JPH03267387A - Etching method for tiw film - Google Patents
Etching method for tiw filmInfo
- Publication number
- JPH03267387A JPH03267387A JP6431490A JP6431490A JPH03267387A JP H03267387 A JPH03267387 A JP H03267387A JP 6431490 A JP6431490 A JP 6431490A JP 6431490 A JP6431490 A JP 6431490A JP H03267387 A JPH03267387 A JP H03267387A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- tiw film
- gaseous
- treatment chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims description 8
- 239000007789 gas Substances 0.000 claims description 26
- 101100447665 Mus musculus Gas2 gene Proteins 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 abstract description 10
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 abstract description 2
- 239000008246 gaseous mixture Substances 0.000 abstract 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- VUWZPRWSIVNGKG-UHFFFAOYSA-N fluoromethane Chemical compound F[CH2] VUWZPRWSIVNGKG-UHFFFAOYSA-N 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- YPSXFMHXRZAGTG-UHFFFAOYSA-N 4-methoxy-2-[2-(5-methoxy-2-nitrosophenyl)ethyl]-1-nitrosobenzene Chemical compound COC1=CC=C(N=O)C(CCC=2C(=CC=C(OC)C=2)N=O)=C1 YPSXFMHXRZAGTG-UHFFFAOYSA-N 0.000 description 1
- 102100021569 Apoptosis regulator Bcl-2 Human genes 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 101000971171 Homo sapiens Apoptosis regulator Bcl-2 Proteins 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 101150020073 cut-2 gene Proteins 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、フロン規制対象ガスを使用せずにＴｉＷ膜を
エツチングする方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of etching a TiW film without using a fluorocarbon regulated gas.
［従来の技術］
従来、ＴｉＷ膜のエツチングについては、Ｆを含むガス
でなければエツチングされず、又、Ｆを含むガスだけで
は、形状制御が得られないこともあり、ＳＦ、又はＣＦ
４とＣ２Ｃβｓ Ｆ ｓやＣ２Ｃｌ２２Ｆ、のようなフ
ロン規制対象ガスとの組合せでエツチングしていた。[Prior Art] Conventionally, when etching a TiW film, it cannot be etched unless the gas contains F, and shape control may not be obtained only with a gas containing F.
Etching was performed using a combination of 4 and a fluorocarbon regulated gas such as C2CβsFs or C2Cl22F.
なお、この種に関連するものとしては、例えば、特開平
１−１６１８３８号公報、特開平１−１６１８３９号公
報等が挙げられる。Incidentally, examples related to this type include, for example, JP-A No. 1-161838 and JP-A No. 1-161839.
［発明が解決しようとする課題］
上記従来技術はエツチングの加工性能は優れていたが、
フロン規制対象ガスを使用しているという問題があった
。[Problem to be solved by the invention] Although the above-mentioned conventional technology had excellent etching performance,
There was a problem with the use of gases subject to fluorocarbon regulations.
本発明の目的は、フロン規制対象ガスを使わずにエツチ
ング処理できるＴｉＷ膜のエツチング方法を提供するこ
とにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for etching a TiW film that can be etched without using a gas subject to fluorocarbon regulations.
［課題を解決するための手段］
上記目的を達成するために、フロン規制対象ガスに含ま
れないガスとして、Ｓ Ｆ ａと、Ｃｌ３またはＢＣ氾
、と、ＣＨＦ ３、ＣＨ、Ｆ ２、ＣＨ３Ｆ、またはＣ
２Ｆ２のいずれかとの組合せとしたものである。[Means for solving the problem] In order to achieve the above object, S Fa, Cl3 or BC flood, CHF3, CH, F2, CH3F, or C
2F2.
