be performed.
上記目的は、TiW膜上にAl合金膜を積層してなる被エ
ッチング物のAl合金膜をエッチング後、Al合金膜下層の
TiW膜をSF6とCl2との混合ガスから成る処理ガスのプラ
ズマによってエッチングする方法において、処理ガスを
SF6とCl2との混合ガスにCH2F2を組合せた処理ガスと
し、該処理ガスのプラズマによって被エッチング物のTi
W膜をエッチングすることにより、達成される。The above object is to etch the Al alloy film to be etched by laminating the Al alloy film on the TiW film, and then form the lower layer of the Al alloy film.
The TiW film in a method of etching by the plasma of the processing gas consisting of a gas mixture of SF 6 and Cl 2, and the process gas
And process gas in combination with CH 2 F 2 in a mixed gas of SF 6 and Cl 2, Ti of object to be etched by the plasma of the process gas
This is achieved by etching the W film.
Al合金膜の下層に積層されたTiW膜のエッチングに際
し、SF6とCl2とCH2F2から成る処理ガスをプラズマ化
し、該プラズマ化された混合処理ガス中の適量のF,Cl,
C,HがW,Tiのエッチングおよび被エッチング面の形状制
御に作用し、Al合金膜の形状に影響を与えることなく、
且つ、フロン規制の対象ガスを用いることなくTiW膜の
エッチングが可能となる。Upon etching of the TiW film laminated to the lower layer of the Al alloy film, and a plasma processing gas comprising SF 6 and Cl 2 and CH 2 F 2, an appropriate amount of F in the plasma has been mixed process gas, Cl,
C and H act on W and Ti etching and shape control of the etched surface, without affecting the shape of the Al alloy film.
In addition, the TiW film can be etched without using a gas subject to chlorofluorocarbon regulation.
以下、本発明の一実施例を第１図および第２図により
説明する。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
第４図にエッチング処理を行なう装置の一例を示す。
処理室１の上部には石英製の放電管２が設けてあり、真
空処理室を形成している。処理室１には、真空処理室内
にエッチング用処理ガスを供給するガス供給源につなが
る供給口10が設けてあり、また、真空処理室内部を所定
圧力に減圧、排気する真空排気装置につながる排気口９
が設けてある。処理室１内には被エッチング材であるウ
ェハ５を配置する試料台３が設けてある。試料台３には
高周波電源４が接続してあり、試料台３に高周波電力を
印加可能になっている。放電管２の外側には、放電管２
を囲んで導波管６が設けてあり、さらにその外側には放
電管２内に磁界を発生させるコイル８が設けてある。導
波管６の端部にはマイクロ波を発するマグネトロン７が
設けてある。FIG. 4 shows an example of an apparatus for performing an etching process.
A quartz discharge tube 2 is provided above the processing chamber 1 to form a vacuum processing chamber. The processing chamber 1 is provided with a supply port 10 connected to a gas supply source for supplying an etching processing gas into the vacuum processing chamber, and is evacuated to a vacuum exhaust device for reducing and evacuating the inside of the vacuum processing chamber to a predetermined pressure. Mouth 9
Is provided. In the processing chamber 1, there is provided a sample stage 3 on which a wafer 5 which is a material to be etched is arranged. A high frequency power supply 4 is connected to the sample stage 3 so that high frequency power can be applied to the sample stage 3. Outside the discharge tube 2 is a discharge tube 2
, A coil 8 for generating a magnetic field in the discharge tube 2 is provided outside the waveguide 6. At the end of the waveguide 6, a magnetron 7 for emitting microwaves is provided.
