JPS5768033A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5768033A
JPS5768033A JP14362280A JP14362280A JPS5768033A JP S5768033 A JPS5768033 A JP S5768033A JP 14362280 A JP14362280 A JP 14362280A JP 14362280 A JP14362280 A JP 14362280A JP S5768033 A JPS5768033 A JP S5768033A
Authority
JP
Japan
Prior art keywords
film
substrate
oxidiation
approx
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14362280A
Other languages
Japanese (ja)
Other versions
JPH0133933B2 (en
Inventor
Akira Kurosawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14362280A priority Critical patent/JPS5768033A/en
Publication of JPS5768033A publication Critical patent/JPS5768033A/en
Publication of JPH0133933B2 publication Critical patent/JPH0133933B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To completely remove a damaged layer produced by ion etching by carrying out a reactive ion etching on the surface of a semiconductor substrate, and then oxidizing or wet etching at least more than 100Angstrom on the surface. CONSTITUTION:An SiO2 film 2 of approx. 100Angstrom thick and an Si3N4 film 3 of approx. 1,000Angstrom thick are laminated on an Si substrate 1, a resist mask 4 is covered on an element forming region, is etched with reactive ions to remove the expose film 3 and then the film 3, and the field region of the substrate is exposed. Then, the surface of the exposed region 5 is removed at least in the amount of more than 100Angstrom by wet etching with aqueous alkaline solution or low temperature oxidiation including steam under higher than 9 atms at lower than 700Angstrom , or anodic oxidiation, thereby removing the damaged layer, and a field oxidized film 6 is formed thereon. In this manner, the corner 3'' of the remaining film 3 almost becomes vertical, and the length of bird beak introduced between the films 2 and 3 at the end of the film 5 constructed therewith can be extremely reduced.
JP14362280A 1980-10-16 1980-10-16 Manufacture of semiconductor device Granted JPS5768033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14362280A JPS5768033A (en) 1980-10-16 1980-10-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14362280A JPS5768033A (en) 1980-10-16 1980-10-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5768033A true JPS5768033A (en) 1982-04-26
JPH0133933B2 JPH0133933B2 (en) 1989-07-17

Family

ID=15343027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14362280A Granted JPS5768033A (en) 1980-10-16 1980-10-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5768033A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110119A (en) * 1982-12-15 1984-06-26 Nec Corp Surface processing for semiconductor layer
JPS61270831A (en) * 1985-05-24 1986-12-01 Nec Corp Si surface processing method after removal of sio2 film by dry etching
JPS61281523A (en) * 1985-06-07 1986-12-11 Nippon Gakki Seizo Kk Formation of contact
JPS6294937A (en) * 1985-10-21 1987-05-01 Nec Corp Manufacture of semiconductor integrated circuit device
JPS62133760A (en) * 1985-12-02 1987-06-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Manufacture of bipolar transistor
JPS63224329A (en) * 1987-03-13 1988-09-19 Fuji Electric Co Ltd Manufacture of semiconductor element
JPH02148833A (en) * 1988-11-30 1990-06-07 Toshiba Corp Selective vapor growth method
JPH02295131A (en) * 1989-05-09 1990-12-06 Nec Corp Manufacture of mos transistor
US5065218A (en) * 1988-06-28 1991-11-12 Mitsubishi Denki Kabushiki Kaisha Locos type field isolating film and semiconductor memory device formed therewith

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124683A (en) * 1978-03-20 1979-09-27 Nippon Telegr & Teleph Corp <Ntt> Processing method of silicon wafer
JPS56123377A (en) * 1980-03-03 1981-09-28 Shunpei Yamazaki Plasma cleaning and etching method
JPS56129326A (en) * 1980-03-15 1981-10-09 Semiconductor Res Found Dry etching
JPS56144544A (en) * 1980-04-14 1981-11-10 Toshiba Corp Manufacture of semiconductor device
JPS5724540A (en) * 1980-07-19 1982-02-09 Nippon Telegr & Teleph Corp <Ntt> Rinsing of through hole in semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54124683A (en) * 1978-03-20 1979-09-27 Nippon Telegr & Teleph Corp <Ntt> Processing method of silicon wafer
JPS56123377A (en) * 1980-03-03 1981-09-28 Shunpei Yamazaki Plasma cleaning and etching method
JPS56129326A (en) * 1980-03-15 1981-10-09 Semiconductor Res Found Dry etching
JPS56144544A (en) * 1980-04-14 1981-11-10 Toshiba Corp Manufacture of semiconductor device
JPS5724540A (en) * 1980-07-19 1982-02-09 Nippon Telegr & Teleph Corp <Ntt> Rinsing of through hole in semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59110119A (en) * 1982-12-15 1984-06-26 Nec Corp Surface processing for semiconductor layer
JPS61270831A (en) * 1985-05-24 1986-12-01 Nec Corp Si surface processing method after removal of sio2 film by dry etching
JPS61281523A (en) * 1985-06-07 1986-12-11 Nippon Gakki Seizo Kk Formation of contact
JPS6294937A (en) * 1985-10-21 1987-05-01 Nec Corp Manufacture of semiconductor integrated circuit device
JPS62133760A (en) * 1985-12-02 1987-06-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Manufacture of bipolar transistor
JPS63224329A (en) * 1987-03-13 1988-09-19 Fuji Electric Co Ltd Manufacture of semiconductor element
US5065218A (en) * 1988-06-28 1991-11-12 Mitsubishi Denki Kabushiki Kaisha Locos type field isolating film and semiconductor memory device formed therewith
JPH02148833A (en) * 1988-11-30 1990-06-07 Toshiba Corp Selective vapor growth method
JPH02295131A (en) * 1989-05-09 1990-12-06 Nec Corp Manufacture of mos transistor

Also Published As

Publication number Publication date
JPH0133933B2 (en) 1989-07-17

Similar Documents

Publication Publication Date Title
JPS5768033A (en) Manufacture of semiconductor device
JPS5791535A (en) Manufacture of semiconductor device
JPS5487172A (en) Manufacture for simiconductor device
JPS57204165A (en) Manufacture of charge coupling element
JPS5685857A (en) Manufacture of semiconductor device
JPS57124440A (en) Compound etching method
JPS5648150A (en) Manufacture of semiconductor device
JPS56112741A (en) Manufacture of semiconductor device
JPS5595339A (en) Preparation of semiconductor device
JPS55165637A (en) Manufacture of semiconductor integrated circuit
KR0146629B1 (en) Method for forming field oxide film of semiconductor device
JPS55154750A (en) Manufacture of semiconductor device
JPS5529106A (en) Manufacturing of semiconductor device
JPS57211781A (en) Patterning method of double stacking thin film
JPS5683972A (en) Manufacture of semiconductor device
JPS5718327A (en) Production of semiconductor device
JPS6435917A (en) Manufacture of semiconductor device
JPS56133846A (en) Formation of element separating region in semiconductor integrated circuit
JPS56133844A (en) Semiconductor device
JPS57102045A (en) Manufacture of semiconductor device
JPS56160051A (en) Formation of insulating layer
JPS5518096A (en) Manufacture of semiconductor device
JPS57139927A (en) Manufacture of semiconductor integrated circuit
JPS6411325A (en) Semiconductor device and manufacture thereof
JPS5591977A (en) Dry etching method