［作 用Ｉ
ＴｉＷ膜のエツチングに際し、Ｆを含むガス（ＳＦ、）
はＷのエツチングに、又Ｃ９，を含むガス（Ｃｆｆ、ま
たはＢＣρ、）はＴｉのエツチングに作用し、ＣＨＦ６
、ＣＨ２Ｆ６、ＣＩ（、Ｆ、Ｃ２Ｆ２等のガスは形状制
御に作用する。当該ガスを組合せて使用することにより
、ＴｉＷはフロン規制対象ガスを使用せずに垂直にエツ
チングされる。[Function I: When etching a TiW film, a gas containing F (SF, )
acts on the etching of W, a gas containing C9 (Cff, or BCρ,) acts on the etching of Ti, and CHF6 acts on the etching of Ti.
Gases such as , CH2F6, CI (, F, and C2F2) act on shape control. By using a combination of these gases, TiW can be etched vertically without using fluorocarbon-regulated gases.
［実 施 例〕
以下、本発明の一実施例を第１図および第２図により説
明する。[Example] An example of the present invention will be described below with reference to FIGS. 1 and 2.
第４図にエツチング処理を行なう装置の一例を示す。処
理室１の上部には石英製の放電管２が設けてあり、真空
処理室を形成している。処理室１には、真空処理室内に
エツチング用処理ガスを供給するガス供給源につながる
供給口１０が設けてあり、また、真空処理室内部を所定
圧力に減圧、排気する真空排気装置につながる排気口９
が設けである。処理室１内には被エツチング材であるウ
ェハ５を配置する試料台３が設けである。試料台３には
高周波電源４が接続してあり、試料台３に高周波電力を
印加可能になっている。放電管２の外側には、放電管２
を囲んで導波管６が設けてあり、さらにその外側には放
電管２内に磁界を発生させるコイル８が設けである。導
波管６の端部にはマイクロ波を発するマグネトロン７が
設けである。FIG. 4 shows an example of an apparatus for performing etching processing. A discharge tube 2 made of quartz is provided in the upper part of the processing chamber 1, forming a vacuum processing chamber. The processing chamber 1 is provided with a supply port 10 connected to a gas supply source that supplies etching processing gas into the vacuum processing chamber, and an exhaust port 10 connected to a vacuum exhaust device that reduces and exhausts the inside of the vacuum processing chamber to a predetermined pressure. Mouth 9
is the provision. A sample stage 3 is provided within the processing chamber 1 on which a wafer 5, which is a material to be etched, is placed. A high frequency power source 4 is connected to the sample stage 3, so that high frequency power can be applied to the sample stage 3. There is a discharge tube 2 on the outside of the discharge tube 2.
A waveguide 6 is provided surrounding the discharge tube 2, and a coil 8 for generating a magnetic field within the discharge tube 2 is provided outside the waveguide 6. A magnetron 7 that emits microwaves is provided at the end of the waveguide 6.
このような装置では、ガス供給口１０がら真空処理室内
にエツチング用処理ガスを供給するとともに、真空処理
室内の所定の圧力に減圧排気し。In such an apparatus, an etching processing gas is supplied into the vacuum processing chamber through the gas supply port 10, and the pressure inside the vacuum processing chamber is reduced to a predetermined pressure.
導波管６によってマグネトロン７からのマイクロ波を放
電管２に導入するとともに、コイル８によって磁界を形
成し、マイクロ波の電界とコイル８による磁界との作用
によって、放電管２内の処理ガスをプラズマ化する。さ
らに、高周波電源４によって試料台３に高周波電力を印
加し、バイアス電圧を生じさせ、プラズマ中のイオンを
ウェハ５側は引込み、異方性エツチングを行なわせるよ
うにしている。The waveguide 6 introduces the microwave from the magnetron 7 into the discharge tube 2, and the coil 8 forms a magnetic field, and the processing gas in the discharge tube 2 is heated by the interaction of the electric field of the microwave and the magnetic field of the coil 8. Turn into plasma. Further, high frequency power is applied to the sample stage 3 by a high frequency power source 4 to generate a bias voltage, and ions in the plasma are drawn to the wafer 5 side to perform anisotropic etching.
以下、本装置を用いてのエツチング例を第１図ないし第
３図により説明する。Hereinafter, an example of etching using this apparatus will be explained with reference to FIGS. 1 to 3.
