JPS57143827A - Parallel, flat electrode - Google Patents
Parallel, flat electrodeInfo
- Publication number
- JPS57143827A JPS57143827A JP2960381A JP2960381A JPS57143827A JP S57143827 A JPS57143827 A JP S57143827A JP 2960381 A JP2960381 A JP 2960381A JP 2960381 A JP2960381 A JP 2960381A JP S57143827 A JPS57143827 A JP S57143827A
- Authority
- JP
- Japan
- Prior art keywords
- parallel
- rough
- electrode
- wafer
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Abstract
PURPOSE:To acquire a parallel, flat electrode for dry etching to discharge stably under both low vacuum and low output voltage, by forming a rough discharging surface on at least one electrode of confronting pair electrodes each other. CONSTITUTION:A coaxial rough portion 13 is provided on a discharging surface 12 of an upper plate 10 of parallel, flat electrodes 8. The rough portion 13 has projections 13a and recesses 13b at equal intervals each other. A wafer 5 patterned by photoresist is mounted on a lower plate 11. High-frequency voltage is applied between the electrode plates 10 and 11 under gas-tight, decreased pressure. Plasma is created. The open portion of wafer 5 is etched. As the rough portion 13 is formed on the upper plate 10, the discharging voltage is sufficiently stable even if it is low. The even discharge is done. The stable plasma is obtained. The etching is done rapidly and evenly.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2960381A JPS57143827A (en) | 1981-03-02 | 1981-03-02 | Parallel, flat electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2960381A JPS57143827A (en) | 1981-03-02 | 1981-03-02 | Parallel, flat electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57143827A true JPS57143827A (en) | 1982-09-06 |
Family
ID=12280636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2960381A Pending JPS57143827A (en) | 1981-03-02 | 1981-03-02 | Parallel, flat electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57143827A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5976427A (en) * | 1982-10-14 | 1984-05-01 | Fujitsu Ltd | Plasma processing apparatus |
JPS6226821A (en) * | 1985-07-29 | 1987-02-04 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Rf sputter/etching apparatus |
JPS6273719A (en) * | 1985-09-27 | 1987-04-04 | Hitachi Ltd | Dry etching apparatus |
JPH01227426A (en) * | 1988-03-08 | 1989-09-11 | Mitsui Toatsu Chem Inc | Film forming apparatus |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56135934A (en) * | 1980-03-27 | 1981-10-23 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Dry etching device |
-
1981
- 1981-03-02 JP JP2960381A patent/JPS57143827A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56135934A (en) * | 1980-03-27 | 1981-10-23 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Dry etching device |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5976427A (en) * | 1982-10-14 | 1984-05-01 | Fujitsu Ltd | Plasma processing apparatus |
JPH0416937B2 (en) * | 1982-10-14 | 1992-03-25 | Fujitsu Ltd | |
JPS6226821A (en) * | 1985-07-29 | 1987-02-04 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Rf sputter/etching apparatus |
JPH0528894B2 (en) * | 1985-07-29 | 1993-04-27 | Intaanashonaru Bijinesu Mashiinzu Corp | |
JPS6273719A (en) * | 1985-09-27 | 1987-04-04 | Hitachi Ltd | Dry etching apparatus |
JPH01227426A (en) * | 1988-03-08 | 1989-09-11 | Mitsui Toatsu Chem Inc | Film forming apparatus |
JP2602881B2 (en) * | 1988-03-08 | 1997-04-23 | 三井東圧化学株式会社 | Film forming equipment |
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