JPS5591977A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS5591977A
JPS5591977A JP16581178A JP16581178A JPS5591977A JP S5591977 A JPS5591977 A JP S5591977A JP 16581178 A JP16581178 A JP 16581178A JP 16581178 A JP16581178 A JP 16581178A JP S5591977 A JPS5591977 A JP S5591977A
Authority
JP
Japan
Prior art keywords
film
etched
mask
patterned
reactive sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16581178A
Other languages
Japanese (ja)
Other versions
JPS5742154B2 (en
Inventor
Moritaka Nakamura
Chuichi Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16581178A priority Critical patent/JPS5591977A/en
Publication of JPS5591977A publication Critical patent/JPS5591977A/en
Publication of JPS5742154B2 publication Critical patent/JPS5742154B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent a stepped portion from cutting by forming an etching mask whose lateral sectional form is of overhang or the like on a substance to be etched and carrying out reactive sputtering to form a gently sloping edge pattern.
CONSTITUTION: On semiconductor substrate 4 Al film 5 is formed, phosphosilicate glass film 6 is grown, and photoresist film 7 is formed and patterned. Using patterned film 7 as a mask, film 6 is plasma-etched with a CF4 etchant, whereby film 6 is etched in an undercut state, and film 7 acts as a practically overhung mask to film 5. Film 5 is then subjected to reactive sputtering etching to obtain a pattern having tapered lateral sectional form.
COPYRIGHT: (C)1980,JPO&Japio
JP16581178A 1978-12-30 1978-12-30 Dry etching method Granted JPS5591977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16581178A JPS5591977A (en) 1978-12-30 1978-12-30 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16581178A JPS5591977A (en) 1978-12-30 1978-12-30 Dry etching method

Publications (2)

Publication Number Publication Date
JPS5591977A true JPS5591977A (en) 1980-07-11
JPS5742154B2 JPS5742154B2 (en) 1982-09-07

Family

ID=15819436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16581178A Granted JPS5591977A (en) 1978-12-30 1978-12-30 Dry etching method

Country Status (1)

Country Link
JP (1) JPS5591977A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205021038U (en) * 2015-07-08 2016-02-10 中兴通讯股份有限公司 Ejector sleeve device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine

Also Published As

Publication number Publication date
JPS5742154B2 (en) 1982-09-07

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