JPS57143827A - Parallel, flat electrode - Google Patents

Parallel, flat electrode

Info

Publication number
JPS57143827A
JPS57143827A JP2960381A JP2960381A JPS57143827A JP S57143827 A JPS57143827 A JP S57143827A JP 2960381 A JP2960381 A JP 2960381A JP 2960381 A JP2960381 A JP 2960381A JP S57143827 A JPS57143827 A JP S57143827A
Authority
JP
Japan
Prior art keywords
parallel
rough
electrode
wafer
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2960381A
Other languages
Japanese (ja)
Inventor
Isamu Hijikata
Akira Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2960381A priority Critical patent/JPS57143827A/en
Publication of JPS57143827A publication Critical patent/JPS57143827A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means

Abstract

PURPOSE:To acquire a parallel, flat electrode for dry etching to discharge stably under both low vacuum and low output voltage, by forming a rough discharging surface on at least one electrode of confronting pair electrodes each other. CONSTITUTION:A coaxial rough portion 13 is provided on a discharging surface 12 of an upper plate 10 of parallel, flat electrodes 8. The rough portion 13 has projections 13a and recesses 13b at equal intervals each other. A wafer 5 patterned by photoresist is mounted on a lower plate 11. High-frequency voltage is applied between the electrode plates 10 and 11 under gas-tight, decreased pressure. Plasma is created. The open portion of wafer 5 is etched. As the rough portion 13 is formed on the upper plate 10, the discharging voltage is sufficiently stable even if it is low. The even discharge is done. The stable plasma is obtained. The etching is done rapidly and evenly.
JP2960381A 1981-03-02 1981-03-02 Parallel, flat electrode Pending JPS57143827A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2960381A JPS57143827A (en) 1981-03-02 1981-03-02 Parallel, flat electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2960381A JPS57143827A (en) 1981-03-02 1981-03-02 Parallel, flat electrode

Publications (1)

Publication Number Publication Date
JPS57143827A true JPS57143827A (en) 1982-09-06

Family

ID=12280636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2960381A Pending JPS57143827A (en) 1981-03-02 1981-03-02 Parallel, flat electrode

Country Status (1)

Country Link
JP (1) JPS57143827A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5976427A (en) * 1982-10-14 1984-05-01 Fujitsu Ltd Plasma processing apparatus
JPS6226821A (en) * 1985-07-29 1987-02-04 インターナショナル・ビジネス・マシーンズ・コーポレーション Rf sputter/etching apparatus
JPS6273719A (en) * 1985-09-27 1987-04-04 Hitachi Ltd Dry etching apparatus
JPH01227426A (en) * 1988-03-08 1989-09-11 Mitsui Toatsu Chem Inc Film forming apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135934A (en) * 1980-03-27 1981-10-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135934A (en) * 1980-03-27 1981-10-23 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5976427A (en) * 1982-10-14 1984-05-01 Fujitsu Ltd Plasma processing apparatus
JPH0416937B2 (en) * 1982-10-14 1992-03-25 Fujitsu Ltd
JPS6226821A (en) * 1985-07-29 1987-02-04 インターナショナル・ビジネス・マシーンズ・コーポレーション Rf sputter/etching apparatus
JPH0528894B2 (en) * 1985-07-29 1993-04-27 Intaanashonaru Bijinesu Mashiinzu Corp
JPS6273719A (en) * 1985-09-27 1987-04-04 Hitachi Ltd Dry etching apparatus
JPH01227426A (en) * 1988-03-08 1989-09-11 Mitsui Toatsu Chem Inc Film forming apparatus
JP2602881B2 (en) * 1988-03-08 1997-04-23 三井東圧化学株式会社 Film forming equipment

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