このような装置では、ガス供給口10から真空処理室内
にエッチング用処理ガスを供給するとともに、真空処理
室内の所定の圧力に減圧排気し、導波管６によってマグ
ネトロン７からのマイクロ波を放電管２に導入するとと
もに、コイル８によって磁界を形成し、マイクロ波の電
界とコイル８による磁界との作用によって、放電管２内
の処理ガスをプラズマ化する。さらに、高周波電源４に
よって試料台３に高周波電力を印加し、バイアス電圧を
生じさせ、プラズマ中のイオンをウェハ５側は引込み、
異方性エッチングを行なわせるようにしている。In such an apparatus, an etching process gas is supplied from a gas supply port 10 into a vacuum processing chamber, the pressure is reduced to a predetermined pressure in the vacuum processing chamber, and the microwave from a magnetron 7 is discharged by a waveguide 6 into a discharge tube. 2, a magnetic field is formed by the coil 8, and the processing gas in the discharge tube 2 is turned into plasma by the action of the microwave electric field and the magnetic field of the coil 8. Further, high frequency power is applied to the sample table 3 by the high frequency power supply 4 to generate a bias voltage, and ions in the plasma are drawn into the wafer 5 side.
Anisotropic etching is performed.
以下、本装置を用いてのエッチング例を第１図ないし
第３図により説明する。Hereinafter, an example of etching using the present apparatus will be described with reference to FIGS.
第１図はエッチング前のウェはを示す。なお、ここ
で、11はレジスト、12はAl合金膜、13はTiW膜、14は下
地絶縁膜（例えば、BPSG）、15はSi基板である。FIG. 1 shows the wafer before etching. Here, 11 is a resist, 12 is an Al alloy film, 13 is a TiW film, 14 is a base insulating film (for example, BPSG), and 15 is a Si substrate.
第２図はAl合金膜12をジャストエッチングまで加工し
た図を示す。Al合金膜は従来公知の方法でエッチングさ
れる。FIG. 2 shows a diagram in which the Al alloy film 12 has been processed to just etching. The Al alloy film is etched by a conventionally known method.
第３図はTiW膜３をジャストエッチングまで加工した
図を示す。TiW膜３のエッチングは、例えば、使用ガス
をSF6:Cl2:CH2F2の比率で５〜10:30:30とし、処理圧力
を1.0〜2.5Paとし、マグネトロン７からのマイクロ波パ
ワーを300〜400mAとし、高周波電源４によって与えるRF
バイアスを0.3〜0.5W/cm2とすることにより行なわれ
る。この場合、フロン規制の対象とならないガスとし
て、CH2F2を用いたが、この他にCHF3、CH3F、C4F8等の
デポ性のガスを用いることも有効である。また、Cl2に
替えてBCl3を用いることも有効である。FIG. 3 shows a diagram in which the TiW film 3 has been processed up to just etching. The etching of the TiW film 3 is performed, for example, using a gas of SF 6 : Cl 2 : CH 2 F 2 in a ratio of 5 to 10:30:30, a processing pressure of 1.0 to 2.5 Pa, and a microwave power from the magnetron 7. RF from 300 to 400 mA
This is performed by setting the bias to 0.3 to 0.5 W / cm 2 . In this case, CH 2 F 2 was used as a gas that is not subject to the regulation of CFCs, but it is also effective to use a depot gas such as CHF 3 , CH 3 F, and C 4 F 8 . It is also effective to use BCl 3 instead of Cl 2 .
以上、本実施例によれば、SF6とCl2またはBCl3とCH2F
2、CHF3、CH3F、C4F8等のいずれかとの３元組ガスを用
いることによって、フロン規制の対象ガスを用いずにTi
W膜をエッチング処理することができる。また、TiW膜の
エッチング中に上層のAl合金膜の形状に影響を与えるこ
ともなかった。As described above, according to the present embodiment, SF 6 and Cl 2 or BCl 3 and CH 2 F
2, CHF 3, CH 3 F , by using a 3-way set gas either as such C 4 F 8, Ti without the target gas freon regulations
The W film can be etched. Further, the shape of the upper Al alloy film was not affected during the etching of the TiW film.
