JPS5486968A - Washing - Google Patents

Washing

Info

Publication number
JPS5486968A
JPS5486968A JP15445877A JP15445877A JPS5486968A JP S5486968 A JPS5486968 A JP S5486968A JP 15445877 A JP15445877 A JP 15445877A JP 15445877 A JP15445877 A JP 15445877A JP S5486968 A JPS5486968 A JP S5486968A
Authority
JP
Japan
Prior art keywords
tube
gas
reaction
silicon
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15445877A
Other languages
Japanese (ja)
Inventor
Masayasu Tsunematsu
Hideo Meguro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15445877A priority Critical patent/JPS5486968A/en
Publication of JPS5486968A publication Critical patent/JPS5486968A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To cleanly wash an appliance or implement made of silicon or silicon compound without removing parts.
CONSTITUTION: Gas of fluoride such as CF, CF4, C3F3, etc. is caused to flow through a reaction tube 10. A high-frequency electric field is produced between electrodes 14, 16 by a power source 18. The gas in the tube 10 is excited by plasma to cause etching reaction. Harmful pollutants adhering to the inside surfaces of an outer tube 10A or an inner tube 10b or to the surface of a wafer holder 12 are removed by the etching in an ash making treatment and then conveyed out of the tube 10 by the gas.
COPYRIGHT: (C)1979,JPO&Japio
JP15445877A 1977-12-23 1977-12-23 Washing Pending JPS5486968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15445877A JPS5486968A (en) 1977-12-23 1977-12-23 Washing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15445877A JPS5486968A (en) 1977-12-23 1977-12-23 Washing

Publications (1)

Publication Number Publication Date
JPS5486968A true JPS5486968A (en) 1979-07-10

Family

ID=15584662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15445877A Pending JPS5486968A (en) 1977-12-23 1977-12-23 Washing

Country Status (1)

Country Link
JP (1) JPS5486968A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125840A (en) * 1980-03-07 1981-10-02 Fujitsu Ltd Cleaning method of dry etching device
JPS5821826A (en) * 1981-07-31 1983-02-08 Seiko Epson Corp Apparatus for manufacturing semiconductor
JPS6394635A (en) * 1986-10-09 1988-04-25 Furendotetsuku Kenkyusho:Kk Device for manufacturing semiconductor
JPS63156533A (en) * 1986-09-12 1988-06-29 ベンジン・テクノロジーズ・インコーポレーテツド Chamber-site washing method and device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125840A (en) * 1980-03-07 1981-10-02 Fujitsu Ltd Cleaning method of dry etching device
JPS5821826A (en) * 1981-07-31 1983-02-08 Seiko Epson Corp Apparatus for manufacturing semiconductor
JPS6359533B2 (en) * 1981-07-31 1988-11-21
JPS63156533A (en) * 1986-09-12 1988-06-29 ベンジン・テクノロジーズ・インコーポレーテツド Chamber-site washing method and device
JPS6394635A (en) * 1986-10-09 1988-04-25 Furendotetsuku Kenkyusho:Kk Device for manufacturing semiconductor

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