JPS5615044A - Plasma cleaning method - Google Patents

Plasma cleaning method

Info

Publication number
JPS5615044A
JPS5615044A JP9036579A JP9036579A JPS5615044A JP S5615044 A JPS5615044 A JP S5615044A JP 9036579 A JP9036579 A JP 9036579A JP 9036579 A JP9036579 A JP 9036579A JP S5615044 A JPS5615044 A JP S5615044A
Authority
JP
Japan
Prior art keywords
etching
plasma
high frequency
halogen element
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9036579A
Other languages
Japanese (ja)
Inventor
Yasuhiro Horiike
Masahiro Shibagaki
Takashi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9036579A priority Critical patent/JPS5615044A/en
Publication of JPS5615044A publication Critical patent/JPS5615044A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To enhance the etching reproducibility of the plasma cleaning method in a parallel flat plate type plasma etching apparatus applied with high frequency wave thereto by removing contaminants by employing the discharge of the same halogen element as gas containing halogen element used for the etching method. CONSTITUTION:When a halogen element is introduced into a vacuum container 1 and high frequency voltage is applied thereto, a glow discharge occurs thereat to produce a gas plasma 19. Adhesive is accumulated or adhered onto the inner wall of an insulating teflon 5 or the vacuum container 1 due to an after-glow out of the electrode. Then, chlorine gas plasma is generated by the high frequency voltage in the container 1 to evacuate the container 1 to conduct plasma cleaning therein. Then, it can remove and clean contaminants such as products formed upon discharge at the time of etching it.
JP9036579A 1979-07-18 1979-07-18 Plasma cleaning method Pending JPS5615044A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9036579A JPS5615044A (en) 1979-07-18 1979-07-18 Plasma cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9036579A JPS5615044A (en) 1979-07-18 1979-07-18 Plasma cleaning method

Publications (1)

Publication Number Publication Date
JPS5615044A true JPS5615044A (en) 1981-02-13

Family

ID=13996506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9036579A Pending JPS5615044A (en) 1979-07-18 1979-07-18 Plasma cleaning method

Country Status (1)

Country Link
JP (1) JPS5615044A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6348832A (en) * 1986-08-19 1988-03-01 Tokyo Electron Ltd Cleaning for chamber
JPS6376434A (en) * 1986-09-19 1988-04-06 Hitachi Ltd Plasma treatment equipment
JPS63156533A (en) * 1986-09-12 1988-06-29 ベンジン・テクノロジーズ・インコーポレーテツド Chamber-site washing method and device
JPH0316126A (en) * 1989-03-10 1991-01-24 Hitachi Ltd Method and apparatus for treatment of specimen
JPH0362520A (en) * 1989-07-31 1991-03-18 Hitachi Ltd Plasma cleaning process
US5705019A (en) * 1994-10-26 1998-01-06 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
US5868853A (en) * 1997-06-18 1999-02-09 Taiwan Semiconductor Manufacturing Co. Ltd. Integrated film etching/chamber cleaning process

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6348832A (en) * 1986-08-19 1988-03-01 Tokyo Electron Ltd Cleaning for chamber
JPH0588539B2 (en) * 1986-08-19 1993-12-22 Tokyo Electron Ltd
JPS63156533A (en) * 1986-09-12 1988-06-29 ベンジン・テクノロジーズ・インコーポレーテツド Chamber-site washing method and device
JPS6376434A (en) * 1986-09-19 1988-04-06 Hitachi Ltd Plasma treatment equipment
JPH0533816B2 (en) * 1986-09-19 1993-05-20 Hitachi Ltd
JPH0316126A (en) * 1989-03-10 1991-01-24 Hitachi Ltd Method and apparatus for treatment of specimen
JPH0362520A (en) * 1989-07-31 1991-03-18 Hitachi Ltd Plasma cleaning process
JP2892694B2 (en) * 1989-07-31 1999-05-17 株式会社日立製作所 Plasma cleaning method
US5705019A (en) * 1994-10-26 1998-01-06 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
US5868853A (en) * 1997-06-18 1999-02-09 Taiwan Semiconductor Manufacturing Co. Ltd. Integrated film etching/chamber cleaning process

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