第１図はエツチング前のウェハを示す。なお、ここで、
１１はレジ又ト、１２はＡ１２合金膜、１３はＴｉＷ膜
、１４は下地絶縁膜（例えば、ＢＰＳＧ）、１５はＳｉ
基板である。FIG. 1 shows the wafer before etching. Furthermore, here,
11 is a resist, 12 is an A12 alloy film, 13 is a TiW film, 14 is a base insulating film (for example, BPSG), and 15 is a Si
It is a board.
第２図はＡＡ合金膜１２をジャストエツチングまで加工
した図を示す。Ａ２合金膜は従来公知の方法でエツチン
グされる。FIG. 2 shows the AA alloy film 12 processed to just etching. The A2 alloy film is etched by a conventionally known method.
第３図はＴｉＷ膜３をジャストエツチングまで加工した
図を示す、ＴｉＷ膜３のエツチングは、例えば、使用ガ
スをＳＦ、：Ｃｊ２．：ＣＨ２Ｆ２の比率で５〜１０：
３０：３０とし、処理圧力を１０〜２．５Ｐａとし、マ
グネトロン７からのマイクロ波パワーを３００〜４００
ｍＡとし、高周波電源４によって与えるＲＦバイアスを
０．３〜０、５Ｗ／ｃｕｔ２とすることにより行なわれ
る。この場合、フロン規制の対象とならないガスとして
、ＣＨ２Ｆ、を用いたが、この他にＣＨＦ６、ＣＨ２Ｆ
２Ｃ，Ｆｓ等のデボ性のガスを用いることも有効である
。また、Ｃ１２２に替えてＢＣｌ２．を用いることも有
効である。FIG. 3 shows a diagram in which the TiW film 3 has been processed to just etching. The etching of the TiW film 3 is performed using, for example, SF, :Cj2. :CH2F2 ratio 5-10:
30:30, the processing pressure was 10-2.5 Pa, and the microwave power from magnetron 7 was 300-400 Pa.
mA, and the RF bias applied by the high frequency power source 4 is set to 0.3 to 0.5 W/cut2. In this case, CH2F was used as a gas that is not subject to fluorocarbon regulations, but in addition to this, CHF6, CH2F
It is also effective to use a devoting gas such as 2C or Fs. Also, instead of C122, BCl2. It is also effective to use
以上、本実施例によれば、ＳＦ、とＣ４２２またはＢＣ
ｆｆ、とＣＨ２Ｆ ２、ＣＨＦ ６、ＣＨ２Ｆ２Ｃ４Ｆ
、等のいずれかとの３元組ガスを用いることによって、
フロン規制の対象ガスを用いずにＴｉＷ膜をエツチング
処理することができる。また、ＴｉＷ膜のエツチング中
に上層のＡ１２合金膜の形状に影響を与えることもなか
った。As described above, according to this embodiment, SF and C422 or BC
ff, and CH2F 2, CHF 6, CH2F2C4F
, etc., by using a ternary gas combination with one of the following:
A TiW film can be etched without using a gas subject to fluorocarbon regulations. Furthermore, the shape of the upper A12 alloy film was not affected during etching of the TiW film.
［発明の効果］
本発明によれば、フロン規制の対象ガスを使用せずにＴ
ｉＷ膜のエツチング処理を行なうことができるという効
果がある。[Effects of the Invention] According to the present invention, T
This has the effect that etching of the iW film can be performed.
第１図ないし第３図は本発明の一実施例のウェハの構造
を示す縦断面図で、第１図はエツチング前、第２図はＡ
２合金膜エツチング後、第３図はＴｉＷ膜エツチング後
を示す図、第４図は本発明のエツチング方法を実施する
装置の一例を示す概略構成図である。
１１−−−−−−レジスト、１２−−−−−− Ａ２合
金膜、１３−−−−−− Ｔ ｉ Ｗ膜、１４−−−−
−一下地絶縁膜、第３目1 to 3 are longitudinal sectional views showing the structure of a wafer according to an embodiment of the present invention, in which FIG. 1 is before etching and FIG.