本発明によれば、Al合金膜とTiW膜とを積層した被エ
ッチング物において、Al合金膜の形状に影響を与えるこ
となく、且つ、フロン規制の対象ガスを用いずにTiW膜
をエッチングすることができるという効果がある。According to the present invention, in an object to be etched in which an Al alloy film and a TiW film are laminated, the TiW film is etched without affecting the shape of the Al alloy film, and without using a target gas of the Freon regulation. There is an effect that can be.
第１図ないし第３図は本発明の一実施例のウェハの構造
を示す縦断面図で、第１図はエッチング前、第２図はAl
合金膜エッチング後、第３図はTiW膜エッチング後を示
す図、第４図は本発明のエッチング方法を実施する装置
の一例を示す概略構成図である。 11……レジスト、12……Al合金膜、 13……TiW膜、14……下地絶縁膜、 15……Si基板1 to 3 are longitudinal sectional views showing the structure of a wafer according to one embodiment of the present invention. FIG. 1 shows a state before etching, and FIG.
FIG. 3 is a view showing a state after the TiW film is etched after the alloy film is etched, and FIG. 4 is a schematic configuration diagram showing an example of an apparatus for performing the etching method of the present invention. 11 ... resist, 12 ... Al alloy film, 13 ... TiW film, 14 ... underlying insulating film, 15 ... Si substrate
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平１−312089（ＪＰ，Ａ) 特開 平１−279782（ＪＰ，Ａ) 特開 平１−276647（ＪＰ，Ａ) 特開 昭60−115229（ＪＰ，Ａ) 特開 昭61−214432（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) C23F 4/00 H01L 21/3065──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-1-312089 (JP, A) JP-A-1-279782 (JP, A) JP-A-1-276647 (JP, A) JP-A-60-1985 115229 (JP, A) JP-A-61-214432 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) C23F 4/00 H01L 21/3065
Claims (1)
チング物の前記Al合金膜をエッチング後、前記Al合金膜
下層のTiW膜をSF6とCl2との混合ガスから成る処理ガス
のプラズマによってエッチングする方法において、前記
処理ガスをSF6とCl2との混合ガスにCH2F2を組合せた処
理ガスとし、該処理ガスのプラズマによって前記被エッ
チング物のTiW膜をエッチングすることを特徴とするエ
ッチング方法。After the Al alloy film, which is an object to be etched, in which an Al alloy film is laminated on a TiW film is etched, the TiW film below the Al alloy film is treated with a mixed gas of SF 6 and Cl 2. In the method of etching by gas plasma, the processing gas is a processing gas obtained by combining CH 2 F 2 with a mixed gas of SF 6 and Cl 2, and the TiW film of the object to be etched is etched by the processing gas plasma. An etching method characterized by the above-mentioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2064314A JP2753368B2 (en) | 1990-03-16 | 1990-03-16 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2064314A JP2753368B2 (en) | 1990-03-16 | 1990-03-16 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03267387A JPH03267387A (en) | 1991-11-28 |
| JP2753368B2 true JP2753368B2 (en) | 1998-05-20 |
Family
ID=13254653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2064314A Expired - Lifetime JP2753368B2 (en) | 1990-03-16 | 1990-03-16 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2753368B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4141021B2 (en) * | 1998-09-18 | 2008-08-27 | 東京エレクトロン株式会社 | Plasma deposition method |
| TW527441B (en) * | 2000-06-26 | 2003-04-11 | Matsushita Electric Ind Co Ltd | Dry etching method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0640543B2 (en) * | 1983-11-28 | 1994-05-25 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
| JPS61214432A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Formation of fine pattern |
| JPH0828366B2 (en) * | 1988-04-27 | 1996-03-21 | カシオ計算機株式会社 | Method for forming electrode of semiconductor device |
| JP2574868B2 (en) * | 1988-04-30 | 1997-01-22 | シャープ株式会社 | Reactive ion etching method for laminated metal |
| JPH01312089A (en) * | 1988-06-13 | 1989-12-15 | Nippon Telegr & Teleph Corp <Ntt> | Dry etching method |
-
1990
- 1990-03-16 JP JP2064314A patent/JP2753368B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03267387A (en) | 1991-11-28 |
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