3 is a diagram showing the TiW film after etching, and FIG. 4 is a schematic diagram showing an example of an apparatus for carrying out the etching method of the present invention. 11------Resist, 12------ A2 alloy film, 13------ TiW film, 14------
-One base insulating film, third layer
Claims (2)
＿２またはＢＣｌ＿３、第３のガスとしてＣＨ＿２Ｆ＿
２、ＣＨＦ＿３、ＣＨ＿３Ｆ、Ｃ＿４Ｆ＿５のいずれか
またはこれらの混合ガスを用い、該第１ないし第３のガ
スを組合せ３元ガスとし、該ガスプラズマによってエッ
チング処理することを特徴とするＴｉＷ膜のエッチング
方法。1. SF_6 as the first gas, Cl as the second gas
_2 or BCl_3, CH_2F_ as the third gas
2. A TiW film etching method characterized by using any one of CHF_3, CH_3F, C_4F_5 or a mixture thereof, combining the first to third gases as a ternary gas, and etching with the gas plasma. .
、処理ガスとしてＳＦ＿６とＣｌ＿２とＣＨ＿２Ｆ＿２
とを用い、該処理ガスの比率を５〜１０：３０：３０と
したＴｉＷ膜のエッチング方法。2. In the TiW film etching method according to claim 1, SF_6, Cl_2 and CH_2F_2 are used as processing gases.
A method for etching a TiW film using the above processing gas at a ratio of 5 to 10:30:30.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2064314A JP2753368B2 (en) | 1990-03-16 | 1990-03-16 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2064314A JP2753368B2 (en) | 1990-03-16 | 1990-03-16 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03267387A true JPH03267387A (en) | 1991-11-28 |
| JP2753368B2 JP2753368B2 (en) | 1998-05-20 |
Family
ID=13254653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2064314A Expired - Lifetime JP2753368B2 (en) | 1990-03-16 | 1990-03-16 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2753368B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002080981A (en) * | 2000-06-26 | 2002-03-22 | Matsushita Electric Ind Co Ltd | Dry etching method |
| KR100401039B1 (en) * | 1998-09-18 | 2003-10-10 | 동경 엘렉트론 주식회사 | Plasma film forming method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115229A (en) * | 1983-11-28 | 1985-06-21 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS61214432A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Formation of fine pattern |
| JPH01276647A (en) * | 1988-04-27 | 1989-11-07 | Casio Comput Co Ltd | Formation of electrode for semiconductor device and etching device therefor |
| JPH01279782A (en) * | 1988-04-30 | 1989-11-10 | Sharp Corp | Reactive ion etching method for laminated metal |
| JPH01312089A (en) * | 1988-06-13 | 1989-12-15 | Nippon Telegr & Teleph Corp <Ntt> | Dry etching method |
-
1990
- 1990-03-16 JP JP2064314A patent/JP2753368B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115229A (en) * | 1983-11-28 | 1985-06-21 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS61214432A (en) * | 1985-03-20 | 1986-09-24 | Hitachi Ltd | Formation of fine pattern |
| JPH01276647A (en) * | 1988-04-27 | 1989-11-07 | Casio Comput Co Ltd | Formation of electrode for semiconductor device and etching device therefor |
| JPH01279782A (en) * | 1988-04-30 | 1989-11-10 | Sharp Corp | Reactive ion etching method for laminated metal |
| JPH01312089A (en) * | 1988-06-13 | 1989-12-15 | Nippon Telegr & Teleph Corp <Ntt> | Dry etching method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100401039B1 (en) * | 1998-09-18 | 2003-10-10 | 동경 엘렉트론 주식회사 | Plasma film forming method |
| JP2002080981A (en) * | 2000-06-26 | 2002-03-22 | Matsushita Electric Ind Co Ltd | Dry etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2753368B2 (en) | 1998-05-20 |
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